Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability.

Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide (SiOx) layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with SiOx, we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the SiOx layer is the most suitable as it has better values for current density-voltage output and quantum efficiency than the device without SiOx.

Fabrication and Characterization of a Flexible Thin-Film-Based Array of Microelectrodes for Corneal Electrical Stimulation.

The electric stimulation (ES) of the cornea is a novel therapeutic approach to the treatment of degenerative visual diseases. Currently, ES is delivered by placing a mono-element electrode on the surface of the cornea that uniformly stimulates the eye along the electrode site. It has been reported that a certain degree of correlation exists between the location of the stimulated retinal area and the position of the electrode. Therefore, in this study, we present the development of a sectioned surface electrode for selective electric stimulation of the human cornea. The proposed device consists of 16 independent microelectrodes, a reference electrode, and 18 contact pads. The microelectrodes have a size of 200 µm × 200 µm, are arranged in a 4 × 4 matrix, and cover a total stimulation area of 16 mm2. The proposed fabrication process, based on surface micromachining technology and flexible electronics, uses only three materials: polyimide, aluminum, and titanium, which allow us to obtain a simplified, ergonomic, and reproducible fabrication process. The fabricated prototype was validated to laboratory level by electrical and electrochemical tests, showing a relatively high electrical conductivity and average impedance from 712 kΩ to 1.4 MΩ at the clinically relevant frequency range (from 11 Hz to 30 Hz). Additionally, the biocompatibility of the electrode prototype was demonstrated by performing in vivo tests and by analyzing the polyimide films using Fourier transform infrared spectroscopy (FTIR). The resulting electrode prototype is robust, mechanically flexible, and biocompatible, with a high potential to be used for selective ES of the cornea.

MnPc Films Deposited by Ultrasonic Spray Pyrolysis at Low Temperatures: Optical, Morphological and Structural Properties.

In this work, we report how manganese phthalocyanine (MnPc) films obtained using the ultrasonic spray-pyrolysis technique at 40 °C deposited on glass substrate subjected to thermal annealing at 100 °C and 120 °C. The MnPc films were characterized using UV/Vis spectroscopy, Raman spectroscopy, X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). The absorption spectra of the MnPc films were studied in a wavelength range from 200 to 850 nm, where the characteristic bands of a metallic phthalocyanine known as B and Q bands were observed in this range of the spectrum. The optical energy band (Eg) was calculated using the Tauc equation. It was found that, for these MnPc films, the Eg has the values of 4.41, 4.46, and 3.58 eV corresponded to when they were deposited, annealing at 100 °C and 120 °C, respectively. The Raman spectra of the films showed the characteristic vibrational modes of the MnPc films. In the X-Ray diffractograms of these films, the characteristic diffraction peaks of a metallic phthalocyanine are observed, presenting a monoclinic phase. The SEM images of these films were studied in a cross-section obtaining thicknesses of 2 µm for the deposited film and 1.2 µm and 0.3 µm for the annealed films at 100 °C and 120 °C. Additionally, in the SEM images of these films, average particle sizes ranging from 4 to 0.041 µm were obtained. The results agree with those reported in the literature for MnPc films deposited by performing other techniques.

Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD.

In the present work, non-stoichiometric silicon oxide films (SiOx) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiOx films in areas such as optoelectronics. SiOx films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

Structural damage reduction in protected gold clusters by electron diffraction methods.

The present work explores electron diffraction methods for studying the structure of metallic clusters stabilized with thiol groups, which are susceptible to structural damage caused by electron beam irradiation. There is a compromise between the electron dose used and the size of the clusters since they have small interaction volume with electrons and as a consequence weak reflections in the diffraction patterns. The common approach of recording individual clusters using nanobeam diffraction has the problem of an increased current density. Dosage can be reduced with the use of a smaller condenser aperture and a higher condenser lens excitation, but even with those set ups collection times tend to be high. For that reason, the methods reported herein collects in a faster way diffraction patterns through the scanning across the clusters under nanobeam diffraction mode. In this way, we are able to collect a map of diffraction patterns, in areas with dispersed clusters, with short exposure times (milliseconds) using a high sensitive CMOS camera. When these maps are compared with their theoretical counterparts, oscillations of the clusters can be observed. The stability of the patterns acquired demonstrates that our methods provide a systematic and precise way to unveil the structure of atomic clusters without extensive detrimental damage of their crystallinity.

Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD.

In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS: 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh.