Dispersion compensation of high-speed data using an integrated silicon nitride ring resonator.

Dispersion impairments are a well-known limitation in data center communications, limiting both the usable data rates and reaches. Several companies today adopt silicon photonics as a core technology in their transceiver products. This presents an opportunity for silicon photonics-based dispersion management technologies to be integrated with the transceiver transmitter or receiver. In this manuscript, we present a ring-resonator based, tunable dispersion compensation device, providing dispersion ranging as wide from + 12.9 × 103ps/nm to -12.3 × 103ps/nm. Thermo-optic tuning from 20°C to 70°C is demonstrated to allow continuous wavelength tuning across 200 GHz. High-speed experiments using 25 Gb/s non-return-to-zero data propagating through 20 km of single mode fiber show that a significant improvement in the eye diagram is achieved after compensation with the ring-resonator device. We demonstrate a significant improvement in the BER from 10-3 to 10-11 for data rates of 25 and 25.78125 Gb/s.

3D printed and spiral lithographically patterned erbium-doped polymer micro-waveguide amplifiers.

Infrared (IR)-emitting RE doped materials have been extensively used to fabricate active components of integrated optical devices in various fields, such as fiber amplifiers, telecommunications, optoelectronics, and waveguides. Among various RE elements, trivalent erbium ions (Er 3+) are of great interest since their emissive behavior span the low loss telecommunication window of 1300-1650 nm. In this paper, we report two types of polymeric waveguide amplifiers. 8 cm long, lithographically patterned spiral waveguides provide 8 dB of gain using a 980 nm pump power of 95 mW. Gain is observed from 1530 to 1590 nm. We further report the first demonstration of polymeric waveguide amplifiers fabricated using 3D printing methods based on two-photon lithography, paving the way for rapid prototyping of active 3D printed devices and active photonic devices which may transcend planar limitations.

Broadband silicon polarization beam splitter with a high extinction ratio using a triple-bent-waveguide directional coupler.

We report on the design and experimental demonstration of a broadband silicon polarization beam splitter (PBS) with a high extinction ratio (ER)≥30 dB. This was achieved using triple-bent-waveguide directional coupling in a single PBS, and cascaded PBS topology. For the single PBS, the bandwidths for an ER≥30 dB are 20 nm for the quasi-TE mode, and 70 nm for the quasi-TM mode when a broadband light source (1520-1610 nm) was employed. The insertion loss (IL) varies from 0.2 to 1 dB for the quasi-TE mode and 0.2-2 dB for the quasi-TM mode. The cascaded PBS improved the bandwidth of the quasi-TE mode for an ER≥30 dB to 90 nm, with a low IL of 0.2-2 dB. To the best of our knowledge, our PBS system is one of the best broadband PBSs with an ER as high as ∼42 dB and a low IL below 1 dB around the central wavelength, and experimentally demonstrated using edge-coupling.

Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

Wavelength selective mode division multiplexing on a silicon chip.

Multiplexing of optical modes in waveguides is demonstrated using coupled vertical gratings. The device utilizes sinusoidally corrugated waveguides of different widths with a period designed to multiplex information at 1.55 µm. The design, fabrication and characterization of devices is performed. Multiplexing of modes is demonstrated in optical structures which support 3 and 5 quasi-TE modes. The design utilizes counter-propagating modes in periodic structures, thus enabling the device to combine its mode division multiplexing capabilities with wavelength division multiplexing functionalities to further augment the multiplexing capacity of the device.

Second and third order dispersion generation using nonlinearly chirped silicon waveguide gratings.

The simultaneous generation of second and third order dispersion is demonstrated using nonlinearly chirped silicon waveguide gratings. The nonlinearly chirped gratings are designed to generate varying signs and magnitudes of group velocity dispersion and dispersion slope. The design, fabrication, and experimental characterization of the silicon waveguide gratings are performed. Second order dispersion as high as -2.3 X 106 ps/nm²/km and third order dispersion as high as 1.2 X 105 ps/nm²/km and as low as 1.2 X 104 ps/nm²/km is demonstrated at 1.55 µm.