Midwave resonant cavity infrared detectors (RCIDs) with suppressed background noise.

We report a resonant cavity infrared detector (RCID) with an InAsSb/InAs superlattice absorber with a thickness of only ≈ 100 nm, a 33-period GaAs/Al0.92Ga0.08As distributed Bragg reflector bottom mirror, and a Ge/SiO2/Ge top mirror. At a low bias voltage of 150 mV, the external quantum efficiency (EQE) reaches 58% at the resonance wavelength λres ≈ 4.6 µm, with linewidth δλ = 19-27 nm. The thermal background current for a realistic system scenario with f/4 optic that views a 300 K scene is estimated by integrating the photocurrent generated by background spanning the entire mid-IR spectral band (3-5 µm). The resulting specific detectivity is a factor of 3 lower than for a state-of-the-art broadband HgCdTe device at 300 K, where dark current dominates the noise. However, at 125 K where the suppression of background noise becomes critical, the estimated specific detectivity D* of 5.5 × 1012 cm Hz½/W is more than 3× higher. This occurs despite a non-optimal absorber cut-off that causes the EQE to decrease rapidly with decreasing temperature, e.g., to 33% at 125 K. The present RCID's advantage over the broadband device depends critically on its low EQE at non-resonance wavelengths: ≤ 1% in the range 3.9-5.5 µm. Simulations using NRL MULTIBANDS indicate that impact ionization in the bottom contact and absorber layers dominates the dark current at near ambient temperatures. We expect future design modifications to substantially enhance D* throughout the investigated temperature range of 100-300 K.

Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates.

The high-quality growth of midwave infrared light emitters on silicon substrates will advance their incorporation into photonic integrated circuits, and also introduce manufacturing advantages over conventional devices grown on lattice-matched GaSb. Here we report interband cascade light emitting devices (ICLEDs) grown on 4 degree offcut silicon with 12% lattice mismatch. Four wafers produced functioning devices, with variations from wafer to wafer but uniform performance of devices from a given wafer. The full width at half maxima for the (004) GaSb rocking curves were as narrow as ∼ 163 arc seconds, and the root mean square surface roughness as small as 3.2 nm. Devices from the four wafers, as well as from a control structure grown to the same design on GaSb, were mounted epitaxial-side-up (epi-up). While core heating severely limited continuous wave (cw) emission from the control devices at relatively modest currents, efficient heat dissipation via the substrate allowed output from the devices on silicon to increase up to much higher currents. Although the devices on silicon had higher leakage currents, probably occurring primarily at dislocations resulting from the lattice-mismatched growth, accounting for differences in architecture the efficiency at high cw current was approximately 75% of that of our previous best-performing standard epi-down ICLEDs grown on GaSb. At 100 mA injection current, 200-µm-diameter mesas produced 184 µW of cw output power when operated at T = 25 °C, and 140 µW at 85°C. Epi-up mid-IR light emitters grown on silicon will be far simpler to process and much less expensive to manufacture than conventional devices grown on GaSb and mounted epi-down.

Methane detection using an interband-cascade LED coupled to a hollow-core fiber.

Midwave infrared interband-cascade light-emitting devices (ICLEDs) have the potential to improve the selectivity, stability, and sensitivity of low-cost gas sensors. We demonstrate a broadband direct absorption CH4 sensor with an ICLED coupled to a plastic hollow-core fiber (1 m length, 1500 µm inner diameter). The sensor achieves a 1σ noise equivalent absorption of approximately 0.2 ppmv CH4 at 1 Hz, while operating at a low drive power of 0.5 mW. A low-cost sub-ppmv CH4 sensor would make monitoring emissions more affordable and more accessible for many relevant industries, such as the petroleum, agriculture, and waste industries.

Interband Cascade Photonic Integrated Circuits on Native III-V Chip.

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

Near-infrared frequency comb generation in mid-infrared interband cascade lasers.

