InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.

Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In0.53Ga0.47As nanowires on InP substrates, linear arrays of In0.53Ga0.47As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices.

Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.

Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III-V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III-V semiconductor heterostructures in situ.

Electronic properties of atomically coherent square PbSe nanocrystal superlattice resolved by Scanning Tunneling Spectroscopy.

Rock-salt lead selenide nanocrystals can be used as building blocks for large scale square superlattices via two-dimensional assembly of nanocrystals at a liquid-air interface followed by oriented attachment. Here we report Scanning Tunneling Spectroscopy measurements of the local density of states of an atomically coherent superlattice with square geometry made from PbSe nanocrystals. Controlled annealing of the sample permits the imaging of a clean structure and to reproducibly probe the band gap and the valence hole and conduction electron states. The measured band gap and peak positions are compared to the results of optical spectroscopy and atomistic tight-binding calculations of the square superlattice band structure. In spite of the crystalline connections between nanocrystals that induce significant electronic couplings, the electronic structure of the superlattices remains very strongly influenced by the effects of disorder and variability.

Elaboration of Nanomagnet Arrays: Organization and Magnetic Properties of Mass-Selected FePt Nanoparticles Deposited on Epitaxially Grown Graphene on Ir(111).

The moiré pattern created by the epitaxy of a graphene sheet on an iridium substrate can be used as a template for the growth of 2D atomic or cluster arrays. We observed for the first time a coherent organization of hard magnetic preformed FePt nanoparticles on the 2D lattice of graphene on Ir(111). Nanoparticles of 2 nm diameter have been mass selected in a gas phase and deposited with low energy on the hexagonal moiré pattern. Their morphology and organization have been investigated using grazing incidence small angle x-ray scattering, while their magnetic properties have been studied by x-ray magnetic circular dichroism, both pointing to a FePt cluster-graphene surface specific interaction. The spatial coherence of the nanoparticles is preserved upon annealing up to 700 °C where the hard magnetic phase of FePt is obtained.

High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds.

Two-dimensional networks of quantum dots connected by atomic bonds have an electronic structure that is distinct from that of arrays of quantum dots coupled by ligand molecules. We prepared atomically coherent two-dimensional percolative networks of PbSe quantum dots connected via atomic bonds. Here, we show that photoexcitation leads to generation of free charges that eventually decay via trapping. The charge mobility probed with an AC electric field increases with frequency from 150 ± 15 cm(2) V(-1) s(-1) at 0.2 terahertz to 260 ± 15 cm(2) V(-1) s(-1) at 0.6 terahertz. Gated four-probe measurements yield a DC electron mobility of 13 ± 2 cm(2) V(-1) s(-1). The terahertz mobilities are much higher than for arrays of quantum dots coupled via surface ligands and are similar to the highest DC mobilities reported for PbSe nanowires. The terahertz mobility increases only slightly with temperature in the range of 15-290 K. The extent of straight segments in the two-dimensional percolative networks limits the mobility, rather than charge scattering by phonons.

Nanoscale carrier multiplication mapping in a Si diode.

Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency. Atomically well-ordered areas of the p-n junction surface sustain the highest CM rate, demonstrating the key role of the surface in reaching high yield.