Lithium-enriched graphite anode surfaces investigated using nuclear reaction analysis.

Non-destructive Li nuclear reaction analysis techniques were used to profile the Li distribution at the surface of graphitic Li-ion battery anodes. These techniques show that Li concentrations are elevated within 300 nm of the anode surface, even in fully delithiated states. The surface region, which includes the solid electrolyte interphase, contains at least 60% of the total Li irreversibly lost during formation and cycling.

Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond.

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10 ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

Efficient Extraction of Light from a Nitrogen-Vacancy Center in a Diamond Parabolic Reflector.

Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray scale lithography process, demonstrating a photon extraction efficiency of (41 ± 5)%. This device enables a raw experimental detection efficiency of (12 ± 1)% with fluorescence detection rates as high as (4.114 ± 0.003) × 106 counts per second (cps) from a single NV center. Enabled by our deterministic emitter localization and fabrication process, we find a high number of exceptional devices with an average count rate of (3.1 ± 0.9) × 106 cps.

Self-Balancing Position-Sensitive Detector (SBPSD).

Optical position-sensitive detectors (PSDs) are a non-contact method of tracking the location of a light spot. Silicon-based versions of such sensors are fabricated with standard CMOS technology, are inexpensive and provide a real-time, analog signal output corresponding to the position of the light spot. An innovative type of optical position sensor was developed using two back-to-back connected photodiodes. These so called self-balancing position-sensitive detectors (SBPSDs) eliminate the need for external readout circuitry entirely. Fabricated prototype devices demonstrate linear, symmetric coordinate characteristics and a spatial resolution of 200 µm for a 74 mm device. PSDs are commercially available only up to a length of 37 mm. Prototype devices were fabricated with various lengths up to 100 mm and can be scaled down to any size below that.

Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared.

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.

Helium-ion-induced radiation damage in LiNbO3 thin-film electro-optic modulators.

Helium-ion-induced radiation damage in a LiNbO3-thin-film (10 µm-thick) modulator is experimentally investigated. The results demonstrate a degradation of the device performance in the presence of He(+) irradiation at doses of ≥ 10(16) cm(-2). The experiments also show that the presence of the He(+) stopping region, which determines the degree of overlap between the ion-damaged region and the guided optical mode, plays a major role in determining the degree of degradation in modulation performance. Our measurements showed that the higher overlap can lead to an additional ~5.5 dB propagation loss. The irradiation-induced change of crystal-film anisotropy(n(o)-n(e))of ~36% was observed for the highest dose used in the experiments. The relevant device extinction ratio, V(π)L, and device insertion loss, as well the damage mechanisms of each of these parameters are also reported and discussed.

Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation.

Metal-semiconductor-metal Si waveguide photodetectors are demonstrated with responsivities of greater than 0.5 A/W at a wavelength of 1550 nm for a device length of 1mm. Sub-bandgap absorption in the Si waveguide is achieved by creating divacancy lattice defects via Si(+) ion implantation. The modal absorption coefficient of the ion-implanted Si waveguide is measured to be ≈ 185 dB/cm, resulting in a detector responsivity of ≈ 0.51 A/W at a 50 V bias. The frequency response of a typical 1mm-length detector is measured to be 2.6 GHz, with simulations showing that a frequency response of 9.8 GHz is achievable with an optimized contact configuration and bias voltage of 15 V. Due to the ease with which these devices can be fabricated, and their potential for high performance, these detectors are suitable for various applications in Si-based photonic integrated circuits.

Scalable fabrication of high purity diamond nanocrystals with long-spin-coherence nitrogen vacancy centers.

The combination of long spin coherence time and nanoscale size has made nitrogen vacancy (NV) centers in nanodiamonds the subject of much interest for quantum information and sensing applications. However, currently available high-pressure high-temperature (HPHT) nanodiamonds have a high concentration of paramagnetic impurities that limit their spin coherence time to the order of microseconds, less than 1% of that observed in bulk diamond. In this work, we use a porous metal mask and a reactive ion etching process to fabricate nanocrystals from high-purity chemical vapor deposition (CVD) diamond. We show that NV centers in these CVD nanodiamonds exhibit record-long spin coherence times in excess of 200 µs, enabling magnetic field sensitivities of 290 nT Hz(-1/2) with the spatial resolution characteristic of a 50 nm diameter probe.

Low-voltage planar-waveguide electrooptic prism scanner in Crystal-Ion-Sliced thin-film LiNbO3.

We report on the use of thin, i.e. 10 microm-thick, single-crystal LiNbO3, in low-voltage electrooptic prism scanners. These devices are fabricated by electric-field poling of a series of electrooptic prisms in a bulk crystal followed by high-energy ion implantation and subsequent etching of the poled samples. Such a single-crystal thin-film scanner, while having the same scanning functionality as with a bulk device, has an order-of-magnitude reduction in its required voltage; for example, a series of two prisms, of 2mm in total length, yields a deflection angle of 0.7 at 100V compared to more than 1.7kV for the same device in standard 200 microm-thick LiNbO3 wafers.

Egg of the Karner Blue butterfly (Lycaeides melissa samuelis): morphology and elemental analysis.

Most insect eggshells are ornately sculptured; that of the Karner Blue butterfly, Lycaeides melissa samuelis, exhibits a series of interwoven ridges and depressions. Scanning electron microscopic views of the shell show that the patterning resides in the outer chorion, while the inner vitelline membrane is relatively flat and featureless. We here describe the morphology of the egg and introduce a physical technique, use of a Dynamitron accelerator, to identify and localize elements in the eggshell. Most elements present are represented in the chorion, but sulfur appears restricted to the vitelline membrane. The micropyle is particularly rich in calcium and, in unhatched eggs, phosphorus as well.