RESUMO
Violet semipolar (20-2-1) InGaN microcavity light-emitting diodes (MC-LED) with a 200 nm ultra-short cavity length were demonstrated. The emission wavelength was 419 nm with a spectrum width of 20 nm. The external quantum efficiency (EQE) of MC-LED was constant at 0.8% for a forward current from 0.5 to 2 mA with the emitting area of 30×30 µm2. With increasing forward current, the peak wavelength and spectrum width of the emission showed almost no changes. For epitaxial growth, metal-organic chemical vapor deposition (MOCVD) was used. Substrate removal and tunnel-junction with an Ag-based electrode made possible the fabrication of the ultra-short 200 nm thick cavity MC-LED. This is more than a factor of 2 improvement compared to previous MC-LEDs of 450 nm cavity thickness sustaining 5 modes.
RESUMO
We successfully demonstrated an electrically injected blue(202¯1¯)semipolar vertical-cavity surface-emitting laser with a 5λ cavity length, an ion implanted aperture, and a dual dielectric DBR design. The peak power under pulsed operation was 1.85 mW, the threshold current was 4.6 kA/cm2 , and the differential efficiency was 2.4% for the mode at 445 nm of a device with a 12 µm aperture. Lasing was achieved up to a 50% duty cycle and the thermal impedance was estimated to be 1800 K/W. The lasing emission was found to be 100% plane polarized along the a-direction.
