Effects of Mn, Zn Additions and Cooling Rate on Mechanical and Corrosion Properties of Al-4.6Mg Casting Alloys.

The mechanical properties of the Al-Mg alloy can be enhanced by adding metallic elements, but a continuous distribution of precipitates at grain boundaries leads to intergranular corrosion during sensitization treatment. In the present work, Mn, Zn additions, water cooling and furnace cooling were executed to investigate their effects on the mechanical and corrosion properties of the Al-4.6Mg alloy. Our results show that adding Mn to Al-4.6Mg alloys may produce grain refinement and dispersion strengthening, increasing tensile strength and hardness. The presence of Mn did not affect the corrosion resistance of Al-Mg alloys. Adding Zn to the Al-4.6Mg alloy increased tensile strength and hardness, but decreased corrosion resistance. Combined, the addition of Mn and Zn to the Al-4.6Mg alloy exhibited the highest tensile strength and hardness, but seriously reduced corrosion resistance. Furnace cooling substituted for water quenching could avoid intergranular corrosion, but slightly decreased the tensile strength and hardness by 7.0% and 6.8%, respectively.

The Effects of a Trace Amount of Manganese and the Homogenization on the Recrystallization of Al-7Mg-0.15Ti Alloys.

The aim of this study is to explore the effects of Manganese addition and homogenization treatment on the microstructures and mechanical properties of the Al-7Mg-0.15Ti (B535.0) alloy. The optical microscopy, electrical conductivity measurements, transmission electron microscopy, scanning electron microscopy (SEM + EBSD), as well as Rockwell hardness and tensile tests, were exploited for this purpose. The main objectives are to refine the grain size, inhibit grain growth in the annealed state, and enhance the mechanical strength of the alloy. The results show that the addition of manganese to the Al-7Mg-0.15Ti alloys refined the as-cast and recrystallized grains of the alloys. During the homogenization process, Al4Mn high-temperature stable dispersoids were precipitated in the aluminum matrix. After annealing, the Al4Mn particles blocked the movement of grain boundaries during the growth of the recrystallized grains and inhibited grain growth. Consequently, the annealed alloys showed grain refinement and dispersion strengthening. The Al4Mn dispersoids of the alloys with manganese added were smaller and denser after a two-stage homogenization process compared to those that underwent a one-stage homogenization process. By contrast, for the alloys without the addition of manganese, the recrystallized grains showed normal growth after annealing, and different homogenization processes had no significantly different effects.

Electrical and Physical Characteristics of WO3/Ag/WO3 Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology †.

In this work, three layers of transparent conductive films of WO3/Ag/WO3 (WAW) were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The thicknesses of WO3 (around 50~60 nm) and Ag (10~20 nm) films were mainly the changeable factors to achieve the optimal transparent conductivity attempting to replace the indium tin oxide (ITO) in cost consideration. The prepared films were cardinally subjected to physical and electrical characteristic analyses by means of X-ray diffraction analysis (XRD), field-emission scanning electron microscope (FE-SEM), and Keithley 4200 semiconductor parameter analyzer. The experimental results show as the thickness of the Ag layer increases from 10 nm to 20 nm, the resistance becomes smaller. While the thickness of the WO3 layer increases from 50 nm to 60 nm, its electrical resistance becomes larger.