HgBr2: an easily growing wide-spectrum birefringent crystal.

Birefringent materials are of great significance to the development of modern optical technology; however, research on halide birefringent crystals with a wide transparent range remains limited. In this work, mercuric bromide (HgBr2) has been investigated for the first time as a promising birefringent material with a wide transparent window spanning from ultraviolet (UV) to far-infrared (far-IR) spectral regions (0.34-22.9 µm). HgBr2 has an exceptionally large birefringence (Δn, 0.235 @ 546 nm), which is 19.6 times that of commercial MgF2. The ordered linear motif [Br-Hg-Br] with high polarizability anisotropy within the molecule is the inherent source of excellent birefringence, making it an efficient building block for birefringent materials. In addition, HgBr2 can be easily grown under mild conditions and remain stable in air for prolonged periods. Studying the birefringent properties of HgBr2 crystals would provide new ideas for future exploration of wide-spectrum birefringent materials.

Excellent Nonlinear Optical M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, Rb) Achieved by Unusual Cationic Substitution Strategy.

The typical chalcopyrite AgGaQ2 (Q = S, Se) are commercial infrared (IR) second-order nonlinear optical (NLO) materials; however, they suffer from unexpected laser-induced damage thresholds (LIDTs) primairy due to their narrow band gaps. Herein, what sets this apart from previously reported chemical substitutions is the utilization of an unusual cationic substitution strategy, represented by [[SZn4 ]S12 + [S4 Zn13 ]S24 + 11ZnS4 ⇒ MS12 + [M4 Cl]S24 + 11GaS4 ], in which the covalent Sx Zny units in the diamond-like sphalerite ZnS are synergistically replaced by cationic Mx Cly units, resulting in two novel salt-inclusion sulfides, M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, 1; Rb, 2). As expected, the introduction of mixed cations in the GaS4 anionic frameworks of 1 and 2 leads to wide band gaps (3.04 and 3.01 eV), which exceeds the value of AgGaS2 , facilitating the improvement of high LIDTs (9.4 and 10.3 × AgGaS2 @1.06 µm, respectively). Furthermore, compounds 1 and 2 exhibit moderate second-harmonic generation intensities (0.84 and 0.78 × AgGaS2 @2.9 µm, respectively), mainly originating from the orderly packing tetrahedral GaS4 units. Importantly, this study demonstrates the successful application of the cationic substitution strategy based on diamond-like structures to provide a feasible chemical design insight for constructing high-performance NLO materials.

Nonlinear Optical Phosphide CuInSi2P4: The Inaugural Member of Diamond-Like Family I-III-IV2-V4 Inspired by ZnGeP2.

Noncentrosymmetric phosphides have garnered significant attention as promising systems of infrared (IR) nonlinear optical (NLO) materials. Herein, a new quaternary diamond-like phosphide family I-III-IV2-V4 and its inaugural member, namely, CuInSi2P4 (CISP), were successfully fabricated by isovalent and aliovalent substitution based on ZnGeP2. First-principles calculations revealed that CISP has a large NLO coefficient (d14 = 110.8 pm/V), which can be attributed to the well-aligned tetrahedral [CuP4], [InP4], and [SiP4] units. Remarkably, the extremely small thermal expansion anisotropy (0.09) of CISP enables it to exhibit a considerable laser-induced damage threshold (LIDT, 5.0 × AgGaS2@1.06 µm) despite the relatively narrow band gap (0.81 eV). This work improves the chemical diversity of inorganic phosphide and promotes the development of phosphide systems, which may provide valuable perspectives for future exploration of IR NLO materials.

The first polyanion-substitution-driven centrosymmetric-to-noncentrosymmetric structural transformation realizing an excellent nonlinear optical supramolecule [Cd4P2][CdBr4].

