Charge-Transfer-Induced Interfacial Ferromagnetism in Ferromagnet-Free Oxide Heterostructures.

Due to the strong interlayer coupling between multiple degrees of freedom, oxide heterostructures have demonstrated exotic properties that are not shown by their bulk counterparts. One of the most interesting properties is ferromagnetism at the interface formed between "nonferromagnetic" compounds. Here we report on the interfacial ferromagnetic phase induced in the superlattices consisting of the two paramagnetic oxides CaRuO3 (CRO) and LaNiO3 (LNO). By varying the sublayer thickness in the superlattice period, we demonstrate that the ferromagnetic order has been established in both CaRuO3 and LaNiO3 sublayers, exhibiting an identical Curie temperature of ∼75 K. The X-ray absorption spectra suggest a strong charge transfer from Ru to Ni at the interface, triggering superexchange interactions between Ru/Ni ions and giving rise to the emergent ferromagnetic phase. Moreover, the X-ray linear dichroism spectra reveal the preferential occupancy of the d3z2-r2 orbital for the Ru ions and the dx2-y2 orbital for the Ni ions in the heterostructure. This leads to different magnetic anisotropy of the superlattices when they are dominated by CRO or LNO sublayers. This work clearly demonstrates a charge-transfer-induced interfacial ferromagnetic phase in the whole ferromagnet-free oxide heterostructures, offering a feasible way to tailor oxide materials for desired functionalities.

2D Air-Stable Nonlayered Ferrimagnetic FeCr2S4 Crystals Synthesized via Chemical Vapor Deposition.

The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCr2S4 is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCr2S4 exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCr2S4 is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCr2S4 crystals highly attractive for future spintronic devices.

Layered Ferromagnetic Structure Caused by the Proximity Effect and Interlayer Charge Transfer for LaNiO3/LaMnO3 Superlattices.

Magnetic proximity-induced magnetism in paramagnetic LaNiO3 (LNO) has spurred intensive investigations in the past decade. However, no consensus has been reached so far regarding the magnetic order in LNO layers in relevant heterostructures. This paper reports a layered ferromagnetic structure for the (111)-oriented LNO/LaMnO3 (LMO) superlattices. It is found that each period of the superlattice consisted of an insulating LNO-interfacial phase (five unit cells in thickness, ∼1.1 nm), a metallic LNO-inner phase, a poorly conductive LMO-interfacial phase (three unit cells in thickness, ∼0.7 nm), and an insulating LMO-inner phase. All four of these phases are ferromagnetic, showing different magnetizations. The Mn-to-Ni interlayer charge transfer is responsible for the emergence of a layered magnetic structure, which may cause magnetic interaction across the LNO/LMO interface and double exchange within the LMO-interfacial layer. This work indicates that the proximity effect is an effective means of manipulating the magnetic state and associated properties of complex oxides.

Enhancing Interfacial Ferromagnetism and Magnetic Anisotropy of CaRuO3 /SrTiO3 Superlattices via Substrate Orientation.

Artificial oxide heterostructures have provided promising platforms for the exploration of emergent quantum phases with extraordinary properties. One of the most interesting phenomena is the interfacial magnetism formed between two non-magnetic compounds. Here, a robust ferromagnetic phase emerged at the (111)-oriented heterointerface between paramagnetic CaRuO3 and diamagnetic SrTiO3 is reported. The Curie temperature is as high as ≈155 K and the saturation magnetization is as large as ≈1.3 µB per formula unit for the (111)-CaRuO3 /SrTiO3 superlattices, which are obviously superior to those of the (001)-oriented counterparts and are comparable to the typical itinerant ferromagnet SrRuO3 . A strong in-plane magnetic anisotropy with six-fold symmetry is further revealed by the anisotropic magnetoresistance measurements, presenting a large in-plane anisotropic field of 3.0-3.6 T. More importantly, the magnetic easy axis of the (111)-oriented superlattices can be effectively tuned from 〈 11 2 ¯ $11\overline{2}$ 1〉 to 〈 1 1 ¯ 0 $1 \bar{1}0$ 〉 directions by increasing the layer thickness of SrTiO3 . The findings demonstrate a feasible approach to enhance the interface coupling effect by varying the stacking orientation of oxide heterostructures. The tunable magnetic anisotropy also shows potential applications in low-power-consumption or exchange spring devices.

