RESUMO
Given the specific properties of each carbon allotrope such as high electrical/thermal conductivity of multiwall carbon nanotubes (MWCNT) and extreme hardness and high inertness of nanocrystalline diamond (NCD), the integration of both carbon phases is highly desirable. Therefore, in the present work, buckypapers were produced from MWCNT suspensions and were used as free-standing substrates to be coated with NCD by microwave plasma chemical vapor deposition (MPCVD). The integration of both allotropes was successfully achieved, the CNTs being preserved after diamond growth as confirmed by µ-Raman spectroscopy and scanning electron microscopy (SEM). Additionally, a good linkage was observed, the CNTs remaining embedded within the NCD matrix, thus reinforcing the interface of the resulting hybrid structure. This was corroborated by bending tests in a modified nanohardness tester. The increase of the Young's modulus from 0.3 to 300 GPa after NCD growth enables the use of this material in a wide range of applications including microelectromechanical systems (MEMS). Additionally, a highly anisotropic electrical resistivity behavior was confirmed: low in-plane values were found for the CNT layer (1.39 × 10(-2) Ω.cm), while high transverse ones were measured for both the NCD coated and uncoated CNT buckypapers (8.13 × 10(5) and 6.18 × 10(2) Ω.cm, respectively).
RESUMO
Zinc oxide (ZnO) thin films were grown on uncoated and zinc-coated Corning glass substrates by pulsed-laser deposition (PLD). X-ray diffraction measurements revealed that the as-deposited films are polycrystalline having preferential orientation along the [0002] and [[Formula: see text]] directions. Transmittance spectroscopy verified that the as-deposited films are transparent with a direct bandgap of about 3.28 eV at room temperature. Piezoresponse imaging and local hysteresis loop acquisition were performed to characterize the piezoelectric and possible ferroelectric properties of the films. The out-of-plane (effective longitudinal, d(parellel)) and in-plane (effective shear, d(perpendicular)) coefficients were estimated from the local piezoresponse based on the comparison with LiNbO(3) single crystals. Measurements of all three components of piezoresponse (one longitudinal and two shear signals) allowed constructing piezoelectric maps for polycrystalline ZnO and to relate the variation of piezoelectric properties to the crystallographic and grain structure of the films. A shifted piezoresponse hysteresis loop under high voltages hints at the possible pseudoferroelectricity, as discussed recently by Tagantsev (2008 Appl. Phys. Lett. 93 202905).
RESUMO
Ferroelectric nanodomains were created in BaTiO(3) thin films by applying a voltage to a sharp conducting tip of a scanning force microscope (SFM). The films were epitaxially grown on SrRuO(3)-covered (001)-oriented SrTiO(3) substrates by a high-pressure sputtering. They appeared to be single-crystalline with the (001) crystallographic orientation relative to the substrate. Using the piezoresponse mode of the SFM to detect the out-of-plane film polarization, the domain sizes were measured as a function of the applied writing voltage and the pulse time. It was found that the time dependence of the domain diameter in a 60 nm thick BaTiO(3) film deviates significantly from the logarithmic law observed earlier in Pb(Zr(0.2)Ti(0.8))O(3) (PZT) films. At a given writing time, the domain size increases nonlinearly with increasing applied voltage, in contrast to the linear behavior reported earlier for PZT films and LiNbO(3) single crystals. The dynamics of domain growth is analyzed theoretically taking into account the strong inhomogeneity of the external electric field in the film and the influence of the bottom electrode. It is shown that the observed writing time and voltage dependences of the domain size can be explained by the domain-wall creep in the presence of random-bond disorder.