Colossal anisotropic absorption of spin currents induced by chirality.

The chiral induced spin selectivity (CISS) effect, in which the structural chirality of a material determines the preference for the transmission of electrons with one spin orientation over that of the other, is emerging as a design principle for creating next-generation spintronic devices. CISS implies that the spin preference of chiral structures persists upon injection of pure spin currents and can act as a spin analyzer without the need for a ferromagnet. Here, we report an anomalous spin current absorption in chiral metal oxides that manifests a colossal anisotropic nonlocal Gilbert damping with a maximum-to-minimum ratio of up to 1000%. A twofold symmetry of the damping is shown to result from differential spin transmission and backscattering that arise from chirality-induced spin splitting along the chiral axis. These studies reveal the rich interplay of chirality and spin dynamics and identify how chiral materials can be implemented to direct the transport of spin current.

Anisotropic Nonlocal Damping in Ferromagnet/α-GeTe Bilayers Enabled by Splitting Energy Bands.

The understanding and manipulation of anisotropic Gilbert damping is crucial for both fundamental research and versatile engineering and optimization. Although several works on anisotropic damping have been reported, no direct relationship between the band structure and anisotropic damping was established. Here, we observed an anisotropic damping in Fe/GeTe manipulated by the symmetric band structures of GeTe via angle-resolved photoemission spectroscopy. Moreover, the anisotropic damping can be modified by the symmetry of band structures. Our Letter provides insightful understandings of the anisotropic Gilbert damping in ferromagnets interfaced with Rashba semiconductors and suggests the possibility of manipulating the Gilbert damping by band engineering.

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction.

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low-Dimensional Topological Insulator Superlattices.

Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi2 Se3 -(Bi2 /Bi2 Se3 )N with limited stacking layer number N are constructed. Angle-resolved photoelectron emission spectra of the TSLs identify the coexistence and adjustment of dual topological surface states on Bi2 Se3 facet. The existence and tunability of spin-polarized dual-topological bands with N on Bi2 Se3 facet result in an unconventionally weak antilocalization effect (WAL) with variable WAL coefficient α (maximum close to 3/2) from quantum transport experiments. Most importantly, it is identified that the spin-polarized surface electrons from dual topological bands exhibit circularly and linearly polarized photogalvanic effect (CPGE and LPGE). It is anticipated that the stacked dual-topology and stacking layer number controlled bands evolution provide a platform for realizing intrinsic CPGE and LPGE. The results show that the surface electronic structure of the dual TSLs is highly tunable and well-regulated for quantum transport and photoexcitation, which shed light on engineering for opto-electronic/spintronic applications.

Drag effect induced large anisotropic damping behavior in magnetic thin films with strong magnetic anisotropy.

The determination of intrinsic Gilbert damping is one of the central interests in the field of spintronics. However, some external factors in magnetic films tend to play a remarkable role in the magnetization dynamics. Here, we present a comprehensive study of the magnetic relaxation in ferromagnetic films with various in-plane magnetic anisotropy via ferromagnetic resonance technique. We find that the magnetic drag effect can result in the resonant linewidth broadening and the nonlinear dependence of linewidth on frequency stemming from field-magnetization misalignment. As a result, this could lead to the imprecise extraction of the key dynamic parameter-Gilbert damping and cause the confusing behaviors of ultra-low and anisotropic damping in thin films and multi-layers with high magnetic anisotropy. Our results provide a crucial way for the accurately quantitative estimation of the Gilbert damping in spintronics measurements.

Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe.

Nonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin-orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

Visualizing Tailored Spin Phenomena in a Reduced-Dimensional Topological Superlattice.

Emergent topological insulators (TIs) and their design are in high demand for manipulating and transmitting spin information toward ultralow-power-consumption spintronic applications. Here, distinct topological states with tailored spin properties can be achieved in a single reduced-dimensional TI-superlattice, (Bi2 /Bi2 Se3 )-(Bi2 /Bi2 Se3 )N or (□/Bi2 Se3 )-(Bi2 /Bi2 Se3 )N (N is the repeating unit, □ represents an empty layer) by controlling the termination via molecular beam epitaxy. The Bi2 -terminated superlattice exhibits a single Dirac cone with a spin momentum splitting ≈0.5 Å-1 , producing a pronounced inverse Edelstein effect with a coherence length up to 1.26 nm. In contrast, the Bi2 Se3 -terminated superlattice is identified as a dual TI protected by coexisting time reversal and mirror symmetries, showing an unexpectedly long spin lifetime up to 1 ns. The work elucidates the key role of dimensionality and dual topological phases in selecting desired spin properties, suggesting a promise route for engineering topological superlattices for high-performance TI-spintronic devices.

Characterizing the Magnetic Interfacial Coupling of the Fe/FeGe Heterostructure by Ferromagnetic Resonance.

