Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy.

The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 µm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling.

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Review on infrared nanospectroscopy of natural 2D phyllosilicates.

Phyllosilicates have emerged as a promising class of large bandgap lamellar insulators. Their applications have been explored from the fabrication of graphene-based devices to 2D heterostructures based on transition metal dichalcogenides with enhanced optical and polaritonics properties. In this review, we provide an overview of the use of infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) for studying nano-optics and local chemistry of a variety of 2D natural phyllosilicates. Finally, we bring a brief update on applications that combine natural lamellar minerals into multifunctional nanophotonic devices driven by electrical control.

Graphene Nano-Optics in the Terahertz Gap.

Graphene nano-optics at terahertz (THz) frequencies (ν) is theoretically anticipated to feature extraordinary effects. However, interrogating such phenomena is nontrivial, since the atomically thin graphene dimensionally mismatches the THz radiation wavelength reaching hundreds of micrometers. Greater challenges happen in the THz gap (0.1-10 THz) wherein light sources are scarce. To surpass these barriers, we use a nanoscope illuminated by a highly brilliant and tunable free-electron laser to image the graphene nano-optical response from 1.5 to 6.0 THz. For ν < 2 THz, we observe a metal-like behavior of graphene, which screens optical fields akin to noble metals, since this excitation range approaches its charge relaxation frequency. At 3.8 THz, plasmonic resonances cause a field-enhancement effect (FEE) that improves the graphene imaging power. Moreover, we show that the metallic behavior and the FEE are tunable upon electrical doping, thus providing further control of these graphene nano-optical properties in the THz gap.

Identification of Exciton Complexes in Charge-Tunable Janus WSeS Monolayers.

Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>18 meV) spectra obfuscating their specific excitonic origin. Here, we identify the neutral and the negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayers with ∼6 meV optical line widths. We integrate Janus monolayers into vertical heterostructures, allowing doping control. Magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. Our results pave the way for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and the development of Janus-based optoelectronic devices, which requires charge-state control and integration into vertical heterostructures.

Redox exfoliated NbS2: characterization, stability, and oxidation.

Niobium disulfide is a layered transition metal dichalcogenide that is being exploited as a two-dimensional material. Although it is a superconductor at low temperatures and demonstrates great potential to be applied as a catalyst or co-catalyst in hydrogen evolution reactions, only a few reports have demonstrated the synthesis of a few-layer NbS2. However, before applications can be pursued, it is essential to understand the main characteristics of the obtained material and its stability under an atmospheric environment. In this work, we conducted a thorough characterization of redox-exfoliated NbS2 nanoflakes regarding their structure and stability in an oxygen-rich environment. Structural, morphological, and spectroscopic characterization demonstrated different fingerprints associated with distinct oxidation processes. This led us to identify oxide species and analyse the stability of the redox exfoliated NbS2 nanosheets in air, suggesting the most likely reaction pathways during the NbS2 interaction with oxygen, which agrees with our density-functional theory results. The mastery over the stability of layered materials is of paramount importance to target future applications, mainly because the electronic properties of these materials are strongly affected by an oxidizing environment.

Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials.

Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.

Efficient phonon cascades in WSe2 monolayers.

Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer transition metal dichalcogenides in optoelectronics. The primary stages of carrier relaxation affect a plethora of subsequent physical mechanisms. Here we measure light scattering and emission in tungsten diselenide monolayers close to the laser excitation energy (down to ~0.6 meV). We reveal a series of periodic maxima in the hot photoluminescence intensity, stemming from energy states higher than the A-exciton state. We find a period ~15 meV for 7 peaks below (Stokes) and 5 peaks above (anti-Stokes) the laser excitation energy, with a strong temperature dependence. These are assigned to phonon cascades, whereby carriers undergo phonon-induced transitions between real states above the free-carrier gap with a probability of radiative recombination at each step. We infer that intermediate states in the conduction band at the Λ-valley of the Brillouin zone participate in the cascade process of tungsten diselenide monolayers. This provides a fundamental understanding of the first stages of carrier-phonon interaction, useful for optoelectronic applications of layered semiconductors.

Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS2 and Gold.

Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and atomic force microscopy to investigate the spatially resolved hot-electron-transfer dynamics at the monolayer (1L) MoS2/Au interface. A spatially heterogeneous distribution of 1L-MoS2/Au gap distances, along with the sub-80 nm spatial- and sub-60 fs temporal resolution of TR-PEEM, permits the simultaneous measurement of electron-transfer rates across a range of 1L-MoS2/Au distances. These decay exponentially as a function of distance, with an attenuation coefficient ß âˆ¼ 0.06 ± 0.01 Å-1, comparable to molecular wires. Ab initio simulations suggest that surface plasmon-like states mediate hot-electron-transfer, hence accounting for its weak distance dependence. The weak distance dependence of the interfacial hot-electron-transfer rate indicates that this process is insensitive to distance fluctuations at the TMD/metal interface, thus motivating further exploration of optoelectronic devices based on hot carriers.

Local photodoping in monolayer MoS2.

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices.

Anisotropic Flow Control and Gate Modulation of Hybrid Phonon-Polaritons.

