1.
Nanotechnology
; 20(47): 475604, 2009 Nov 25.
Artigo
em Inglês
| MEDLINE
| ID: mdl-19875877
RESUMO
An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.
2.
Phys Rev B Condens Matter
; 52(16): 11898-11903, 1995 Oct 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9980327
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