Bulk-surface coupling in dual topological insulator Bi1Te1and Sb-doped Bi1Te1single crystals via electron-phonon interaction.

Recently,Bi1Te1has been proved to be a dual topological insulator (TI), a new subclass of symmetry-protected topological phases, and predicted to be higher order topological insulator (HOTI). Being a dual TI (DTI), Bi1Te1is said to host quasi-1D surface states (SSs) due to weak TI phase and topological crystalline insulating SSs at the same time. On the other hand, HOTI supports topologically protected hinge states. So,Bi1Te1is a unique platform to study the electrical signature of topological SS (TSS) of fundamentally different origins. Though there is a report of magneto-transport measurements on large-scale Bi1Te1thin films, the Bi1Te1single crystal is not studied experimentally to date. Even the doping effect in a DTI Bi1Te1is missing in the literature. In this regard, we performed the perpendicular and parallel field magneto-transport measurement on the exfoliated microflake of Bi1Te1and Sb-doped Bi1Te1single crystals, grown by the modified Bridgmann method. Ourmetallicsample shows the weak anti-localization behavior analyzed by the multi-channel Hikami-Larkin-Nagaoka equation. We observed the presence of a pair of decoupled TSS. Further, we extracted the dephasing index (ß) from temperature (T)-dependence of phase coherence length (Lϕ), following the power law equation (Lϕ∝T-ß). The thickness-dependent value ofßindicates the transition in the dephasing mechanism from electron-electron to electron-phonon interaction with the increase in thickness, indicating the enhancement in the strength of bulk-surface coupling. Sb-doped system shows weakened bulk-surface coupling, hinted by the reduced dephasing indices.

van der Waals oxide heteroepitaxy for soft transparent electronics.

The quest for multifunctional, low-power and environment friendly electronics has brought research on materials to the forefront. For instance, as the emerging field of transparent flexible electronics is set to greatly impact our daily lives, more stringent requirements are being imposed on functional materials. Inherently flexible polymers and metal foil templates have yielded limited success due to their incompatible high-temperature growth and non-transparency, respectively. Although the epitaxial-transfer strategy has shown promising results, it suffers from tedious and complicated lift-off-transfer processes. The advent of graphene, in particular, and 2D layered materials, in general, with ultrathin scalability has revolutionized this field. Herein, we review the direct growth of epitaxial functional oxides on flexible transparent mica substrates via van der Waals heteroepitaxy, which mitigates misfit strain and substrate clamping for soft transparent electronics applications. Recent advances in practical applications of flexible and transparent electronic elements are discussed. Finally, several important directions, challenges and perspectives for commercialization are also outlined. We anticipate that this promising strategy to build transparent flexible optoelectronic devices and improve their performance will open up new avenues for researchers to explore.

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO3/Fe3O4 Heterostructure.

The ability to electrically write magnetic bits is highly desirable for future magnetic memories and spintronic devices, though fully deterministic, reversible, and nonvolatile switching of magnetic moments by electric field remains elusive despite extensive research. In this work, we develop a concept to electrically switch magnetization via polarization modulated oxygen vacancies, and we demonstrate the idea in a multiferroic epitaxial heterostructure of BaTiO3/Fe3O4 fabricated by pulsed laser deposition. The piezoelectricity and ferroelectricity of BaTiO3 have been confirmed by macro- and microscale measurements, for which Fe3O4 serves as the top electrode for switching the polarization. X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra indicate a mixture of Fe2+ and Fe3+ at O h sites and Fe3+ at T d sites in Fe3O4, while the room-temperature magnetic domains of Fe3O4 are revealed by microscopic magnetic force microscopy measurements. It is demonstrated that the magnetic domains of Fe3O4 can be switched by not only magnetic fields but also electric fields in a deterministic, reversible, and nonvolatile manner, wherein polarization reversal by electric field modulates the oxygen vacancy distribution in Fe3O4, and thus its magnetic state, making it attractive for electrically written magnetic memories.

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy.

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.

Flexible ferroelectric element based on van der Waals heteroepitaxy.

We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy.

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.

Oxide Heteroepitaxy for Flexible Optoelectronics.

The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

Tuning the magnetic properties of self-assembled BiFeO3-CoFe2O4 heteroepitaxy by magneto-structural coupling.

Magnetic and multiferroic nanocomposites with two distinct phases have been a topic of intense research for their profound potential applications in the field of spintronics. In addition to growing high-quality phase separated heteroepitaxial nanocomposites, the strain engineering that is conducive to enhance the tunability of material properties, in general, and the magnetic properties, in particular, is of utmost importance in exploring new possibilities. Here, we investigated the magneto-structural coupling between antiferromagnetic BiFeO3 (BFO) and ferrimagnetic CoFe2O4 (CFO) in self-assembled vertically aligned nanocomposites grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates. We found that BFO exhibits tetragonal (T) and rhombohedral (R) structures as the stable phases and CFO has high magnetocrystalline anisotropy even in the form of nanocomposites. The temperature and magnetic field dependent magnetizations of T_BFO-CFO/LAO and R_BFO-CFO/STO nanocomposites primarily demonstrate the magnetoelastic coupling between these variants.

Enhanced Structural and Magnetic Coupling in a Mesocrystal-Assisted Nanocomposite.

Benefiting from the advances made in well-controlled materials synthesis techniques, nanocomposites have drawn considerable attention due to their enthralling physics and functionalities. In this work, we report a new heteroepitaxial mesocrystal-perovskite nanocomposite, (NiFe2O4)0.33:(La0.67Ca0.33MnO3)0.67. Elaborate structural studies revealed that tiny NiFe2O4 nanocrystals aggregate into ordered octahedral mesocrystal arrays with {111} facets together with a concomitant structural phase transition of the La0.67Ca0.33MnO3 matrix upon postannealing process. Combined magnetic and X-ray absorption spectroscopic measurements show significant enhancement in the magnetic properties at room temperature due to the structural evolution of magnetic NiFe2O4 and the consequent magnetic coupling at the heterointerfaces mediating via well connected octahedrons of Mn-O6 in La0.67Ca0.33MnO3 and (Ni,Fe)-O6 in NiFe2O4. This work demonstrates an approach to manipulate the exciting physical properties of material systems by integrating desired functionalities of the constituents via synthesis of a self-assembled mesocrystal embedded nanocomposite system.

Origin of metallic behavior in NiCo2O4 ferrimagnet.

Predicting and understanding the cation distribution in spinels has been one of the most interesting problems in materials science. The present work investigates the effect of cation redistribution on the structural, electrical, optical and magnetic properties of mixed-valent inverse spinel NiCo2O4(NCO) thin films. It is observed that the films grown at low temperatures (T < 400 °C) exhibit metallic behavior while that grown at higher temperatures (T > 400 °C) are insulators with lower ferrimagnetic-paramagnetic phase transition temperature. So far, n-type Fe3O4 has been used as a conducting layer for the spinel thin films based devices and the search for a p-type counterpart still remains elusive. The inherent coexistence and coupling of ferrimagnetic order and the metallic nature in p-type NCO makes it a promising candidate for spintronic devices. Detailed X-ray Absorption and X-ray Magnetic Circular Dichroism studies revealed a strong correlation between the mixed-valent cation distribution and the resulting ferrimagnetic-metallic/insulating behavior. Our study clearly demonstrates that it is the concentration of Ni(3+)ions and the Ni(3+)-O(2-)Ni(2+) double exchange interaction that is crucial in dictating the metallic behavior in NCO ferrimagnet. The metal-insulator and the associated magnetic order-disorder transitions can be tuned by the degree of cation site disorder via growth conditions.