Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD.

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal-insulator-metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies.

Microstructural analysis, magnetic properties, magnetocaloric effect, and critical behaviors of Ni0.6Cd0.2Cu0.2Fe2O4 ferrites prepared using the sol-gel method under different sintering temperatures.

This work focuses on the microstructural analysis, magnetic properties, magnetocaloric effect, and critical exponents of Ni0.6Cd0.2Cu0.2Fe2O4 ferrites. These samples, denoted as S1000 and S1200, were prepared using the sol-gel method and sintered separately at 1000 °C and 1200 °C, respectively. XRD patterns confirmed the formation of cubic spinel structures and the Rietveld method was used to estimate the different structural parameters. The higher sintering temperature led to an increased lattice constant (a), crystallite size (D), magnetization (M), Curie temperature (T C), and magnetic entropy change (-ΔS M) for samples that exhibited second-order ferromagnetic-paramagnetic (FM-PM) phase transitions. The magnetic entropy changed at an applied magnetic field (µ 0 H) of 5 T, reaching maximum values of about 1.57-2.12 J kg-1 K-1, corresponding to relative cooling powers (RCPs) of 115 and 125 J kg-1 for S1000 and S1200, respectively. Critical exponents (ß, γ, and δ) for samples around their T C values were studied by analyzing the M(µ 0 H, T) isothermal magnetizations using different techniques and checked by analyzing the -ΔS M vs. µ 0 H curves. The estimated values of ß and γ exponents (using the Kouvel-Fisher method) and δ exponent (from M(T C, µ 0 H) critical isotherms) were ß = 0.443 ± 0.003, γ = 1.032 ± 0.001, and δ = 3.311 ± 0.006 for S1000, and ß = 0.403 ± 0.008, γ = 1.073 ± 0.016, and δ = 3.650 ± 0.005 for S1200. Obviously, these critical exponents were affected by an increased sintering temperature and their values were different to those predicted by standard theoretical models.

Layered Ni(OH)2-Co(OH)2 films prepared by electrodeposition as charge storage electrodes for hybrid supercapacitors.

Consecutive layers of Ni(OH)2 and Co(OH)2 were electrodeposited on stainless steel current collectors for preparing charge storage electrodes of high specific capacity with potential application in hybrid supercapacitors. Different electrodes were prepared consisting on films of Ni(OH)2, Co(OH)2, Ni1/2Co1/2(OH)2 and layered films of Ni(OH)2 on Co(OH)2 and Co(OH)2 on Ni(OH)2 to highlight the advantages of the new architecture. The microscopy studies revealed the formation of nanosheets in the Co(OH)2 films and of particles agglomerates in the Ni(OH)2 films. Important morphological changes were observed in the double hydroxides films and layered films. Film growth by electrodeposition was governed by instantaneous nucleation mechanism. The new architecture composed of Ni(OH)2 on Co(OH)2 displayed a redox response characterized by the presence of two peaks in the cyclic voltammograms, arising from redox reactions of the metallic species present in the layered film. These electrodes revealed a specific capacity of 762 C g-1 at the specific current of 1 A g-1. The hybrid cell using Ni(OH)2 on Co(OH)2 as positive electrode and carbon nanofoam paper as negative electrode display specific energies of 101.3 W h g-1 and 37.8 W h g-1 at specific powers of 0.2 W g-1 and 2.45 W g-1, respectively.

Hybrid nickel manganese oxide nanosheet-3D metallic dendrite percolation network electrodes for high-rate electrochemical energy storage.

This work reports the fabrication, by electrodeposition and post-thermal annealing, of hybrid electrodes for high rate electrochemical energy storage composed of nickel manganese oxide (Ni0.86Mn0.14O) nanosheets over 3D open porous dendritic NiCu foams. The hybrid electrodes are made of two different percolation networks of nanosheets and dendrites, and exhibit a specific capacitance value of 848 F g(-1) at 1 A g(-1). The electrochemical tests revealed that the electrodes display an excellent rate capability, characterized by capacitance retention of approximately 83% when the applied current density increases from 1 A g(-1) to 20 A g(-1). The electrodes also evidenced high charge-discharge cycling stability, which attained 103% after 1000 cycles.

Raman spectroscopy and X-ray diffraction studies of stress effects in PbTiO3 thin films.

A systematic study of domain structure and residual stress evolution with film thickness and of phase transition in c/a epitaxial PbTiO(3)/LaAlO(3) films using X-ray diffraction and Raman spectroscopy is reported. Both techniques revealed that the films are under tensile residual stress in the film plane and that a-domains are more stressed than c-domains. The two components of the large A(1)(TO) Ramanmodes are associated with a- and c-domains and their intensity ratio correlates to the volume fraction of a-domains. The evolution of the Raman signature with temperature revealed that the spectrum of a-domains disappears around 480 degrees C, whereas c-domains present an anomaly in their spectrum at 500 degrees C but maintain a well-defined Raman signature up to 600 degrees C.