Direct Observation of Magnetic Skyrmions and Their Current-Induced Dynamics in Epitaxial Single-Crystal Oxide Films.

Magnetic skyrmions are scarcely investigated for single-crystal quality films, for which skyrmions may have a remarkable performance. Even in the limited studies in this aspect, the skyrmions are usually probed by the topological Hall effect, missing important information on dynamic properties. Here, we present a comprehensive investigation on the generation/manipulation of magnetic skyrmions in La0.67Ba0.33MnO3 single-crystal films. Using the technique of magnetic force microscopy, the current-driven skyrmion dynamics are directly observed. Unlike isolated skyrmions produced by magnetic field alone, closely packed skyrmions can be generated by electric pulses in a magnetic background, with a high density (∼60/µm2) and a small size (dozens of nanometers). The threshold current moving skyrmions is ∼2.3 × 104 A/cm2, 2-3 orders of magnitude lower than that required by metallic multilayers or van der Waals ferromagnetic heterostructures. Our work demonstrates the great potential of single-crystal oxide films in developing skyrmion-based devices.

Liquid Phase Edge Epitaxy of Transition-Metal Dichalcogenide Monolayers.

Precise monolayer epitaxy is important for two-dimensional (2D) semiconductors toward future electronics. Here, we report a new self-limited epitaxy approach, liquid phase edge epitaxy (LPEE), for precise-monolayer epitaxy of transition-metal dichalcogenides. In this method, the liquid solution contacts 2D grains only at the edges, which confines the epitaxy only at the grain edges and then precise monolayer epitaxy can be achieved. High-temperature in situ imaging of the epitaxy progress directly supports this edge-contact epitaxy mechanism. Typical transition-metal dichalcogenide monolayers (MX2, M = Mo, W, and Re; X = S or Se) have been obtained by LPEE with a proper choice of molten alkali halide solvents (AL, A = Li, Na, K, and Cs; L = Cl, Br, or I). Furthermore, alloying and magnetic-element doping have also been realized by taking advantage of the liquid phase epitaxy approach. This LPEE method provides a precise and highly versatile approach for 2D monolayer epitaxy and can revolutionize the growth of 2D materials toward electronic applications.

Giant Exchange-Bias-Like Effect at Low Cooling Fields Induced by Pinned Magnetic Domains in Y2 NiIrO6 Double Perovskite.

Exchange bias (EB) is highly desirable for widespread technologies. Generally, conventional exchange-bias heterojunctions require excessively large cooling fields for sufficient bias fields, which are generated by pinned spins at the interface of ferromagnetic and antiferromagnetic layers. It is crucial for applicability to obtain considerable exchange-bias fields with minimum cooling fields. Here, an exchange-bias-like effect is reported in a double perovskite, Y2 NiIrO6 , which shows long-range ferrimagnetic ordering below 192 K. It displays a giant bias-like field of 1.1 T with a cooling field of only 15 Oe at 5 K. This robust phenomenon appears below 170 K. This fascinating bias-like effect is the secondary effect of the vertical shifts of the magnetic loops, which is attributed to the pinned magnetic domains due to the combination of strong spin-orbit coupling on Ir, and antiferromagnetically coupled Ni- and Ir-sublattices. The pinned moments in Y2 NiIrO6 are present throughout the full volume, not just at the interface as in conventional bilayer systems.

Infinite-layer/perovskite oxide heterostructure-induced high-spin states in SrCuO2/SrRuO3 bilayer films.

Heterostructures composed of dissimilar oxides with different properties offer opportunities to develop emergent devices with desired functionalities. A key feature of oxide heterostructures is interface electronics and orbital reconstructions. Here, we combined infinite-layered SrCuO2 and perovskite SrRuO3 into heterostructures. A rare high spin state as large as 3.0 µB f.u-1 and an increase in Curie temperature by 12 K are achieved in an ultrathin SrRuO3 film capped by a SrCuO2 layer. Atomic-scale lattice imaging shows the uniform CuO2-plane-to-RuO5-pyramid connection at the interface, where the regularly arranged RuO5 pyramids were elongated along the out-of-plane direction. As revealed by theoretical calculations and spectral analysis, these features finally result in an abnormally high spin state of the interfacial Ru ions with highly polarized eg orbitals. The present work demonstrates that oxygen coordination engineering at the infinite-layer/perovskite oxide interface is a promising approach towards advanced oxide electronics.

