RESUMO
We present the raw data obtained from release rate at 1300°C of Xe and Kr implanted in UO2, related to [1]. We performed different sample preparation (polishing treatment) on polycrystalline and monocrystalline UO2. Ion implantation were performed at various fluences between 9.5 × 1010 to 5 × 1014 i/cm2 in UO2 samples. Release rate of Xe and Kr are obtained at 1300°C under vacuum from desorption experiments performed on the PIAGARA plateform at the CENBG (Centre d'Etudes Nucléaires de Bordeaux-Gradignan). Since we made a variety of samples depending on multiple parameters (sample type, sample preparation, ion implantation type and fluence), these data represent a serious amount of work that could be saved for the scientific community that might use them for other purposes such as burst modelling.