Light-matter interaction in two-dimensional photonic or phononic materials allows for the confinement and manipulation of free-space radiation at sub-wavelength scales. Most notably, the van der Waals heterostructure composed of graphene (G) and hexagonal boron nitride (hBN) provides for gate-tunable hybrid hyperbolic plasmon phonon-polaritons (HP3). Here, we present the anisotropic flow control and gate-voltage modulation of HP3 modes in G-hBN on an air-Au microstructured substrate. Using broadband infrared synchrotron radiation coupled to a scattering-type near-field optical microscope, we launch HP3 waves in both hBN Reststrahlen bands and observe directional propagation across in-plane heterointerfaces created at the air-Au junction. The HP3 hybridization is modulated by varying the gate voltage between graphene and Au. This modifies the coupling of continuum graphene plasmons with the discrete hBN hyperbolic phonon polaritons, which is described by an extended Fano model. This work represents the first demonstration of the control of polariton propagation, introducing a theoretical approach to describe the breaking of the reflection and transmission symmetry for HP3 modes. Our findings augment the degree of control of polaritons in G-hBN and related hyperbolic metamaterial nanostructures, bringing new opportunities for on-chip nano-optics communication and computing.

Charge-tuneable biexciton complexes in monolayer WSe2.

Monolayer transition metal dichalcogenides have strong Coulomb-mediated many-body interactions. Theoretical studies have predicted the existence of numerous multi-particle excitonic states. Two-particle excitons and three-particle trions have been identified by their optical signatures. However, more complex states such as biexcitons have been elusive due to limited spectral quality of the optical emission. Here, we report direct evidence of two biexciton complexes in monolayer tungsten diselenide: the four-particle neutral biexciton and the five-particle negatively charged biexciton. We distinguish these states by power-dependent photoluminescence and demonstrate full electrical switching between them. We determine the band states of the elementary particles comprising the biexcitons through magneto-optical spectroscopy. We also resolve a splitting of 2.5 meV for the neutral biexciton, which we attribute to the fine structure, providing reference for subsequent studies. Our results unveil the nature of multi-exciton complexes in transitionmetal dichalcogenides and offer direct routes towards deterministic control in many-body quantum phenomena.

Anomalous Nonlinear Optical Response of Graphene Near Phonon Resonances.

In this work we probe the third-order nonlinear optical property of graphene and hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman spectroscopy. When the energy difference of the two input fields matches the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected, while for graphene an anomalous decrease is observed. This behavior can be understood in terms of a coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure nonlinear optical response.

Graphene/h-BN plasmon-phonon coupling and plasmon delocalization observed by infrared nano-spectroscopy.

We observed the coupling of graphene Dirac plasmons with different surfaces using scattering-type scanning near-field optical microscopy integrated into a mid-infrared synchrotron-based beamline. A systematic investigation of a graphene/hexagonal boron nitride (h-BN) heterostructure is carried out and compared with the well-known graphene/SiO2 heterostructure. Broadband infrared scanning near-field optical microscopy imaging is able to distinguish between the graphene/h-BN and the graphene/SiO2 heterostructure as well as differentiate between graphene stacks with different numbers of layers. Based on synchrotron infrared nanospectroscopy experiments, we observe a coupling of surface plasmons of graphene and phonon polaritons of h-BN (SPPP). An enhancement of the optical band at 817 cm(-1) is observed at graphene/h-BN heterostructures as a result of hybridization between graphene plasmons and longitudinal optical phonons of h-BN. Furthermore, longitudinal optical h-BN modes are preserved on suspended graphene regions (bubbles) where the graphene sheet is tens of nanometers away from the surface while the amplitude of transverse optical h-BN modes decrease.

Asymmetric effect of oxygen adsorption on electron and hole mobilities in bilayer graphene: long- and short-range scattering mechanisms.

We probe electron and hole mobilities in bilayer graphene under exposure to molecular oxygen. We find that the adsorbed oxygen reduces electron mobilities and increases hole mobilities in a reversible and activated process. Our experimental results indicate that hole mobilities increase due to the screening of long-range scatterers by oxygen molecules trapped between the graphene and the substrate. First principle calculations show that oxygen molecules induce resonant states close to the charge neutrality point. Electron coupling with such resonant states reduces the electron mobilities, causing a strong asymmetry between electron and hole transport. Our work demonstrates the importance of short-range scattering due to adsorbed species in the electronic transport in bilayer graphene on SiO2 substrates.

Metal-doped carbon nanotubes interacting with vitamin C.

In this paper, the structural, electronic and magnetic properties of carbon nanotubes doped with Al, Fe, Mn and Ti atoms interacting with vitamin C molecules are studied through first principles simulations based on the density functional theory. The charge transfers are obtained from the vitamins into the tubes for adsorption and substitutional doping cases. The highest binding energies of vitamin C molecules are calculated for the Al substitutional and Ti adsorbed cases, with values of about 1.20 and 3.26 eV, respectively. The results demonstrated that, depending on doping, the spin polarizations and the conductance characters of the systems can change, which could be relevant to improve the molecule adsorption on carbon nanostructures.