Crystallographically, noncentrosymmetricity (NCS) is an essential precondition and foundation of achieving nonlinear optical (NLO), pyroelectric, ferroelectric, and piezoelectric materials. Herein, structurally, octahedral [SmCl6]3- is substituted by the acentric tetrahedral polyanion [CdBr4]2-, which is employed as a templating agent to induce centrosymmetric (CS)-to-NCS transformation based on the new CS supramolecule [Cd5P2][SmCl6]Cl (1), thereby providing the NCS supramolecule [Cd4P2][CdBr4] (2). Meanwhile, this replacement further results in the host 2D ∞2[Cd5P2]4+ layers converting to yield the twisted 3D ∞3[Cd4P2]2+ framework, which promotes the growth of bulk crystals. Additionally, phase 2 possesses well-balanced NLO properties, enabling considerable second-harmonic generation (SHG) responses (0.8-2.7 × AgGaS2) in broadband spectra, the thermal expansion anisotropy (2.30) together with suitable band gap (2.37 eV) primarily leading to the favorable laser-induced damage threshold (3.33 × AgGaS2), broad transparent window, and sufficient calculated birefringence (0.0433) for phase-matching ability. Furthermore, the first polyanion substitution of the supramolecule plays the role of templating agent to realize the CS-to-NCS transformation, which offers an effective method to rationally design promising NCS-based functional materials.

Cs4 Zn5 P6 S18 I2 : the Largest Birefringence in Chalcohalide Achieved by Highly Polarizable Nonlinear Optical Functional Motifs.

Chalcohalides not only keep the balance between the nonlinear optical (NLO) coefficient and wide band gap, but also provide a promising solution to achieve sufficient birefringence for phase-matching ability in NLO crystals. In this study, a novel chalcohalide, Cs4 Zn5 P6 S18 I2 (1) is successfully synthesized, by incorporating the highly electropositive Cs and the large electronegative I element into the zinc thiophosphate. Its 3D open framework features an edge-shared by distorted [ZnS4 ], ethanol-like [P2 S6 ], and unusual [ZnS2 I2 ] polyhedrons, which is inconsistent with the soft-hard-acids-bases theory. Remarkably, compound 1 simultaneously exhibits the large second-harmonic generation (SHG, 1.1×AgGaS2 , @1.3 µm) and a wide band gap (3.75 eV) toward a high laser-induced damage threshold (16.7×AgGaS2 , @1.06 µm), satisfying the rigorous requirements for a prominent infrared NLO material with concurrent SHG intensity (≥0.5×AGS) and band gap (≥3.5 eV). Moreover, to the best of the knowledge, the experimental result shows that phase 1 has the largest birefringence (0.108, @546 nm) in chalcohalide and meets phase-matching behavior demand originating from the polarizable anisotropy of NLO-functional motifs. This finding may provide great opportunities for designing birefringent chalcohalides.

Breaking the bottleneck of simultaneously wide band gap and large nonlinear optical coefficient by a "pore reconstruction" strategy in a salt-inclusion chalcogenide.

The template-based design of the crystal structure is a direct and highly efficient method to achieve optimal nonlinear optical (NLO, meaning second-order NLO) performances. The structural flexibility of porous salt-inclusion chalcogenides (SICs) provides an alternative platform for modulating the enlargement of the band gap (that is generally positive with laser-induced damage threshold) and second harmonic generation (SHG) response simultaneously. By applying the "pore reconstruction" strategy to SIC [K3Cl][Mn2Ga6S12] (1), a new derivative K3Rb3[K3Cl][Li2Mn4Ga12S27] (2) is successfully isolated, which unusually features a heterologous nanopore framework with inner diameters of 8.90 and 9.16 Å. Guided by such a strategy, compound 2 possesses the widest band gap (3.31 eV) among the magnetic NLO chalcogenides; this finding is dominantly attributed to the porous structure and the "dimensional deduction" effect. Moreover, phase 2 displays a remarkable phase-matchable SHG intensity (1.1 × AgGaS2 at the incident laser of 1910 nm) that originated from the oriented alignment of NLO-functional motifs, as well as the rich terminal S atoms in the nanopore structure. Furthermore, the "pore reconstruction" strategy offers an efficient pathway to explore potential NLO candidates with excellent comprehensive performances; in particular, it settles the conflicting issue of enhancing the band gap (>3.0 eV) and SHG intensity (>1.0 × AgGaS2) concurrently.

Nonlinear Optical Sulfides LiMGa8 S14 (M = Rb/Ba, Cs/Ba) Created by Li+ Driven 2D Centrosymmetric to 3D Noncentrosymmetric Transformation.

