Light-sensitive monolayer-thick nanocrystal skins of face-down self-oriented colloidal quantum wells.

Colloidal quantum wells (CQWs), a quasi-two-dimensional, atomically-flat sub-family of semiconductor nanocrystals, are well suited to produce excellent devices for photosensing applications thanks to their extraordinarily large absorption cross-sections. In this work, we propose and demonstrate a new class of light-sensitive nanocrystal skins (LS-NS) that employ a monolayer of face-down orientation-controlled self-assembled CQWs as the active absorbing layer in the UV-visible range. This CQW LS-NS platform enables non-conventional photosensing operation that relies on the strong optical absorption of the monolayered assembly of CQWs and the subsequent photogenerated potential build-up across the device, allowing for self-powered operation. Here such self-oriented CQWs reduce the surface roughness in their monolayer-thick film, essential to high device performance. Owing to their ease of fabrication and low cost, these devices hold great promise for large-scale use in semi-transparent photosensing surfaces.

Vertically oriented self-assembly of colloidal CdSe/CdZnS quantum wells controlled via hydrophilicity/lipophilicity balance: optical gain of quantum well stacks for amplified spontaneous emission and random lasing.

We propose and demonstrate vertically oriented self-assembly of colloidal quantum wells (CQWs) that allows for stacking CdSe/CdZnS core/shell CQWs in films for the purposes of amplified spontaneous emission (ASE) and random lasing. Here, a monolayer of such CQW stacks is obtained via liquid-air interface self-assembly (LAISA) in a binary subphase by controlling the hydrophilicity/lipophilicity balance (HLB), a critical factor for maintaining the orientation of CQWs during their self-assembly. Ethylene glycol, as a hydrophilic subphase, orients the coalition of these CQWs into self-assembled multi-layers in the vertical direction. Stacking CQWs into large micron-sized areas as a monolayer is facilitated by adjusting HLB with diethylene glycol addition as a more lyophilic subphase during LAISA. ASE was observed from the resulting multi-layered CQW stacks prepared via sequential deposition onto the substrate by applying the Langmuir-Schaefer transfer method. Random lasing was achieved from a single self-assembled monolayer of the vertically oriented CQWs. Here, highly rough surfaces resulting from the non-close packing nature of the CQW stack films cause strongly thickness-dependent behavior. We observed that in general a higher roughness-to-thickness ratio of the CQW stack films (e.g., thinner films that are intrinsically rough enough) leads to random lasing, while it is possible to observe ASE only in thick enough films even if their roughness is relatively higher. These findings indicate that the proposed bottom-up technique can be used to construct thickness-tunable, three-dimensional CQW superstructures for fast, low-cost, and large-area fabrication.

On the Rational Design of Core/(Multi)-Crown Type-II Heteronanoplatelets.

Solution-processed two-dimensional nanoplatelets (NPLs) allowing lateral growth of a shell (crown) by not affecting the pure confinement in the vertical direction provide unprecedented opportunities for designing heterostructures for light-emitting and -harvesting applications. Here, we present a pathway for designing and synthesizing colloidal type-II core/(multi-)crown hetero-NPLs and investigate their optical properties. Stoke's shifted broad photoluminescence (PL) emission and long PL lifetime (∼few 100 ns) together with our wavefunction calculations confirm the type-II electronic structure in the synthesized CdS/CdSe1-xTex core/crown hetero-NPLs. In addition, we experimentally obtained the band-offsets between CdS, CdTe, and CdSe in these NPLs. These results helped us designing hetero-NPLs with near-unity PL quantum yield in the CdSe/CdSe1-xTex/CdSe/CdS core/multicrown architecture. These core/multicrown hetero-NPLs have two type-II interfaces unlike traditional type-II NPLs having only one and possess a CdS ending layer for passivation and efficient suppression of stacking required for optoelectronic applications. The light-emitting diode (LED) obtained using multicrown hetero-NPLs exhibits a maximum luminance of 36,612 cd/m2 and external quantum efficiency of 9.3%, which outcompetes the previous best results from type-II NPL-based LEDs. These findings may enable designs of future advanced heterostructures of NPLs which are anticipated to show desirable results, especially for LED and lasing platforms.

Highly-Directional, Highly-Efficient Solution-Processed Light-Emitting Diodes of All-Face-Down Oriented Colloidal Quantum Well Self-Assembly.

Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) of a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. This SAM-CQW-LED architecture allows for a high maximum brightness of 19,800 cd m-2 with a long operational lifetime of 247 h at 100 cd m-2 as well as a stable saturated deep-red emission (651 nm) with a low turn-on voltage of 1.7 eV at a current density of 1 mA cm-2 and a high J90 of 99.58 mA cm-2 . These findings indicate the effectiveness of oriented self-assembly of CQWs as an electrically-driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW-LEDs.