Vapor Deposition of Magnetic Van der Waals NiI2 Crystals.

The recent discovery of van der Waals magnetic materials has attracted great attention in materials science and spintronics. The preparation of ultrathin magnetic layers down to atomic thickness is challenging and is mostly by mechanical exfoliation. Here, we report vapor deposition of magnetic van der Waals NiI2 crystals. Two-dimensional (2D) NiI2 flakes are grown on SiO2/Si substrates with a thickness of 5-40 nm and on hexagonal boron nitride (h-BN) down to monolayer thickness. Temperature-dependent Raman spectroscopy reveals robust magnetic phase transitions in the as-grown 2D NiI2 crystals down to trilayer. Electrical measurements show a semiconducting transport behavior with a high on/off ratio of 106 for the NiI2 flakes. Lastly, density functional theory calculation shows an intralayer ferromagnetic and interlayer antiferromagnetic ordering in 2D NiI2. This work provides a feasible approach to epitaxy 2D magnetic transition metal halides and also offers atomically thin materials for spintronic devices.

Long-Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases.

To incorporate spintronics functionalities into two-dimensional devices, it is strongly desired to get two-dimensional electron gases (2DEGs) with high spin polarization. Unfortunately, the magnetic characteristics of the typical 2DEG at the LaAlO3/SrTiO3 interface are very weak due to the nonmagnetic character of SrTiO3 and LaAlO3. While most of the previous works focused on perovskite oxides, here, we extended the exploration for magnetic 2DEG beyond the scope of perovskite combinations, composing 2DEG with SrTiO3 and NaCl-structured EuO that owns a large saturation magnetization and a fairly high Curie temperature. We obtained the 2DEGs that show long-range magnetic order and thus unusual behaviors marked by isotropic butterfly shaped magnetoresistance and remarkable anomalous Hall effect. We found evidence for the presence of more conductive domain walls than elsewhere in the oxide layer where the 2DEG resides. More than that, a relation between interfacial magnetism and carrier density is established. On this basis, the intermediate magnetic states between short-range and long-range ordered states can be achieved. The present work provides guidance for the design of high-performance magnetic 2DEGs.

Thermal Spin Injection and Inverse Edelstein Effect of the Two-Dimensional Electron Gas at EuO-KTaO3 Interfaces.

With the help of the two-dimensional electron gas (2DEG) at the LaAlO3-SrTiO3 interface, spin and charge currents can be interconverted. However, the conversion efficiency has been strongly depressed by LaAlO3, which blocks spin transmission. It is therefore highly desired to explore 2DEGs sandwiched between ferromagnetic insulators that are transparent for magnons. By constructing epitaxial heterostructure with ferromagnetic EuO, which is conducting for spin current but insulating for electric current, and KTaO3, we successfully obtained the 2DEGs, which can receive thermally injected spin current directly from EuO and convert the spin current to charge current via inverse Edelstein effect of the interface. Strong dependence of the spin Seebeck coefficient on the layer thickness of EuO is further observed and the propagation length for non-equilibrium magnons in EuO has been determined. The present work demonstrates the great potential of the 2DEGs formed by ferromagnetic oxides for spin caloritronics.

Unusual Electric and Optical Tuning of KTaO3-Based Two-Dimensional Electron Gases with 5d Orbitals.

Controlling electronic processes in low-dimension electron systems is centrally important for both fundamental and applied researches. While most of the previous works focused on SrTiO3-based two-dimensional electron gases (2DEGs), here we report on a comprehensive investigation in this regard for amorphous-LaAlO3/KTaO3 2DEGs with the Fermi energy ranging from ∼13 meV to ∼488 meV. The most important observation is the dramatic variation of the Rashba spin-orbit coupling (SOC) as Fermi energy sweeps through 313 meV: The SOC effective field first jumps and then drops, leading to a cusp of ∼2.6 T. Above 313 meV, an additional species of mobile electrons emerges, with a 50-fold enhanced Hall mobility. A relationship between spin relaxation distance and the degree of band filling has been established in a wide range. It indicates that the maximal spin precession length is ∼70.1 nm and the maximal Rashba spin splitting energy is ∼30 meV. Both values are much larger than the previously reported ones. As evidenced by density functional theory calculation, these unusual phenomena are closely related to the distinct band structure of the 2DEGs composed of 5d electrons. The present work further deepens our understanding of perovskite conducting interfaces, particularly those composed of 5d transition-metal oxides.