Cations that can regulate the configuration of anion group are greatly important but regularly unheeded. Herein, the structural transformation from 2D CS to 3D noncentrosymmetric (NCS, which is the prerequisite for second-order NLO effect) is rationally designed to newly afford two sulfides LiMGa8 S14 (M = Rb/Ba, 1; Cs/Ba, 2) by introducing the smallest alkali metal Li+ cation into the interlamination of 2D centrosymmetric (CS) RbGaS2 . The unusual frameworks of 1 and 2 are constructed from C2 -type [Ga4 S11 ] supertetrahedrons in a highly parallel arrangement. 1 and 2 display distinguished NLO performances, including strong phase-matchable second-harmonic generation (SHG) intensities (0.8 and 0.9 × AgGaS2 at 1910 nm), wide optical band gaps (3.24 and 3.32 eV), and low coefficient of thermal expansion for favorable laser-induced damage thresholds (LIDTs, 4.7, and 7.6 × AgGaS2 at 1064 nm), which fulfill the criteria of superior NLO candidates (SHG intensity >0.5 × AGS and band gap >3.0 eV). Remarkably, 1 and 2 melt congruently at 873.8 and 870.5 °C, respectively, which endows them with the potential of growing bulk crystals by the Bridgeman-Stockbarge method. This investigated system provides a new avenue for the structural evolution from layered CS to 3D NCS of NLO materials.

Open honeycomb frameworks of sulphides AHg4Ga5S12 (A = Rb, Cs) exhibiting infrared nonlinear optical properties.

A crystal structure with a diamond-like anionic framework belongs to a non-centrosymmetric macrostructure due to the aligned arrangement of tetrahedral units, meeting the premise of second-order nonlinear optical (NLO) materials. Herein, two new Hg-based sulphides, namely RbHg4Ga5S12 (1) and CsHg4Ga5S12 (2), which are isostructural and crystallise in the trigonal space group R3, are successfully isolated in sealed silica tubes by a solid-state reaction. The features of their three-dimensional open honeycomb frameworks are attributed to the parallel alignment of tetrahedral MS4 (M is disordered by 0.444 Hg and 0.555 Ga) building motifs, accompanied by Rb+ (or Cs+) reseating in the cavities. Notably, although the band gap values of 1 and 2 are 2.30 and 2.36 eV, separately, their thermal expansion anisotropies (0.15 and 0.41, respectively) are favourable for achieving laser-induced damage thresholds (5.6 and 5.8 times that of AgGaS2 for 1 and 2, respectively). In addition, the strong polarisability of tetrahedral MS4 building motifs in the diamond-like anionic structures is responsible for the promising second-harmonic generation (SHG) intensities (1.1 and 1.8 times that of AgGaS2 for 1 and 2, respectively) in the particle size range of 50-75 µm with non-phase-matchable behaviour at 1910 nm. Furthermore, theoretical investigation elaborates that electron transitions in compounds 1 and 2 mainly occur from valence band S-3p to conduction band Hg-6s and Ga-4s states, demonstrating that the linear and nonlinear optical properties originate primarily from the synergy of tetrahedral MS4 units.

[K2 PbX][Ga7 S12 ] (X = Cl, Br, I): The First Lead-Containing Cationic Moieties with Ultrahigh Second-Harmonic Generation and Band Gaps Exceeding the Criterion of 2.33 eV.

In contrast to anionic group theory of nonlinear optical (NLO) materials that second-harmonic generation (SHG) responses mainly originate from anionic groups, structural regulation on the cationic groups of salt-inclusion chalcogenides (SICs) is performed to make them also contribute to the NLO effects. Herein, the stereochemically active lone-electron-pair Pb2+ cation is first introduced to the cationic groups of NLO SICs, and the resultant [K2 PbX][Ga7 S12 ] (X = Cl, Br, I) are isolated via solid-state method. The features of their three-dimensional structures comprise highly oriented [Ga7 S12 ]3- and [K2 PbX]3+ frameworks derived from AgGaS2 , which display the largest phase-matching SHG intensities (2.5-2.7 × AgGaS2 @1800 nm) among all SICs. Concurrently, three compounds manifest band gap values of 2.54, 2.49, and 2.41 eV (exceeding the criterion of 2.33 eV), which can avoid two-photon absorption under the fundamental laser of 1064 nm, along with the relatively low anisotropy of thermal expansion coefficients, leading to improved laser-induced damage thresholds (LIDTs) values of 2.3, 3.8, and 4.0 times that of AgGaS2 . In addition, the density of states and SHG coefficient calculations demonstrate that the Pb2+ cations narrow the band gaps and benefit SHG responses.

Progressive macular ischemia in retinal vasculopathy with cerebral leukodystrophy.