We characterize the magnetic interfacial coupling of the Fe/FeGe heterostructure and its influence on the magnetic damping via ferromagnetic resonance in the temperature range of 200-300 K. When the temperature is below the critical temperature of FeGe, the interfacial coupling rises. The strength of the magnetic interfacial coupling is determined as a function of the temperature and reaches up to 0.194 erg/cm2 at 200 K. Meanwhile, the Gilbert damping of the Fe layer is enhanced from 0.035 at 300 K to 0.050 at 200 K. The enhancement is linearly proportional to the strength of magnetic interfacial coupling. We attribute the enhancement to the interfacial coupling that transfers spin angular momentum from Fe to FeGe via the exchange interaction. Our results reveal that the interfacial coupling is an effective approach to inject spin current into the chiral spin texture.

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures.

Topological insulators (TIs) have emerged as some of the most efficient spin-to-charge convertors because of their correlated spin-momentum locking at helical Dirac surface states. While endeavors have been made to pursue large "charge-to-spin" conversions in novel TI materials using spin-torque-transfer geometries, the reciprocal process "spin-to-charge" conversion, characterized by the inverse Edelstein effect length (λIEE) in the prototypical TI material (Bi2Se3), remains moderate. Here, we demonstrate that, by incorporating a "second" spin-splitting band, namely, a Rashba interface formed by inserting a bismuth interlayer between the ferromagnet and the Bi2Se3 (i.e., ferromagnet/Bi/Bi2Se3 heterostructure), λIEE shows a pronounced increase (up to 280 pm) compared with that in pure TIs. We found that λIEE alters as a function of bismuth interlayer thickness, suggesting a new degree of freedom to manipulate λIEE by engineering the interplay of Rashba and Dirac surface states. Our finding launches a new route for designing TI- and Rashba-type quantum materials for next-generation spintronic applications.

The indispensable role of the transversal spin fluctuations mechanism in laser-induced demagnetization of Co/Pt multilayers with nanoscale magnetic domains.

The switching of magnetic domains induced by an ultrashort laser pulse has been demonstrated in nanostructured ferromagnetic films. This leads to the dawn of a new era in breaking the ultimate physical limit for the speed of magnetic switching and manipulation, which is relevant to current and future information storage. However, our understanding of the interactions between light and spins in magnetic heterostructures with nanoscale domain structures is still lacking. Here, both time-resolved magneto-optical Kerr effect experiments and atomistic simulations are carried out to investigate the dominant mechanism of laser-induced ultrafast demagnetization in [Co/Pt]20 multilayers with nanoscale magnetic domains. It is found that the ultrafast demagnetization time remains constant with various magnetic configurations, indicating that the domain structures play a minor role in laser-induced ultrafast demagnetization. In addition, both in experiment and atomistic simulations, we find a dependence of ultrafast demagnetization time τ M on the laser fluence, which is in contrast to the observations of spin transport within magnetic domains. The remarkable agreement between experiment and atomistic simulations indicates that the local dissipation of spin angular momentum is the dominant demagnetization mechanism in this system. More interestingly, we made a comparison between the atomistic spin dynamic simulation and the longitudinal spin flip model, highlighting that the transversal spin fluctuations mechanism is responsible for the ultrafast demagnetization in the case of inhomogeneous magnetic structures. This is a significant advance in clarifying the microscopic mechanism underlying the process of ultrafast demagnetization in inhomogeneous magnetic structures.

Design and Comparative Study of O3/P2 Hybrid Structures for Room Temperature Sodium-Ion Batteries.

Rechargeable sodium-ion batteries have drawn increasing attention as candidates for the post lithium-ion batteries in large-scale energy storage systems. Layered oxides are the most promising cathode materials and their pure phases (e.g., P2, O3) have been widely investigated. Here we report a series of cathode materials with O3/P2 hybrid phase for sodium-ion batteries, which possesses advantages of both P2 and O3 structures. The designed material, Na0.78Ni0.2Fe0.38Mn0.42O2, can deliver a capacity of 86 mAh g-1 with great rate capability and cycling performance. 66% capacity is still maintained when the current rate reaches as high as 10C, and the capacity retention is 90% after 1500 cycles. Moreover, in situ XRD was performed to examine the structure change during electrochemical testing in different voltage ranges, and the results demonstrate 4 V as the optimized upper voltage limit, with which smaller polarization, better structural stability, and better cycling performance are achieved. The results obtained here provide new insights in designing cathode materials with optimal structure and improved performance for sodium-ion batteries.

Criticality-Enhanced Magnetocaloric Effect in Quantum Spin Chain Material Copper Nitrate.

In this work, a systematic study of Cu(NO3)2·2.5 H2O (copper nitrate hemipentahydrate, CN), an alternating Heisenberg antiferromagnetic chain model material, is performed with multi-technique approach including thermal tensor network (TTN) simulations, first-principles calculations, as well as magnetization measurements. Employing a cutting-edge TTN method developed in the present work, we verify the couplings J = 5.13 K, α = 0.23(1) and Landé factors g∥= 2.31, g⊥ = 2.14 in CN, with which the magnetothermal properties have been fitted strikingly well. Based on first-principles calculations, we reveal explicitly the spin chain scenario in CN by displaying the calculated electron density distributions, from which the distinct superexchange paths are visualized. On top of that, we investigated the magnetocaloric effect (MCE) in CN by calculating its isentropes and magnetic Grüneisen parameter. Prominent quantum criticality-enhanced MCE was uncovered near both critical fields of intermediate strengths as 2.87 and 4.08 T, respectively. We propose that CN is potentially a very promising quantum critical coolant.

