Potassium ion recognition by 15-crown-5 functionalized CdSe/ZnS quantum dots in H2O.

Based on 15-crown-5 functionalized CdSe/ZnS quantum dots (QDs), we report a novel fluorogenic sensor to probe K+ ions in H2O; recognition of K+ can be achieved via the Förster type of energy transfer between two different color QDs, so that [K+] of the order of 10(-6) M can be promptly detected.

Spectroscopy and femtosecond dynamics of type-II CdTe/CdSe core-shell quantum dots.

Syntheses of CdTe/CdSe type-II quantum dots (QDs) using CdO and CdCl2 as precursors for core and shell, respectively, are reported. Characterization was made via near-IR interband emission, transmission electron microscopy (TEM), energy dispersive spectroscopy (EDX), and X-ray diffraction (XRD). Femtosecond fluorescence upconversion measurements on the relaxation dynamics of the CdTe core (in CdTe/CdSe) emission and CdTe/CdSe interband emission reveal that as the size of the core increases from 5.3, 6.1 to 6.9 nm, the rate of photoinduced electron separation decreases from 1.96, 1.44 to 1.07 x10(12) s(-1). The finite rates of the initial charge separation are tentatively rationalized by the small electron-phonon coupling, causing weak coupling between the initial and charge-separated states.

Type-II CdSe/CdTe/ZnTe (core-shell-shell) quantum dots with cascade band edges: the separation of electron (at CdSe) and hole (at ZnTe) by the CdTe layer.

The rational design and synthesis of CdSe/CdTe/ZnTe (core-shell-shell) type-II quantum dots are reported. Their photophysical properties are investigated via the interband CdSe-->ZnTe emission and its associated relaxation dynamics. In comparison to the strong CdSe (core only) emission (lambda(max) approximately 550 nm, Phi(f) approximately 0.28), a moderate CdSe-->CdTe emission (lambda(max) approximately 1026 nm, Phi(f) approximately 1.2 x 10(-3)) and rather weak CdSe-->ZnTe interband emission (lambda(max) approximately 1415 nm, Phi(f) approximately 1.1 x 10(-5)) are resolved for the CdSe/CdTe/ZnTe structure (3.4/1.8/1.3 nm). Capping CdSe/CdTe with ZnTe results in a distant electron-hole separation between CdSe (electron) and ZnTe (hole) via an intermediate CdTe layer. In the case of the CdSe/CdTe/ZnTe structure, a lifetime as long as 150 ns is observed for the CdSe-->ZnTe (1415 nm) emission. This result further indicates an enormously long radiative lifetime of approximately 10 ms. Upon excitation of the CdSe/CdTe/ZnTe structure, the long-lived charge separation may further serve as an excellent hole carrier for catalyzing the redox oxidation reaction.