PURPOSE: We present a case of retinal vasculopathy with cerebral leukodystrophy and review the usefulness of optical coherence tomography angiography (OCT-A) in the assessment of long-term outcomes. CASE DESCRIPTION: A 31-year-old woman developed sudden-onset scotoma in her right eye. Fundus examination and fluorescein angiography showed a patch of soft exudate and capillary nonperfusion in the posterior pole and outside the vascular arcades. OCT-A revealed that the initial vessel density (VD) of the superficial capillary plexus (SCP) and deep capillary plexus (DCP) of the right eye were 32% and 49.2%, respectively. Interestingly, over time, the VD of the SCP and DCP gradually decreased to 23.1% and 26.2%, respectively. In contrast, the initial VD of the SCP and DCP of the left eye were both stable at 44.3% and 56.2%, respectively, and only decreased slightly to 39.3% and 45.7%, respectively, over time. The average VD loss of the SCP and DCP, assessed over 1 year, was 8% and 13%, respectively, in the right eye, and 3% and 6%, respectively, in the left eye. CONCLUSION: Based on this case report, in which we demonstrated a long-term decline in VD of the macula in a young woman with mild retinal vasculopathy with cerebral leukodystrophy, we suggest that there is a potential and valuable role for OCT-A in this rare disease.

Crystal structure of AlFe0.95.

Three B2-type inter-metallic AlFe1 - δ phases (0.18 < δ < 0.05) in the Al-Fe binary system were synthesized by smelting and high temperature sinter-ing methods. The exact crystal structure for δ = 0.05 was refined by single-crystal X-ray diffraction. The amount of vacancy defects at the Fe atom sites was obtained by refining the corresponding site occupancy factor, converging to the chemical formula AlFe0.95, with a structure identical to that of ideal AlFe models inferred from powder X-ray or neutron diffraction patterns.

Photochromic Semiconductors: Bottom-Up Strategy to Construct Type II-Stacking Viologen π-Aggregates.

Semiconductor conductivities depend largely on the crystal structures and the associated electronic structures. If the electronic structures can be switched reversibly in the same crystal structure, then a drastic conductivity change may be controllable. The effect of electron transfer (ET) on semiconductor conductivity remained elusive so far. In this work, a series of two pillared inorganicorganic hybrid photochromic semiconductors (PSCs), [(CQ)Pb3X6(H2O)]·2H2O [X = Cl (1) and Br (2), CQ = N-4,4'-bipyridiniopropionate (viologen)], with II-stacking viologen π-aggregates, are constructed by a bottom-up self-assembly strategy through inorganic skeleton-directed intercalation and intermolecular noncovalent interaction. The conductivities are abnormally "invariant" after photoinduced ET, breaking the convention that the generation of radicals favors conductivity. The abnormally "invariant" conductivities are mainly derived from approximate electronic couplings before and after ET between II-stacking viologen π-aggregates.

AAg3Ga8Se14 (A = Rb, Cs): second-harmonic generation responses realized through the parallel arrangement of AgSe4 and GaSe4 tetrahedrons.

Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via solid-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group Cm (no. 8) and their three-dimensional [Ag3Ga8Se14]- anionic frameworks were comprised of AgSe4 and GaSe4 tetrahedrons. Their UV-Vis-near infrared diffuse reflectance spectra showed that 1 and 2 possessed wide band gaps of 2.17 and 2.10 eV, respectively. Notably, under incident laser irradiation at 1910 nm, compounds 1 and 2 presented moderate second-harmonic generation responses of 0.6 and 0.7 × AgGaS2, respectively, with phase-matching behaviours due to the parallel arrangement of nonlinear optical (NLO) functional tetrahedral AgSe4 and GaSe4 units. The laser-induced damage thresholds of 1 and 2 were estimated to be 25.4 and 18.0 MW cm-2, respectively, which were 2.1 and 1.5 times the threshold of AgGaS2. This study revealed that the title selenides, which were constructed from tetrahedral units arranged in a parallel array, are promising infrared NLO materials.

Sulfur-Doped Quintuple [9]Helicene with Azacorannulene as Core.

Herein, a hetero(S,N)-quintuple [9]helicene (SNQ9H) molecule with an azacorannulene core was synthesized, currently representing the highest hetero-helicene reported in the field of multiple [n]helicenes. X-ray crystallography indicated that SNQ9H includes not only a propeller-shaped conformer SNQ9H-1, but also an unforeseen quasi-propeller-shaped conformer SNQ9H-2. Different conformers were observed for the first time in multiple [n≥9]helicenes, likely owing to the doping of heteroatomic sulfurs in the helical skeletons. Remarkably, the ratio of SNQ9H-1 to SNQ9H-2 can be regulated in situ by the reaction temperature. Experimental studies on the photophysical and redox properties of SNQ9H and theoretical calculations clearly demonstrated that the electronic structures of SNQ9H depend on their molecular conformations. The strategy of introducing heteroatomic sulfurs into the helical skeleton may be useful in constructing various conformers of higher multiple [n]helicenes in the future.

