SPRED2 promotes autophagy and attenuates inflammatory response in IL-1ß induced osteoarthritis chondrocytes via regulating the p38 MAPK signaling pathway.

Osteoarthritis (OA) is an age-related degenerative disease primarily characterized by articular cartilage degeneration. Many inflammatory mediators are upregulated in OA patients. Mitogen-activated protein kinase (MAPK) and nuclear factor-κB (NF-κB) pathways play a role in the regulation of inflammatory response. Autophagy appears to exhibit a protective mechanism, and alleviate the symptoms of OA in rats. Dysregulation of SPRED2 is associated with various diseases involving inflammatory response. However, the role of SPRED2 in OA development remains to be investigated. The present work demonstrated that SPRED2 promoted autophagy and attenuated inflammatory response in IL-1ß induced osteoarthritis chondrocytes via regulating the p38 MAPK signaling pathway. SPRED2 was downregulated in human knee cartilage tissues of OA patients and in IL-1ß-induced chondrocytes. SPRED2 enhanced chondrocyte proliferation and prevented cell apoptosis induced by IL-1ß. SPRED2 prevented IL-1ß-induced chondrocytes autophagy and inflammatory response in chondrocytes. SPRED2 inhibited the activation of p38 MAPK signaling pathway and ameliorated OA injury of cartilage. Thus, SPRED2 promoted autophagy and inhibited inflammatory response by regulation of p38 MAPK signaling pathway in vivo.

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method.

Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Temperature-dependent Raman measurements showed that the Raman shift and the full width at half maximum (FWHM) of the E2 (high) phonon mode of the m-plane AlN crystal were larger than those of the c-plane AlN crystal, which would be correlated with the residual stress and defects in the AlN samples, respectively. Moreover, the phonon lifetime of the Raman-active modes largely decayed and its line width gradually broadened with the increase in temperature. The phonon lifetime of the Raman TO-phonon mode was changed less than that of the LO-phonon mode with temperature in the two crystals. It should be noted that the influence of inhomogeneous impurity phonon scattering on the phonon lifetime and the contribution to the Raman shift came from thermal expansion at a higher temperature. In addition, the trend of stress with increasing 1000/temperature was similar for the two AlN samples. As the temperature increased from 80 K to ~870 K, there was a temperature at which the biaxial stress of the samples transformed from compressive to tensile stress, while their certain temperature was different.

Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors.

The existence of defects and traps in a transistor plays an adverse role on efficient charge transport. In response to this challenge, extensive research has been conducted on semiconductor crystalline materials in the past decades. However, the development of dielectric crystals for transistors is still in its infancy due to the lack of appropriate dielectric crystalline materials and, most importantly, the crystal morphology required by the gate dielectric layer, which is also crucial for the construction of high-performance transistor as it can greatly improve the interfacial quality of carrier transport path. Here, a new type of dielectric crystal of hexagonal aluminum nitride (AlN) with the desired 2D morphology of combing thin thickness with large lateral dimension is synthesized. Such a suitable morphology in combination with the outstanding dielectric properties of AlN makes it promising as a gate dielectric for transistors. Furthermore, ultrathin 2,6-diphenylanthracene molecular crystals with only a few molecular layers can be prepared on AlN crystal via van der Waals epitaxy. As a result, this all-crystalline system incorporating dielectric and semiconductor crystals greatly enhances the overall performance of a transistor, indicating the importance of minimizing defects and preparing high-quality semiconductor/dielectric interface in a transistor configuration.

Synthesis of Large-Scale Single-Crystalline Monolayer WS2 Using a Semi-Sealed Method.

As a two-dimensional semiconductor, WS2 has attracted great attention due to its rich physical properties and potential applications. However, it is still difficult to synthesize monolayer single-crystalline WS2 at larger scale. Here, we report the growth of large-scale triangular single-crystalline WS2 with a semi-sealed installation by chemical vapor deposition (CVD). Through this method, triangular single-crystalline WS2 with an average length of more than 300 µm was obtained. The largest one was about 405 µm in length. WS2 triangles with different sizes and thicknesses were analyzed by optical microscope and atomic force microscope (AFM). Their optical properties were evaluated by Raman and photoluminescence (PL) spectra. This report paves the way to fabricating large-scale single-crystalline monolayer WS2, which is useful for the growth of high-quality WS2 and its potential applications in the future.

Synthesis of Vertically Standing MoS2 Triangles on SiC.

Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.