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1.
Opt Lett ; 42(19): 3816-3819, 2017 Oct 01.
Artigo em Inglês | MEDLINE | ID: mdl-28957136

RESUMO

We report the fabrication of periodic structures with a critical dimension of 90 nm on a fused silica substrate by i-line (λ=365 nm) proximity mask-aligner lithography. This realization results from the combination of the improvements of the optical system in the mask aligner (known as MO exposure optics), short-period phase-mask optimization, and the implementation of self-aligned double patterning (SADP). A 350 nm period grating is transferred into a sacrificial polymer layer and coated with an aluminum layer. The removal of the metal initially present on the horizontal surfaces and on top of the polymer grating leaves a 175 nm period grating on the wafer, which can be used as a wire grid polarizer. A computation of the efficiency is performed from the measured profile and confirms the deep-blue visible to infra-red operation range.

2.
Opt Express ; 23(13): 16628-37, 2015 Jun 29.
Artigo em Inglês | MEDLINE | ID: mdl-26191675

RESUMO

Diffractive mask-aligner lithography allows printing structures that have a sub-micrometer resolution by using non-contact mode. For such a purpose, masks are often designed to operate with monochromatic linearly polarized light, which is obtained by placing a spectral filter and a polarizer in the beam path. We propose here a mask design that includes a wire-grid polarizer (WGP) on the top side of a photo-mask and a diffractive element on the bottom one to print a 350 nm period grating by using a classical mask-aligner in proximity exposure mode. Linearly polarizing locally an unpolarized incident beam is only possible by using a WGP on the top side of the mask. This configuration opens the possibility to use different linear polarization orientation on a single mask and allows to print high resolution structures with different orientation within one exposure.

3.
Opt Lett ; 39(6): 1665-8, 2014 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-24690864

RESUMO

This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.

4.
Opt Lett ; 37(22): 4651-3, 2012 Nov 15.
Artigo em Inglês | MEDLINE | ID: mdl-23164868

RESUMO

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.


Assuntos
1-Propanol/química , Nanotecnologia/métodos , Óxidos/química , Impressão/métodos , Raios Ultravioleta , Zircônio/química , Interferometria
5.
Opt Express ; 18(10): 10557-66, 2010 May 10.
Artigo em Inglês | MEDLINE | ID: mdl-20588908

RESUMO

The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.


Assuntos
Nanotecnologia/instrumentação , Fotografação/instrumentação , Refratometria/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento
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