Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology.

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

Tailored Height Gradients in Vertical Nanowire Arrays via Mechanical and Electronic Modulation of Metal-Assisted Chemical Etching.

In current top-down nanofabrication methodologies the design freedom is generally constrained to the two lateral dimensions, and is only limited by the resolution of the employed nanolithographic technique. However, nanostructure height, which relies on certain mask-dependent material deposition or etching techniques, is usually uniform, and on-chip variation of this parameter is difficult and generally limited to very simple patterns. Herein, a novel nanofabrication methodology is presented, which enables the generation of high aspect-ratio nanostructure arrays with height gradients in arbitrary directions by a single and fast etching process. Based on metal-assisted chemical etching using a catalytic gold layer perforated with nanoholes, it is demonstrated how nanostructure arrays with directional height gradients can be accurately tailored by: (i) the control of the mass transport through the nanohole array, (ii) the mechanical properties of the perforated metal layer, and (iii) the conductive coupling to the surrounding gold film to accelerate the local electrochemical etching process. The proposed technique, enabling 20-fold on-chip variation of nanostructure height in a spatial range of a few micrometers, offers a new tool for the creation of novel types of nano-assemblies and metamaterials with interesting technological applications in fields such as nanophotonics, nanophononics, microfluidics or biomechanics.

Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation.

We present the fabrication of silicon nanowire (SiNW) mechanical resonators by a resistless process based on focused ion beam local gallium implantation, selective silicon etching and diffusive boron doping. Suspended, doubly clamped SiNWs fabricated by this process presents a good electrical conductivity which enables the electrical read-out of the SiNW oscillation. During the fabrication process, gallium implantation induces the amorphization of silicon that, together with the incorporation of gallium into the irradiated volume, increases the electrical resistivity to values higher than 3 Ω m, resulting in an unacceptably high resistance for electrical transduction. We show that the conductivity of the SiNWs can be restored by performing a high temperature doping process, which allows us to recover the crystalline structure of the silicon and to achieve a controlled resistivity of the structures. Raman spectroscopy and TEM microscopy are used to characterize the recovery of crystallinity, while electrical measurements show a resistivity of 10(-4) Ω m. This resistivity allows to obtain excellent electromechanical transduction, which is employed to characterize the high frequency mechanical response by electrical methods.

On the electromechanical modelling of a resonating nano-cantilever-based transducer.

An electromechanical model for a transducer based on a lateral resonating cantilever is described. The on-plane vibrations of the cantilever are excited electrostatically by applying DC and AC voltages from a driver electrode placed closely parallel to the cantilever. The model predicts the static deflection and the frequency response of the oscillation amplitude for different voltage polarization conditions. For the electrostatic force calculation the model takes into account the real deflection shape of the cantilever and the contribution to the cantilever-driver capacitance of the fringing field. Both the static and dynamic predictions have been validated experimentally by measuring the deflection of the cantilever by means of an optical microscope.

Atomic force microscope characterization of a resonating nanocantilever.

An atomic force microscope (AFM) is used as a nanometer-scale resolution tool for the characterization of the electromechanical behaviour of a resonant cantilever-based mass sensor. The cantilever is actuated electrostatically by applying DC and AC voltages from a driver electrode placed closely parallel to the cantilever. In order to minimize the interaction between AFM probe and the resonating transducer cantilever, the AFM is operated in a dynamic non-contact mode, using oscillation amplitudes corresponding to a low force regime. The dependence of the static cantilever deflection on DC voltage and of the oscillation amplitude on the frequency of the AC voltage is measured by this technique and the results are fitted by a simple non-linear electromechanical model.

Characterization of antiresonant reflecting optical waveguide devices by scanning near-field optical microscopy.

Silicon-based antiresonant reflecting optical waveguide (ARROW) devices were studied by means of a scanning near-field optical microscope. Various structures such as a Y junction of a Mach-Zehnder interferometer and a directional optical coupler were characterized, showing the propagation of the light inside the devices simultaneously with the topography. Scattering on the splitting point of the Y junction was shown, as well as a partial coupling of the light between the two branches of the coupler. Measurements on the decay length of the evanescent field were also performed to study the use of the ARROW waveguide for sensor purposes.