RESUMO
We report the fabrication of long-period optical fiber gratings by use of a refractive-index increase induced by ion implantation. Helium ions were implanted in an optical fiber core through a metal mask that had a 170-microm -pitch grating with spacing of 60 microm . We obtained a wavelength-dependent effective transmission loss by use of the grating.
RESUMO
The refractive indices of planar silver-ion-exchanged waveguides have been modified by UV excimer laser irradiation (lambda=193 nm) . The effective index changes of the fundamental modes of the waveguides after exposition are as large as 2x10(-2) . The procedure permits the fabrication of integrated optical components in a direct way, with neither the use of standard lithography nor previous sensitizing of the substrate. Optical characterization of the irradiated samples is presented. By the use of appropriate masks, we have fabricated planar Bragg gratings.
RESUMO
The optical absorption spectrum and the 400-nm photoluminescence (PL) of a 1.4-mol. % Ge photosensitive optical fiber preform subjected to high fluence of 193-nm ArF and 248-nm KrF excimer-laser irradiation are measured. The largest absorption increases occur near 200 nm in both cases, but a small net bleaching of absorption is obtained near the laser wavelength for KrF irradiations. The blue PL decreases during ArF exposure but increases with the KrF laser. In similarly excited 9-mol. % Ge fiber preforms the blue PL always decreases. A study of the PL intensity as a function of irradiating laser light intensity shows no evidence of multiple photon absorption effects.
RESUMO
The changes in refractive index, optical absorption, and volume of synthetic fused silica resulting from the implantation of germanium and silicon ions at energies of 3 and 5 MeV are reported. Implantation changes the density and generates ultraviolet color centers in the silica, which increases the refractive index at visible wavelengths by ~1%. Irradiation of the implanted samples with 249-nm light from a KrF excimer laser photobleaches the color centers and reduces the index by more than 0.1%. Photobleaching is used to write a 4.3-microm pitch diffraction grating in the implanted silica.