RESUMO
Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive sub-bands and showcasing diverse features of topologically distinct, anisotropic Fermi surfaces, including Lifshitz transitions and trigonal warping. Here, we study the influence of the band structure on electron dynamics within 4LG using transverse magnetic focusing. Our analysis reveals two distinct focusing peaks corresponding to the two sub-bands. Furthermore, we uncover a pronounced dependence of the focusing spectra on crystal orientations, indicative of an anisotropic Fermi surface. Utilizing the semiclassical model, we attribute this orientation-dependent behavior to the trigonal warping of the band structure. This phenomenon leads to variations in electron trajectories based on crystal orientation. Our findings not only enhance our understanding of the dynamics of electrons in 4LG but also offer a promising method for probing anisotropic Fermi surfaces in other materials.
RESUMO
High-quality VO[Formula: see text] films were fabricated on top of c-Al[Formula: see text]O[Formula: see text] substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO[Formula: see text] heterostructure were conducted. Graphene layers were placed on top of [Formula: see text] 50 and [Formula: see text] 100 nm VO[Formula: see text]. The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO[Formula: see text], to avoid the strain effect from lattice mismatch and to study how VO[Formula: see text] can affect the graphene layer. Slight increases in graphene/VO[Formula: see text] T[Formula: see text] compared to pure VO[Formula: see text] by [Formula: see text] 1.9 [Formula: see text]C and [Formula: see text] 3.8 [Formula: see text]C for CVD graphene on 100 and 50 nm VO[Formula: see text], respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T[Formula: see text] may originate from a large difference in the thermal conductivity between graphene and VO[Formula: see text]. Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G[Formula: see text] and G[Formula: see text], were observed on graphene/VO[Formula: see text] (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO[Formula: see text] phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm[Formula: see text] at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO[Formula: see text] samples. Other electronic interactions between graphene and VO[Formula: see text] are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO[Formula: see text] and introduce some new applications that utilize the controllable structural properties of graphene via the VO[Formula: see text] phase transition.
RESUMO
The structural stability and internal properties of hybrid organic-inorganic perovskites (HOIPs) have been widely investigated over the past few years. The interplay between organic cations and inorganic framework is one of the prominent features. Herein we report the evolution of Raman modes under pressure in the hybrid organic-inorganic perovskite MAPbI[Formula: see text] by combining the experimental approach with the first-principles calculations. A bulk MAPbI[Formula: see text] single crystal was synthesized via inverse temperature crystallization (ITC) technique and characterized by Raman spectroscopy, while the diamond anvil cells (DACs) was employed to compress the sample. The classification and behaviours of their Raman modes are presented. At ambient pressure, the vibrations of inorganic PbI[Formula: see text] octahedra and organic MA dominate at a low-frequency range (60-760 cm[Formula: see text]) and a fingerprint range (900-1500 cm[Formula: see text]), respectively. The applied pressure exhibits two significant changes in the Raman spectrum and indicates of phase transition. The results obtained from both experiment and calculations of the second phase at 3.26 GPa reveal that the internal vibration intensity of the PbI[Formula: see text] octahedra (< 110 cm[Formula: see text]) reduces as absences of MA libration (150-270 cm[Formula: see text]) and internal vibration of MA (450-750 cm[Formula: see text]). Furthermore, the hydrogen interactions around 1300 cm[Formula: see text] remain strong high pressure up to 5.34 GPa.
