Crystal-Structure Control of Molecular Semiconductors by Methylthiolation: Toward Ultrahigh Mobility.

ConspectusThe crystal structure of organic semiconductors has been regarded as one of the crucial factors for realizing high-performance electronic devices, such as organic field-effect transistors. However, although the control of crystal structures of organic semiconductors has been examined in the last two decades of intensive efforts of the development of organic semiconductors, active measures to control crystal structures enabling high carrier mobility are still limited. In 2016, our research group noticed that regioselective methylthiolation could provide a selective crystal structure change from an ordinary herringbone structure to a pitched π-stacking structure, similar to the crystal structure of rubrene, in the benzo[1,2-b:4,5-b']dithiophene (BDT) system. Following this serendipitous finding, our group systematically investigated the relationship between the molecular and crystal structures of a range of methylthiolated aromatic and heteroaromatic compounds.This Account provides a comprehensive overview of our research efforts and advancements in the development of methylthiolated small-molecule-based organic semiconductors (molecular semiconductors). We first describe the outline of the past development of molecular semiconductors, focusing on the types of crystal structures of high-performance molecular semiconductors. Then, we describe our findings on the drastic crystal structure change in the BDT system upon methylthiolation, detailing the causes of the change in terms of the intermolecular contacts and intermolecular interaction energies. This is followed by the confirmation of the generality of the crystal-structure change by methylthiolation of a series of acene and heteroacenes, where the herringbone structure in the parent system is unexceptionally transformed into the pitched π-stacking structure, a promising crystal structure for high-mobility molecular semiconductors well exemplified by the prototypical molecular semiconductor, rubrene. In fact, the methylthiolated anthradithiophene afforded comparable high mobility to rubrene in single-crystal field-effect transistors. Then, we demonstrate that the sandwich herringbone structures of peri-condensed polycyclic aromatic hydrocarbons, including pyrene, perylene, and peropyrene, change into brickwork crystal structures upon methylthiolation and that, among these compounds, very promising molecular semiconductors, methylthiolated pyrene and peropyrene, showing ultrahigh mobility of 30 cm2 V s-1, are realized.Through the studies, by gaining insights into the underlying mechanisms driving the crystal structure changes, we lay a strong foundation for tackling challenges related to controlling the crystal structures and developing high-performance molecular semiconductors. This will be a distinct approach from the past activities in the development of molecular semiconductors that mainly focused on molecules themselves, including their synthesis, properties, and characterization. We thus anticipate that our findings and the present Account will open the door to a new era of the development of molecular semiconductors.

Synthesis of 3,3'-dihydroxy-2,2'-diindan-1,1'-dione derivatives for tautomeric organic semiconductors exhibiting intramolecular double proton transfer.

To investigate potential applications of the 3,3'-dihydroxy-2,2'-biindan-1,1'-dione (BIT) structure as an organic semiconductor with intramolecular hydrogen bonds, a new synthetic route under mild conditions is developed based on the addition reaction of 1,3-dione to ninhydrin and the subsequent hydrogenation of the hydroxyl group. This route affords several new BIT derivatives, including asymmetrically substituted structures that are difficult to access by conventional high-temperature synthesis. The BIT derivatives exhibit rapid tautomerization by intramolecular double proton transfer in solution. The tautomerizations are also observed in the solid state by variable temperature measurements of X-ray diffractometry and magic angle spinning 13C solid-state NMR. Possible interplay between the double proton transfer and the charge transport is suggested by quantum chemical calculations. The monoalkylated BIT derivative with a lamellar packing structure suitable for lateral charge transport in films shows a hole mobility of up to 0.012 cm2 V-1 s-1 with a weak temperature dependence in an organic field effect transistor.

Crystal-structure simulation of molecular semiconductors: brickwork-related crystal structures of methylthiolated peri-condensed polycyclic aromatic hydrocarbons.

Despite the critical importance to carrier transport properties, studies on the control and prediction of crystal structures of molecular semiconductors have not been well-matured. To tackle this issue, we have developed "in silico crystallization" (ISC) protocols for simulating the brickwork (BW) crystal structures of methylchalcogenolated polycyclic aromatic hydrocarbons (PAHs). In this study, by carefully analyzing a BW-related polymorph of experimental crystal structures, an inclined brickwork (iBW) structure, we further extend the ISC protocol to simulate various BW-related crystal structures including iBW structures. Rational conditional branching in the simulation not only makes it possible to simulate eight polymorph candidates of methylchalcogenolated PAHs but also helps understand the relationship between the polymorphs. Furthermore, the relative favorability of each polymorphic candidate, i.e., the likelihood of the appearance among the polymorph candidates, can also be evaluated.

