In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T < Tc/2, the "square-shape" signal and at T > Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

Experimental determination of the phonon density of states in filled skutterudites: evidence for a localized mode of the filling atom.

The generalized density of states of LaFe4Sb12 and CeFe4Sb12 has been determined by inelastic neutron scattering and its main features are found to be in agreement with recently published calculations (J. L. Feldman, D. L. Singh, C. Kendziora, D. Mandrus and B. C. Sales, Phys. Rev. B, 2003, 68, 094301). In both compounds a localized vibrational contribution appears superposed on the low-energy Debye response. The distinct inelastic response of La in LaFe4Sb12 is obtained by subtraction of the data for the Ce filled compound and it shows even more clearly the resolution limited peak at 7 meV, attributed to the localized mode of La-atoms.