Nitrogen-Embedded Quintuple [7]Helicene: A Helicene-Azacorannulene Hybrid with Strong Near-Infrared Fluorescence.

Herein, a nitrogen-embedded quintuple [7]helicene (N-Q7H) with an azapentabenzocorannulene core, which can be considered to be a helicene/azacorannulene hybrid π-system, was synthesized from azapentabenzocorannulene in a three-step process. N-Q7H is the first example of a multiple helicene with an azabuckybowl core. Single-crystal X-ray diffractometry unambiguously confirmed the structure of the propeller-shaped hybrid π-system. Owing to nitrogen-atom doping in the multiple helicenes and effective hybridization between the helicene and azacorannulene, N-Q7H exhibits considerably redshifted absorption and emission (yellow-to-green color change and green-to-near-infrared fluorescence change) relative to the azapentabenzocorannulene core. The broad absorption from the ultraviolet-visible to the NIR region is ascribable to the allowed transition between the highest occupied molecular orbital and the lowest unoccupied molecular orbital after symmetry breaking, as revealed by density functional theory calculations. Compared to previous propeller-shaped multiple helicenes with corannulene or hexabenzocoronene (etc.) as cores, N-Q7H demonstrates a significantly higher NIR fluorescence quantum efficiency of 28%. Additionally, the chiral-resolution and redox properties of N-Q7H were investigated. The excellent photophysical and inherent chiral properties of N-Q7H suggest that azapentabenzocorannulene can be used as an outstanding nitrogen-embedded core to construct novel multiple helicenes with wide application potential, including as NIR fluorescent bio-probes.

Synthesis and Fluorescent Properties of Multi-Functionalized C70 Derivatives of C70(OCH3)10[C(COOEt)2] and C70(OCH3)10[C(COOEt)2]2.

Due to the partially reduced π-conjugation of the fullerene cage, multi-functionalized fullerene derivatives exhibit remarkable fluorescent properties compared to pristine fullerenes, which have high potential for application in organic light-emitting diodes (OLEDs). In this study two multi-functionalized C70 derivatives, C70(OCH3)10[C(COOEt)2] and C70(OCH3)10[C(COOEt)2]2, with excellent fluorescence properties, were designed and synthesized. Compared with C70(OCH3)10 containing a single kind of functional group, both the C70(OCH3)10[C(COOEt)2] and C70(OCH3)10[C(COOEt)2]2 exhibited enhanced fluorescence properties with blue fluorescence emission. The fluorescence quantum yields of the C70(OCH3)10[C(COOEt)2] and C70(OCH3)10[C(COOEt)2]2 were 1.94% and 2.30%, respectively, which were about ten times higher than that of C70(OCH3)10. The theoretical calculations revealed that the multi-functionalization of the C70 increased the S1-T1 energy gap, reducing the intersystem crossing efficiency, resulting in the higher fluorescence quantum yield of the C70 derivatives. The results indicate that multi-functionalization is a viable strategy to improve the fluorescence of fullerene derivatives.

AIn4S6Cl (A = Rb and Cs) and Pb5Sn3Q10Cl2 (Q = S and Se): quaternary chalcohalides with mixed anionic coordination exhibit photocurrent responses.

Mixed-anionic compounds have caught considerable attention due to their flexible coordination manners and abundant physical properties. Four new chalcohalides RbIn4S6Cl (1), CsIn4S6Cl (2), Pb5Sn3S10Cl2 (3) and Pb5Sn3Se10Cl2 (4) were successfully obtained by the high-temperature halide salt flux method. Compounds 1 and 2 have layered structures that consist of octahedral InS6 and aliovalent-anionic InS3Cl units. Compounds 3 and 4 feature 3-D structural frameworks built by [Pb4SnQ8Cl4]6- and [PbSn2Q6]2- (Q = S and Se) polyhedral chains, in which partial Pb2+ cations are coordinated by Q2- and Cl- anions. Compounds 1-4 have optical band gaps close to the wavelength range of visible light and exhibit significant photocurrent responses of 28.75 nA cm-2, 55.12 nA cm-2, 19.58 mA cm-2, and 36.12 µA cm-2 with on/off ratios 30.0, 2.5, 15.7 and 2.6, respectively, implying their potential for photovoltaic applications. To the best of our knowledge, compound 3 has the largest photocurrent response among all non-oxides. In addition, the activation energies of 1-4 are well below 0.3 eV, which makes these compounds interesting for potential applications in electrochemical devices. This work sheds light on the exploration of promising photocurrent response materials in the mixed-anionic compound system.

