Dramatic improvement in the stability and mechanism of high-performance inverted polymer solar cells featuring a solution-processed buffer layer.

In this study, we demonstrate inverted PTB7:PC71BM polymer solar cells (PSCs) featuring a solution-processed s-MoO3 hole transport layer (HTL) that can, after thermal aging at 85 °C, retain their initial power conversion efficiency (PCE) for at least 2200 h. The T80 lifetimes of the PSCs incorporating the novel s-MoO3 HTL were up to ten times greater than those currently reported for PTB7- or low-band-gap polymer:PCBM PSCs, the result of the inhibition of burn-in losses and long-term degradation under various heat-equivalent testing conditions. We used X-ray photoelectron spectroscopy (XPS) to study devices containing thermally deposited t-MoO3 and s-MoO3 HTLs and obtain a mechanistic understanding of how the robust HTL is formed and how it prevented the PSCs from undergoing thermal degradation. Heat tests revealed that the mechanisms of thermal inter-diffusion and interaction of various elements within active layer/HTL/Ag electrodes controlled by the s-MoO3 HTL were dramatically different from those controlled by the t-MoO3 HTL. The new prevention mechanism revealed here can provide the conceptual strategy for designing the buffer layer in the future. The PCEs of PSCs featuring s-MoO3 HTLs, measured in damp-heat (65 °C/65% RH; 85 °C per air) and light soaking tests, confirmed their excellent stability. Such solution-processed MoO3 HTLs appear to have great potential as replacements for commonly used t-MoO3 HTLs.

Self-assembled magnetic heterostructure of Co/DLC films.

In order to adapt to the quick and large amount of necessity in data flow for 5G cloud generation, it is necessary to develop a technology of warm storage device in market which takes a great balance between the reading/writing performance and the price per storage capacity. The technologies of warm storage devices are assumed to adopt phase change memory (PCM), resistive random access memory or magnetoresistive random access memory which have the highest possibilities to 5G structures and magnetic properties of Co on non-hydrogenated diamond like carbon (DLC)/Si(100) films and Co/DLC interface are investigated. The self-assembled magnetic heterostructure is firstly reported in hexagonal close packing Co layers perpendicular magnetic anisotropy (PMA) on Co carbide layers (in-plane) during Co deposited on DLC/Si(100). A PMA/in-plane magnetic heterostructure is expected to have the highest switching current to the energy barrier ratio of near 4 in previous report, which has great potential for developing warm memory devices. Based on these unique characteristics, we provide a novel design called magnetic anisotropy-phase change memory (Mani-PCM) which can impact the developing blueprint of memory. The working process of Mani-PCM includes in set, reset and read states as a universal PCM. This brand new technology is highly promising as warm memory devices including high reading/writing performance and economical price per storage capacity.

A practical method for fabricating superparamagnetic films and the mechanism involved.

Due to the widespread applications of biosensors, such as in magnetic resonance imaging, cancer detection and drug delivery, the use of superparamagnetic materials for preparing biosensors has increased greatly. We report herein on a strategy toward fabrication of a nanoscale biosensor composed of superparamagnetic films. On increasing the film thickness of magnetic layers, a phase transition typically occurs from either a low-Curie-temperature state or a superparamagnetic state to a ferromagnetic state. A new finding is demonstrated wherein a phase transition of such a superparamagnetic phase can be induced by controlling the thickness of ultrathin ferromagnetic layers with perpendicular magnetic anisotropy. Both the M-H curve with zero coercive force at 300 K and deviations of the normalized hysteresis loop at 2 K confirm the superparamagnetic state of Co/Ir(111) at room temperature. An overstrained film transforming into clusters (OFTC) model based on the new finding and our experimental evidence is proposed for modeling this phenomenon. From the energetic point of view of the OFTC model, we propose a limited distortion mechanism that can be useful in determining the critical thickness for the phase transition. This mechanism considers the balance between interfacial strain energy and surface free energy. A method for producing superparamagnetic films by taking advantage of the accumulation of strain and relaxation is reported.

Comparisons of magnetic defects and coercive forces for Co/Si(100) and Co/rubrene/Si(100).

Spintronics can add new functionalities to electronic devices by utilizing the spin degree of freedom of electrons. Investigating magnetic defects is crucial for the performance of spintronics devices. However, the effects of magnetic defects that are introduced by the presence of organic materials on their magnetic properties remain unclear. Herein, we report on a novel method using rubrene combined with Kerr microscopy that enables quantitative and direct measurements of magnetic defect density. For Co/Si(100) at a magnetic field near the coercivity value, Kerr microscopy images show a dark image with some magnetic defects. Because of domain wall motion, small patches gradually change the contrast. These magnetic defects are immovable at different magnetic fields and serve as pinning sites for domain wall motion. Experimental evidence shows that coercive force can be reduced by controlling the magnetic defect density by introducing small amounts of rubrene into the films. Furthermore, direct quantitative measurements of magnetic defects show both a one-dimensional bowing of domain walls and strong defect-domain wall interactions in the films. Based on these findings, we propose a viable strategy for reducing the coercive force of Co/Si(100) by controlling the magnetic defect density and this new information promises to be valuable for future applications of spintronics devices.

Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface.

Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔHAg-Si, ΔHNi-Ag, and ΔHNi-Si, for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.

Enhancing the magnetic anisotropy energy by tuning the contact areas of Ag and Ni at the Ag/Ni interface.

Modifying the interfacial conditions of magnetic layers by capping with overlayers can efficiently enhance the magnetic functionality of a material. However, the mechanisms responsible for this are closely related to the crystalline structure, compositional combinations, and interfacial quality, and are generally complex. In this contribution, we explored the use of Ag ultrathin overlayers on annealed . A method for preparing magnetic layers with different levels of enhanced magnetic anisotropy energy was developed. The method essentially involves simply modifying the contact area of the metallic/magnetic interface. A rougher interface results in a larger contact area between the Ag and Ni layers, resulting in an increase in magnetic anisotropy energy. Moreover, post-annealing treatments led to the segregation of Ni atoms, thus making the enhancement in the coercive force even more efficient. A model permits an understanding of the contact area and a strategy for enhancing the magnetic anisotropy energy and the coercive force was developed. Our approaches and the developed model promise to be helpful in terms of developing potential applications of ultrathin magnetic layers in the area of spintronics.

Tuning coercive force by adjusting electric potential in solution processed Co/Pt(111) and the mechanism involved.

A combination of a solution process and the control of the electric potential for magnetism represents a new approach to operating spintronic devices with a highly controlled efficiency and lower power consumption with reduced production cost. As a paradigmatic example, we investigated Co/Pt(111) in the Bloch-wall regime. The depression in coercive force was detected by applying a negative electric potential in an electrolytic solution. The reversible control of coercive force by varying the electric potential within few hundred millivolts is demonstrated. By changing the electric potential in ferromagnetic layers with smaller thicknesses, the efficiency for controlling the tunable coercive force becomes higher. Assuming that the pinning domains are independent of the applied electric potential, an electric potential tuning-magnetic anisotropy energy model was derived and provided insights into our knowledge of the relation between the electric potential tuning coercive force and the thickness of the ferromagnetic layer. Based on the fact that the coercive force can be tuned by changing the electric potential using a solution process, we developed a novel concept of electric-potential-tuned magnetic recording, resulting in a stable recording media with a high degree of writing ability.