An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique.

An ultrafast Active Quenching-Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast. The fast quenching decreases the avalanche charges, therefore resulting in the afterpulsing reduction. Both post-layout and experimental results are presented and are highly in accordance with each other. It is shown that the proposed AQAR circuit is able to detect the avalanche in less than 40 ps and reduce the avalanche charge and the afterpulsing up to 50%.

A Comparative Study of On-Body Radio-Frequency Links in the 420 MHz⁻2.4 GHz Range.

While there exists a wide variety of radio frequency (RF) technologies amenable for usage in Wireless Body Area Networks (WBANs), which have been studied separately before, it is currently still unclear how their performance compares in true on-body scenarios. In this paper, a single reference on-body scenario-that is, propagation along the arm-is used to experimentally compare six distinct RF technologies (between 420 MHz and 2.4 GHz) in terms of path loss. To further quantify on-body path loss, measurements for five different on-body scenarios are presented as well. To compensate for the effect of often large path losses, two mitigation strategies to (dynamically) improve on-body links are introduced and experimentally verified: beam steering using a phased array, and usage of on-body RF repeaters. The results of this study can serve as a tool for WBAN designers to aid in the selection of the right RF frequency and technology for their application.

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI.

This paper presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 µm by 250 µm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables an efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1-V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. The functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.