The interband cascade laser (ICL) is an ideal candidate for low-power mid-infrared frequency comb spectroscopy. In this work, we demonstrate that its intracavity second-order optical nonlinearity induces a coherent up-conversion of the generated mid-infrared light to the near-infrared through second-harmonic and sum-frequency generation. At 1.8 µm, 10 mW of light at 3.6 µm convert into sub-nanowatt levels of optical power, spread across 30 nm of spectral coverage. The observed linear-to-nonlinear conversion efficiency exceeds ${3\;{\unicode{x00B5} {\rm W/W}}^2}$3µW/W2 in continuous wave operation. We use a dual-band ICL frequency comb source to characterize water vapor absorption in both spectral bands.

Mid-infrared dual-comb spectroscopy with interband cascade lasers.

Two semiconductor optical frequency combs, consuming less than 1 W of electrical power, are used to demonstrate high-sensitivity mid-infrared dual-comb spectroscopy in the important 3-4 µm spectral region. The devices are 4 mm long by 4 µm wide, and each emits 8 mW of average optical power. The spectroscopic sensing performance is demonstrated by measurements of methane and hydrogen chloride with optical multi-pass cell sensitivity enhancement. The system provides a spectral coverage of 33 cm-1 (1 THz), 0.32 cm-1 (9.7 GHz) frequency sampling interval, and peak signal-to-noise ratio of ∼100 at 100 µs integration time. The monolithic design, low drive power, and direct generation of mid-infrared radiation are highly attractive for portable broadband spectroscopic instrumentation in future terrestrial and space applications.

Resonant-cavity infrared detector with five-quantum-well absorber and 34% external quantum efficiency at 4 µm.

We report resonant-cavity infrared detectors with 34% external quantum efficiency at room temperature at the resonant wavelength of 4.0 µm, even though the absorber consists of only five quantum wells with a total thickness of 50 nm. The full width at half maximum (FWHM) linewidth is 46 nm, and the peak absorption is enhanced by nearly a factor of 30 over that for a single pass through the absorber. In spite of an unfavorable Shockley-Read lifetime in the current material, the dark current density is at the level of state-of-the-art HgCdTe detectors as quantified by "Rule 07." The Johnson-noise limited detectivity (D*) at 21°C is 7 × 109 cm Hz½/W. We expect that future improvements in the device design and material quality will lead to higher quantum efficiency, as well as a significant reduction of the dark current density consistent with the very thin absorber.

Passively mode-locked interband cascade optical frequency combs.

Since their inception, optical frequency combs have transformed a broad range of technical and scientific disciplines, spanning time keeping to navigation. Recently, dual comb spectroscopy has emerged as an attractive alternative to traditional Fourier transform spectroscopy, since it offers higher measurement sensitivity in a fraction of the time. Midwave infrared (mid-IR) frequency combs are especially promising as an effective means for probing the strong fundamental absorption lines of numerous chemical and biological agents. Mid-IR combs have been realized via frequency down-conversion of a near-IR comb, by optical pumping of a micro-resonator, and beyond 7 µm by four-wave mixing in a quantum cascade laser. In this work, we demonstrate an electrically-driven frequency comb source that spans more than 1 THz of bandwidth centered near 3.6 µm. This is achieved by passively mode-locking an interband cascade laser (ICL) with gain and saturable absorber sections monolithically integrated on the same chip. The new source will significantly enhance the capabilities of mid-IR multi-heterodyne frequency comb spectroscopy systems.

Compact photoacoustic module for methane detection incorporating interband cascade light emitting device.

A photoacoustic module (PAM) for methane detection was developed by combining a novel 3.2 µm interband cascade light emitting device (ICLED) with a compact differential photoacoustic cell. The ICLED with a 22-stage interband cascade active core emitted a collimated power of ~700 µW. A concave Al-coat reflector was positioned adjacent to the photoacoustic cell to enhance the gas absorption length. Assembly of the ICLED and reflector with the photoacoustic cell resulted in a robust and portable PAM without any moving parts. The PAM performance was evaluated in terms of operating pressure, sensitivity and linearity. A 1σ detection limit of 3.6 ppmv was achieved with a 1-s integration time.