Magnetic Anisotropy Controlled by Distinct Interfacial Lattice Distortions at the La1- xSr xCoO3/La2/3Sr1/3MnO3 Interfaces.

Interface engineering is an important approach leading to multifunctional artificial materials. Although most of the previous works focused on the effects of the rotation/tilting of interfacial oxygen octahedron on perovskite multilayers, here, we report on a new kind of lattice distortion characterized by an off-center shift of the Mn ions within the MnO6 oxygen octahedra at the interfaces of La1- xSr xCoO3/La2/3Sr1/3MnO3/La1- xSr xCoO3/LaAlO3 trilayers ( x = 0-1/3), which drives the initially perpendicularly aligned magnetic axis of the La2/3Sr1/3MnO3 (LSMO) film toward the in-plane direction, though the film is in a strongly compressive state. It is further found that the magnetic anisotropy considerably depends on the content of Sr in La1- xSr xCoO3, enhancing as x decreases. The maximal anisotropy constant at 10 K is +2.5 × 106 erg/cm3 for the trilayers with x = 0, whereas it is -1.5 × 105 erg/cm3 for a bare LSMO film on LaAlO3. On the basis of the analysis of X-ray absorption spectroscopy and the results of density functional theory calculations, we found that the off-center displacement of the Mn ions has caused a strong orbital reconstruction at interfaces, resulting in the anomalous spin orientation against magnetoelastic coupling.

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces.

Two-dimensional electron gases (2DEGs) at oxide interfaces, which provide unique playgrounds for emergent phenomena, have attracted increasing attention in recent years. While most of the previous works focused on the 2DEGs at LaAlO_{3}/SrTiO_{3} interfaces, here we report on a new kind of 2DEGs formed between a magnetic insulator EuO and a high-k perovskite KTaO_{3}. The 2DEGs are not only highly conducting, with a maximal Hall mobility of 111.6 cm^{2}/V s at 2 K, but also well spin polarized, showing strongly hysteretic magnetoresistance up to 25 K and well-defined anomalous Hall effect up to 70 K. Moreover, unambiguous correspondences between the hysteretic behaviors of 2DEGs and the EuO layer are captured, suggesting the proximity effect of the latter on the former. This is confirmed by the results of density-functional theory calculations: Through interlayer exchange, EuO drives the neighboring TaO_{2} layer into a ferromagnetic state. The present work opens new avenues for the exploration for high performance spin-polarized 2DEGs at oxide interfaces.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO3-based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO3 layer on a (001)-orientated KTaO3 substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO3. Metallic 2DEGs with a Hall mobility as high as ∼2150 cm2/(V s) and a sheet carrier density as low as 2 × 1012 cm-2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

High mobility 2-dimensional electron gas at LaAlO3/SrTiO3 interface prepared by spin coating chemical methods.

Highly mobile 2-dimensional electron gases (2DEGs) at the (001), (011) and (111)-oriented LaAlO3/SrTiO3 (LAO/STO) interfaces are obtained using spin coating chemical method, which is a gentle technique without plasma bombardment of the pulsed laser deposition. As revealed by x-ray diffraction spectrum and x-ray reflectivity analysis, the LAO over layer is epitaxially grown, and has a uniform thickness of ∼15 nm, ∼20 nm and ∼26 nm for (001), (011) and (111) orientations, respectively. The interfaces are well metallic down to 2 K. The carrier mobilities are ∼28 000 cm2 V-1 s-1, ∼22 000 cm2 V-1 s-1 and ∼8300 cm2 V-1 s-1 at 2 K for the (001), (011) and (111) LAO/STO interfaces, respectively, and ∼8 cm2 V-1 s-1, ∼4 cm2 V-1 s-1 and ∼4 cm2 V-1 s-1 at room temperature. The present work shows that the spin coating chemical method is a feasible approach to get high quality 2DEG at both the polar/non-polar and polar/polar interfaces.

