RESUMO
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of â¼0.03 A m-1, corresponding to a smallest-detectable current in the 200µm wide APAM ribbon of â¼6µA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
RESUMO
An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury-Brown-Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.
RESUMO
Using a home-made aerosol nebulizer, we developed a new aerosol-assisted chemical vapor deposition (AACVD) process that made it possible to synthesize vertically-aligned carbon nanotube (VACNT) arrays with heights over a few millimeters routinely. An essential part of this technique was in-situ formation of metal catalyst nanoparticles via pyrolysis of ferrocene-ethanol aerosol right before CNT synthesis. Through the optimization of aerosol supply and CVD process parameters, we were able to synthesize clean VACNT arrays as long as 4.38 mm with very low metal contents in 20 min. Furthermore, it is worthy noting that such an outstanding height is achieved very quickly without supporting materials and water-assistance. By taking advantage of almost complete inhibition of CNT growth on low melting-temperature metals, we were able to fabricate patterned VACNT arrays by combining AACVD process with a conventional photolithograpic patterning of gold lines. Characterizations of as-grown nanotubes such as morphology, purity, and metal contents are presented.
