Growth, characterization, and transport properties of ternary (Bi1-x Sb x )2Te3 topological insulator layers.

Ternary (Bi1-x Sb x )2Te3 films with an Sb content between 0 and 100% were deposited on a Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-x Sb x )2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

Crossover from Josephson effect to single interface Andreev reflection in asymmetric superconductor/nanowire junctions.

We report on the fabrication and characterization of symmetric nanowire-based Josephson junctions, that is, Al- and Nb-based junctions, and asymmetric junctions employing superconducting Al and Nb. In the symmetric junctions, a clear and pronounced Josephson supercurrent is observed. These samples also show clear signatures of subharmonic gap structures. At zero magnetic field, a Josephson coupling is found for the asymmetric Al/InAs-nanowire/Nb junctions as well. By applying a magnetic field above the critical field of Al or by raising the temperature above the critical temperature of Al the junction can be switched to an effective single-interface superconductor/nanowire structure. In this regime, a pronounced zero-bias conductance peak due to reflectionless tunneling has been observed.

Nanocrystalline Pd alloy films coated by electroless deposition.

The structures of palladium and palladium alloys thin films deposited from organic electrolytes onto metallic substrates by electroless plating method have been investigated. The coatings are dense, pore-free 0.005-1 microm thick films with high adhesive strength to the substrate surface. EDX, XRD, SEM and TEM methods were used to determine the composition and structure of alloy coatings of the following binary systems: Pd-Au, Pd-Ag, Pd-Ni, Pd-Pb, and ternary system Pd-Au-Ni. The coatings of Pd-Au, Pd-Ag and Pd-Ni have a solid solution structure, whereas Pd-Pb is intermetallic compound. It has been found that the deposited films consist of nanocrystalline grains with sizes in the range of 11-35 nm. Scanning and transmission electron microscopy investigations reveal the existence of clusters formed by nanocrystalline grains. The origin for the formation of nanocrystalline structures of coating films is discussed.