A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping.

The mechanism of resistive switching in metal oxides is a widely studied topic with interest in both fundamental physics and the practical need to improve device characteristics for memory based applications. Various experimental approaches were employed to reveal the different aspects of resistive switching; however, there is still a debate on the switching mechanism due to the lack of nondestructive microscopic characterization tools to monitor the oxygen vacancies. In this study, a novel approach using photoluminescence (PL) mapping was developed to study switching dynamics in metal oxides. By monitoring the emission properties with a confocal PL system, information regarding the switching mechanism can be obtained. The nondestructive nature of this approach allowed us to make comparisons between different switching conditions and endurance cycles. SrTiO3 based switching devices were used in the study. The distribution of oxygen vacancies can be positioned by mapping the integrated intensity of oxygen vacancy emission on a transparent top electrode, and both interface switching and filament switching can be distinguished. Moreover, the endurance study revealed a sudden rise in the emission intensity correlated with the device failure, which indicates an abrupt increase in the localized density of oxygen vacancies that results in an irreversible set process for the conductive filament.

Whole-Genome Sequencing for Detecting Antimicrobial Resistance in Nontyphoidal Salmonella.

Laboratory-based in vitro antimicrobial susceptibility testing is the foundation for guiding anti-infective therapy and monitoring antimicrobial resistance trends. We used whole-genome sequencing (WGS) technology to identify known antimicrobial resistance determinants among strains of nontyphoidal Salmonella and correlated these with susceptibility phenotypes to evaluate the utility of WGS for antimicrobial resistance surveillance. Six hundred forty Salmonella of 43 different serotypes were selected from among retail meat and human clinical isolates that were tested for susceptibility to 14 antimicrobials using broth microdilution. The MIC for each drug was used to categorize isolates as susceptible or resistant based on Clinical and Laboratory Standards Institute clinical breakpoints or National Antimicrobial Resistance Monitoring System (NARMS) consensus interpretive criteria. Each isolate was subjected to whole-genome shotgun sequencing, and resistance genes were identified from assembled sequences. A total of 65 unique resistance genes, plus mutations in two structural resistance loci, were identified. There were more unique resistance genes (n = 59) in the 104 human isolates than in the 536 retail meat isolates (n = 36). Overall, resistance genotypes and phenotypes correlated in 99.0% of cases. Correlations approached 100% for most classes of antibiotics but were lower for aminoglycosides and beta-lactams. We report the first finding of extended-spectrum ß-lactamases (ESBLs) (blaCTX-M1 and blaSHV2a) in retail meat isolates of Salmonella in the United States. Whole-genome sequencing is an effective tool for predicting antibiotic resistance in nontyphoidal Salmonella, although the use of more appropriate surveillance breakpoints and increased knowledge of new resistance alleles will further improve correlations.

WGS accurately predicts antimicrobial resistance in Escherichia coli.

OBJECTIVES: The objective of this study was to determine the effectiveness of WGS in identifying resistance genotypes of MDR Escherichia coli and whether these correlate with observed phenotypes. METHODS: Seventy-six E. coli strains were isolated from farm cattle and measured for phenotypic resistance to 15 antimicrobials with the Sensititre(®) system. Isolates with resistance to at least four antimicrobials in three classes were selected for WGS using an Illumina MiSeq. Genotypic analysis was conducted with in-house Perl scripts using BLAST analysis to identify known genes and mutations associated with clinical resistance. RESULTS: Over 30 resistance genes and a number of resistance mutations were identified among the E. coli isolates. Resistance genotypes correlated with 97.8% specificity and 99.6% sensitivity to the identified phenotypes. The majority of discordant results were attributable to the aminoglycoside streptomycin, whereas there was a perfect genotype-phenotype correlation for most antibiotic classes such as tetracyclines, quinolones and phenicols. WGS also revealed information about rare resistance mechanisms, such as structural mutations in chromosomal copies of ampC conferring third-generation cephalosporin resistance. CONCLUSIONS: WGS can provide comprehensive resistance genotypes and is capable of accurately predicting resistance phenotypes, making it a valuable tool for surveillance. Moreover, the data presented here showing the ability to accurately predict resistance suggest that WGS may be used as a screening tool in selecting anti-infective therapy, especially as costs drop and methods improve.