Effects of gain medium on the plasmonic enhancement of Forster resonance energy transfer in the vicinity of a metallic particle or cavity.

We perform theoretical studies on the plasmonic enhancement for the Forster resonance energy transfer (FRET) between a donor and an acceptor molecule in the vicinity of a metallic particle or cavity, with focus on the possible role of the addition of a clad layer of gain material can play in such a process. The results show that while the plasmonic resonances can be shifted with higher order plasmonic enhancements emerged in the presence of such a layer of gain material, optimal enhancement of the FRET rate can be achieved when gain just balances with the loss in the metal. This then leads to the existence of an optimal thickness for the gain material layer, for both particle and cavity enhancement. In addition, it is observed that the FRET efficiency can always be increased with the coating of the gain material even at the dipole plasmonic resonance when nonradiative transfer from the donor to the metal is high, provided that the gain level is not beyond a certain critical value.

Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene.

Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (~30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2(±) fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14,700 cm(3) V(-1) s(-1). The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

High-resolution angular measurement using surface-plasmon-resonance via phase interrogation at optimal incident wavelengths.

It is demonstrated that ultrahigh-resolution angular measurement can be achieved via surface-plasmon-resonance excitation in which the phase difference between p- and s-polarized reflected waves is monitored as a function of the incidence angle. Resolutions down to 1.9 x 10(-6) deg are obtained by performing the measurements at optimal incident wavelengths. This represents an order of magnitude improvement compared with previously reported values.