Conservation of the lateral electron momentum at a metal-semiconductor interface studied by ballistic electron emission microscopy.

We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi/Si(100)-(2x1) and 0.68 eV for the Bi/Si(111)-(7x7). At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi/Si(111)-(7x7), while no increase occurs for Bi/Si(100)-(2x1). These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface.

Electronic transport on the nanoscale: ballistic transmission and Ohm's law.

If a current of electrons flows through a normal conductor (in contrast to a superconductor), it is impeded by local scattering at defects as well as phonon scattering. Both effects contribute to the voltage drop observed for a macroscopic complex system as described by Ohm's law. Although this concept is well established, it has not yet been measured around individual defects on the atomic scale. We have measured the voltage drop at a monatomic step in real space by restricting the current to a surface layer. For the Si(111)-( [see text]3 x [see text]3)-Ag surface a monotonous transition with a width below 1 nm was found. A numerical analysis of the data maps the current flow through the complex network and the interplay between defect-free terraces and monatomic steps.

Local potentiometry using a multiprobe scanning tunneling microscope.

Scanning tunneling potentiometry (STP) is a powerful tool to analyze the conductance through thin conducting layers with lateral resolution in the nanometer range. In this work, we show how a commercial ultrahigh vacuum multiprobe system, equipped with four independent tips, can be used to perform STP experiments. Two tips are gently pushed into the surface applying a lateral current through the layer of interest. Simultaneously, the topography and the potential distribution across the metal film are measured with a third tip. The signal-to-noise ratio of the potentiometry signal may be enhanced by using a fourth tip, providing a reference potential in close vicinity of the studied area. Two different examples are presented. For epitaxial (111) oriented Bi films, grown on a Si(100)-(2 x 1) surface, an almost constant gradient of the potential as well as potential drops at individual Bi-domain boundaries were observed. On the surface of the Si(111)(3 x 3)-Ag superstructure the potential variation at individual monoatomic steps could be precisely resolved.

Ballistic electron emission spectroscopy on Ag/Si devices.

In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7  × 7) or Si(100)-(2  × 1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1  × 1) and H:Si(100)-(2  × 1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.

Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy.

The well-known Au/n-Si(111) Schottky interface is modified by a discontinuous pentacene film (∼1.5 nm thick) and studied using spatially resolved ballistic electron emission spectroscopy (BEES). The pentacene film introduced subtle changes to the interface which cannot be definitively detected by current-voltage measurements or a standard BEES analysis of the barrier height. In contrast, analyzing the BEES results in a dual-parameter (transmission attenuation and barrier height) space allows the effect of the pentacene film on the Au/n-Si(111) interface to be clearly demonstrated. We found that the pentacene film behaves like a tunneling barrier and increases the distribution of local barrier heights with a tendency toward lower values. Our results highlight the potential of the dual-parameter BEES analysis for understanding local interface modification by molecules.

[Vulval tuberculosis: a rare case report]. / Tuberculose vulvaire: à propos d'un cas rare.

The authors report an observation of a rare case of vulvar tuberculosis in its hypertrophic form it is observed in a 16-years-old girl. The diagnosis was retained on a beam of arguments anamnestic, clinical, histological and evolutionary. A medical treatment based on antibacillar was founded supplemented of a surgical reduction for aesthetic concern.