Photocurrent, humidity sensitivity and proton conductivity properties of a new sulfide semiconductor CsCuS4.

Copper chalcogenides have drawn considerable attention due to their prominent semiconducting properties. A new Cu-containing semiconductor, namely, CsCuS4 (1), was obtained by a halide salt flux method. Its structure featured 1D infinite ∞1[CuS4] - chains, where the polysulfide anion S42- was relatively rare in Cu chalcogenides. The compound was multifunctional and exhibited significant photocurrent, humidity sensitivity, and proton conductivity properties. Specifically, it exhibits an "on" state photocurrent response of 0.95 µA cm-2 and an "off" state photocurrent response of 0.55 µA cm-2 with good reversibility. The humidity-sensitive resistance in dry air (10% RH) could reach up to six orders of magnitude higher than that in wet air (100% RH). Compound 1 showed an activation energy of 0.19 eV and may have potential electrochemical applications.

Value of metagenomic next-generation sequencing in children with severe infectious diseases. / å®åŸºå› ç»„äºŒä»£æµ‹åºåœ¨å„¿ç«¥é‡ç—‡æ„ŸæŸ“ä¸­çš„åº”ç”¨ä»·å€¼.

OBJECTIVES: To study the application value of metagenomic next-generation sequencing (mNGS) in children with severe infectious diseases. METHODS: An analysis was performed on the clinical data and laboratory test results of 29 children with severe infection who were admitted to the Second Affiliated Hospital of Wenzhou Medical University from June 2018 to December 2020. Conventional pathogen culture was performed for the 29 specimens (27 peripheral blood specimens and 2 pleural effusion specimens) from the 29 children, and mNGS pathogen detection was performed at the same time. RESULTS: Among the 29 children, 2 tested positive by conventional pathogen culture with 2 strains of pathogen, and the detection rate was 7% (2/29); however, 20 children tested positive by mNGS with 38 strains of pathogen, and the detection rate was 69% (20/29). The pathogen detection rate of mNGS was significantly higher than that of conventional pathogen culture (P<0.05), and mNGS could detect the viruses, fungi, and other special pathogens that conventional pathogen culture failed to detect, such as Orientia tsutsugamushi. The univariate analysis showed that gender, routine blood test results, C-reactive protein, procalcitonin, D-dimer, radiological findings, and whether antibiotics were used before admission did not affect the results of mNGS (P>0.05). CONCLUSIONS: Compared with conventional pathogen culture, mNGS is more sensitive for pathogen detection, with fewer interference factors. Therefore, it is a better pathogenic diagnosis method for severe infectious diseases in children.

Broad transparency and wide band gap achieved in a magnetic infrared nonlinear optical chalcogenide by suppressing d-d transitions.

Magnetic infrared (IR) nonlinear optical (NLO) materials, particularly those containing d-block metals, have attracted considerable attention due to the contributions of d-orbitals to large NLO efficiency. However, the d-d transitions from the d-block metals lead to strong optical absorption and narrow band gap, seriously hindering their practical applications. The structural flexibility of salt-inclusion systems provides a good opportunity for modulating the crystal field of magnetic ions to suppress the d-d transitions but allowing the NLO-active d-s and d-p transitions. These ideas afford a new salt-inclusion sulfide [K3Cl][Mn2Ga6S12], which features a rare nanoporous [MnGa3S6]- framework with tunnels of inner diameter of 9.0 Å and possesses a broad transparency (0.39-25.0 µm) and the widest band gap (3.17 eV) among all magnetic IR NLO chalcogenides. Remarkably, it exhibits a strong phase-matchable second-harmonic generation intensity (0.8 × AgGaS2 at 1910 nm and 3.1 × AgGaS2 at 1064 nm) and a high laser-induced damage threshold (12.5 × AgGaS2 at 1064 nm), achieving the important criteria of an advanced IR NLO material.