RESUMO
In this experimental work we present novel methods to increase the spatial resolution of valence electron energy loss spectrometry (VEELS) investigations below the limit given by the inelastic delocalization. For this purpose we analyse a layer stack consisting of silicon/silicon-oxide/silicon-nitride/silicon-oxide/silicon (SONOS) with varying layer thickness down to the 2nm level. Using a combination of a conical illumination and energy filtered transmission electron microscopy we are able to identify the layers by using low energy losses. Employing Bessel beams we demonstrate that VEELS can be performed in dark-field conditions while simultaneously the Bessel beam increases the spatial resolution of the elastic image due to less sensitivity to the spherical aberration of the condenser lens system. The dark-field conditions also guarantee that only electrons are collected that have neither undergone an energy loss being due to the CËerenkov effect, nor due to the excitation of transition radiation or light guiding modes. We consequently are able to measure the optical properties of a 2.5nm thin oxide being sandwiched by the silicon substrate and a silicon-nitride layer.
RESUMO
A new method to grow bulk quantities of single-walled carbon nanotubes (SWCNTs) by a catalytic chemical vapor deposition (CVD) process with the possibility of varying the pressure has been developed and is reported in this paper. Thermal decomposition of ferrocene provides both catalytic particles and carbon sources for SWCNT growth using Ar as a carrier gas. Upon an increase in the pressure, the mean diameter of the SWCNTs decreases. In fact, high abundances of SWCNT with diameters as small as 0.7 nm, which is the limit for stable caps with isolated pentagons, can be obtained. An additional advantage of this method is that as no external carbon sources are required, SWCNT synthesis can be achieved at temperatures as low as 650 degrees C.