Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.

This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external quantum efficiencies (EQEs), which were measured at a current density of 88.6 A cm-2, when operated at 298, 318, and 338 K were 2.93, 2.84, and 2.76%, respectively; notably, however, the current droop (J-droop) in each of these cases was less than 1%. When the temperature was 358 K, the maximum EQE of 2.61% occurred at a current density of 63.3 A cm-2, and the J-droop was 1.52%. We believe that the main mechanism responsible for overcoming the J-droop was the uniform distribution of the concentrations of injected electrons and holes within the multiple quantum wells. Through the subtle design of the p-type AlGaN layer, with the optimization of the composition and doping level, the hole injection efficiency was enhanced, and the Auger recombination mechanism was inhibited in an experimental setting.

High-Performance Quasi-Two-Dimensional CsPbBr2.1Cl0.9:PEABr Perovskite Sky-Blue LEDs with an Interface Modification Layer.

This paper elucidates the increased luminescence efficiency of CsPbBr2.1Cl0.9 sky-blue perovskite light-emitting diodes (PeLEDs) achieved through the interface modification of 3,4 ethylenedioxythiophene (PEDOT):polystyrene sulfonic acid (PSS)/quasi-two-dimensional (QTD) perovskite using CsCl and CsBr materials, respectively. QTD films were fabricated using ratios of CsPbBr2.1Cl0.9 doped with phenethylamine hydrobromide (PEABr) at 60%, 80%, and 100%. The solvent dimethyl sulfide (C2H6OS) was employed under the excitation of ambient and 365-nm laser lights. The PeLED structure was composed of Al/LiF/2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/CsPbBr2.1Cl0.9:PEABr/interface modification layer/PEDOT:PSS/ITO glass. The optimized results revealed that the luminance, current efficiency, and external quantum efficiency of the QTD CsPbBr2.1Cl0.9:80% PEABr PeLED with the CsCl interface modification additive was 892 cd/m2, 3.87 cd/A, and 5.56%, respectively.

Red Light-Emitting Diodes with All-Inorganic CsPbI3/TOPO Composite Nanowires Color Conversion Films.

This work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.

Localized shape resonance on silver film perforated by H-shaped and more complex shaped hole arrays.

The experimental results of light transmission through periodic array of H-shaped hole and more complicated hole which is a combination of multiple U shape are demonstrated. The observations indicate that the localized shape resonance in the longest resonant length of unfolded U-shaped part of the hole always appears. However, localized modes resonant in smaller U-shaped length don't always appear. Localized mode with non-U-shaped resonant path cannot be seen in our sample. In addition, localized mode with different order and resonant path can be excited by different polarized light.

Reflection and emission properties of an infrared emitter.

The reflection and emission properties of an infrared emitter, which is a plasmonic multilayer structure consisting of a relief metallic grating, a waveguide layer, and a metallic substrate are investigated both experimentally and theoretically. A localized surface plasmon polariton (SPP) mode which is angular-independent in almost the full range of incident angles is observed. The thermal emission of this structure is also measured. It is found that the emission peak coincides with the angular-independent localized SPP mode. In addition, the emission spectrum of the plasmonic emitter can be predicted by investigating the reflectance spectrum.