Crystal-Structure Simulation of Methylthiolated Peri-Condensed Polycyclic Aromatic Hydrocarbons for Identifying Promising Molecular Semiconductors: Discovery of 1,3,8,10-tetrakis(methylthio)peropyrene Showing Ultrahigh Mobility.

The crystal structures of molecular semiconductors critically affect their carrier-transport properties. One of the promising crystal structures that afford high carrier mobility is a brickwork structure recently reported for 1,3,6,8-tetrakis(methylthio)pyrene (MT-pyrene) showing ultrahigh mobility. However, such ultrahigh mobility is not realized in other methylchalocogenolated pyrenes, owing to subtle differences in the molecular positions in their crystal structures. This means that, for developing superior molecular semiconductors, it is desirable to simulate the crystal structure with sufficient quality before time-consuming and labor-intensive synthetic trials. To realize this, a new computational approach is developed to simulate crystal structures of all methylchalocogenolated pyrenes, which is then applied to MT-pyrene-related methylthiolated peri-condensed polycyclic aromatic hydrocarbons including perylene, peropyrene, and terrylene derivatives. Among these, 1,3,8,10-tetrakis(methylthio)peropyrene (MT-peropyrene) is expected to show high mobility based on the simulated crystal structures. Thus, MT-peropyrene is chosen as the synthetic target, and a new peropyrene synthesis method is developed. Thus synthesized MT-peropyrene has virtually the same crystal structure as the simulated one, and its single-crystal field-effect transistors show mobility as high as 30 cm2 V-1 s-1 and band-like transport behaviors. These results indicate that the present crystal-structure simulation is a powerful tool for exploring promising molecular semiconductors.

"Manipulation" of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene-Based Molecular Semiconductor.

Control and prediction of crystal structures of molecular semiconductors are considered challenging, yet they are crucial for rational design of superior molecular semiconductors. It is here reported that through methylthiolation, one can rationally control the crystal structure of pyrene derivatives as molecular semiconductors; 1,6-bis(methylthio)pyrene keeps a similar sandwich herringbone structure to that of parent pyrene, whereas 1,3,6,8-tetrakis(methylthio)pyrene (MT-pyrene) takes a new type of brickwork structure. Such changes in these crystal structures are explained by the alteration of intermolecular interactions that are efficiently controlled by methylthiolation. Single crystals of MT-pyrene are evaluated as the active semiconducting material in single-crystal field-effect transistors (SC-FETs), which show extremely high mobility (32 cm2 V-1 s-1 on average) operating at the drain and gate voltages of -5 V. Moreover, the band-like transport and very low trap density are experimentally confirmed for the MT-pyrene SC-FETs, testifying that the MT-pyrene is among the best molecular semiconductors for the SC-FET devices.

Spatially Uniform Thin-Film Formation of Polymeric Organic Semiconductors on Lyophobic Gate Insulator Surfaces by Self-Assisted Flow-Coating.

Surface hydrophobization by self-assembled monolayer formation is a powerful technique for improving the performance of organic field-effect transistors (OFETs). However, organic thin-film formation on such a surface by solution processing often fails due to the repellent property of the surface against common organic solvents. Here, a scalable unidirectional coating technique that can solve this problem, named self-assisted flow-coating, is reported. Producing a specially designed lyophobic-lyophilic pattern on the lyophobic surface enables organic thin-film formation in the lyophobic surface areas by flow-coating. To demonstrate the usefulness of this technique, OFET arrays with an active layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) are fabricated. The ideal transfer curves without hysteresis behavior are obtained for all OFETs. The average field-effect hole mobility in the saturation regime is 0.273 and 0.221 cm2·V-1·s-1 for the OFETs with the channels parallel and perpendicular to the flow-coating direction, respectively, and the device-to-device variation is less than 3% for each OFET set. Very small device-to-device variation is also obtained for the on-state current, threshold voltage, and subthreshold swing. These results indicate that the self-assisted flow-coating is a promising coating technique to form spatially uniform thin films of polymeric organic semiconductors on lyophobic gate insulator surfaces.