Spectral narrowing and stabilization of interband cascade laser by volume Bragg grating.

A volume Bragg grating recorded in photo-thermo-refractive glass was used to spectrally lock the emission from an 18-µm-wide interband cascade laser ridge to a wavelength of 3.12 µm. The spectral width of emission into the resonant mode is narrowed by more than 300 times, and the thermal wavelength shift is reduced by 60 times. While the power loss penalty is about 30%, the spectral brightness increases by 200 times.

High-power continuous-wave interband cascade lasers with 10 active stages.

We report the pulsed and continuous wave (cw) performance of 10-stage interband cascade lasers (ICLs) emitting at both λ ≈3.2 µm and λ ≈3.45 µm. The slope efficiency is higher while the external differential quantum efficiency per stage remains about the same when comparison is made to earlier results for 7-stage ICLs with similar carrier-rebalanced designs. At T = 25°C, an 18-µm-wide ridge with 4.5 mm cavity length and high-reflection/anti-reflection coatings emits up to 464 mW of cw output power with beam quality factor M(2) = 1.9, for higher brightness than has ever been reported previously for an ICL. When the cavity length is reduced to 1 mm, both the 10-stage and 7-stage devices reach 18% cw wallplug efficiency at T = 25°C.

Pulsed and CW performance of 7-stage interband cascade lasers.

We report a narrow-ridge interband cascade laser emitting at λ ≈3.5 µm that produces up to 592 mW of cw power with a wallplug efficiency of 10.1% and beam quality factor of M(2) = 3.7 at T = 25 °C. A pulsed cavity length study of broad-area lasers from the same wafer confirms that the 7-stage structure with thicker separate confinement layers has a reduced internal loss of ≈3 cm(-1). More generally, devices from a large number of wafers with similar 7-stage designs and wavelengths spanning 2.95-4.7 µm exhibit consistently higher pulsed external differential quantum efficiencies than earlier state-of-the-art ICLs.

High-power room-temperature continuous-wave mid-infrared interband cascade lasers.

We demonstrate cw output powers >290 mW into a nearly diffraction-limited (M² ≈2.2) output beam from an interband cascade laser operating at λ = 3.6-3.7 µm at room temperature. The interband cascade laser was designed for nearly equal electron and hole populations in the active region with heavy electron-injector doping, and was processed into narrow ridges mounted epitaxial side down on a copper heat sink. A 15.7-µm-wide, 4-mm-long ridge with the back facet coated for high reflection (HR) and an anti-reflection-coated front facet produced 253 mW of cw output power at T = 25°C into a beam with M² ≈2.7. Furthermore, corrugating the sidewalls of the ridge leads to a 20% improvement in the brightness. A 15.7-µm-wide, 0.5-mm-long ridge with an HR-coated back facet and an uncoated front facet exhibited a maximum cw wall-plug efficiency of nearly 15% at room temperature.

Continuous-wave interband cascade lasers operating above room temperature at λ = 4.7-5.6 µm.

We have substantially improved the performance of interband cascade lasers emitting at λ = 4.7 and 5.6 µm, by applying the recently-pioneered approach of heavily doping the injector regions to rebalance the electron and hole concentrations in the active quantum wells. Ridges of ≈10 µm width, 4 mm length, and high-reflectivity back facets achieve maximum continuous wave operating temperatures of 60°C and 48°C, respectively. The threshold power density of ≈1 kW/cm2 at T = 25°C is over an order of magnitude lower than for state-of-the-art quantum cascade lasers emitting in this spectral range.

Performance characteristics of a continuous-wave compact widely tunable external cavity interband cascade lasers.

We present the design and performance of a novel broadly tunable continuous-wave external-cavity interband cascade laser (ECicL). The ICL die growth and fabrication, as well as the external cavity geometry are described. Tuning across the 3.2-3.35 microm wavelength range, limited by the gain width of the ICL active medium, is achieved at a maximum power level of 4 mW.