Anisotropic magnetic entropy change in RFeO3 single crystals (R = Tb, Tm, or Y).

Compared with traditional gas-compression/expansion refrigeration, magnetic refrigeration based on magnetocaloric effect (MCE) exhibits the advantages of high energy efficiency and environment friendliness. Here, we created large MCE in RFeO3 (R = Tb or Tm) single crystals by the magnetization vector rotation of single crystal with strong magnetocrystalline anisotropy (MCA), rather than merely via the order-disorder magnetic phase transition or magnetic structural transition. Owing to the difference in charge distribution of 4f-electrons between Tb(3+) and Tm(3+) ions, the rotating field entropy with different signs, -ΔSM(R) = 17.42 J/kg K, and -ΔSM(R) = -9.01 J/kg K are achieved at 9 K and 17 K for TbFeO3 and TmFeO3 single crystals from b axis to c axis, at 50 kOe, respectively. The finding of the large anisotropic MCE not only advances our understanding of the anisotropy of MCE, but also extends the application for single crystals to magnetic refrigeration.

Determination of magnetic anisotropy constants and domain wall pinning energy of Fe/MgO(001) ultrathin film by anisotropic magnetoresistance.

It is challenging to determine domain wall pinning energy and magnetic anisotropy since both coherent rotation and domain wall displacement coexist during magnetization switching process. Here, angular dependence anisotropic magnetoresistance (AMR) measurements at different magnetic fields were employed to determine magnetic anisotropy constants and domain wall pinning energy of Fe/MgO(001) ultrathin film. The AMR curves at magnetic fields which are high enough to ensure the coherent rotation of magnetization indicate a smooth behavior without hysteresis between clockwise (CW) and counter-clockwise (CCW) rotations. By analyzing magnetic torque, the magnetic anisotropy constants can be obtained. On the other hand, the AMR curves at low fields show abrupt transitions with hysteresis between CW and CCW rotations, suggesting the presence of multi-domain structures. The domain wall pinning energy can be obtained by analyzing different behaviors of AMR. Our work suggests that AMR measurements can be employed to figure out precisely the contributions of magnetic anisotropy and domain wall pinning energy, which is still a critical issue for spintronics.

Exceeding natural resonance frequency limit of monodisperse Fe(3)O(4) nanoparticles via superparamagnetic relaxation.

Magnetic nanoparticles have attracted much research interest in the past decades due to their potential applications in microwave devices. Here, we adopted a novel technique to tune cut-off frequency exceeding the natural resonance frequency limit of monodisperse Fe3O4 nanoparticles via superparamagnetic relaxation. We observed that the cut-off frequency can be enhanced from 5.3 GHz for Fe3O4 to 6.9 GHz forFe3O4@SiO2 core-shell structure superparamagnetic nanoparticles, which are much higher than the natural resonance frequency of 1.3 GHz for Fe3O4 bulk material. This finding not only provides us a new approach to enhance the resonance frequency beyond the Snoek's limit, but also extend the application for superparamagnetic nanoparticles to microwave devices.

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Determination of magnetic anisotropy constants in Fe ultrathin film on vicinal Si(111) by anisotropic magnetoresistance.

The epitaxial growth of ultrathin Fe film on Si(111) surface provides an excellent opportunity to investigate the contribution of magnetic anisotropy to magnetic behavior. Here, we present the anisotropic magnetoresistance (AMR) effect of Fe single crystal film on vicinal Si(111) substrate with atomically flat ultrathin p(2 × 2) iron silicide as buffer layer. Owing to the tiny misorientation from Fe(111) plane, the symmetry of magnetocrystalline anisotropy energy changes from the six-fold to a superposition of six-fold, four-fold and a weakly uniaxial contribution. Furthermore, the magnitudes of various magnetic anisotropy constants were derived from torque curves on the basis of AMR results. Our work suggests that AMR measurements can be employed to figure out precisely the contributions of various magnetic anisotropy constants.

Integrating giant microwave absorption with magnetic refrigeration in one multifunctional intermetallic compound of LaFe(11.6)Si(1.4)C(0.2)H(1.7).

Both microwave absorption and magnetocaloric effect (MCE) are two essential performances of magnetic materials. We observe that LaFe(11.6)Si(1.4)C(0.2)H(1.7) intermetallic compound exhibits the advantages of both giant microwave absorption exceeding -42 dB and magnetic entropy change of -20 Jkg(-1)K(-1). The excellent electromagnetic wave absorption results from the large magnetic loss and dielectric loss as well as the efficient complementarity between relative permittivity and permeability. The giant MCE effect in this material provides an ideal technique for cooling the MAMs to avoid temperature increase and infrared radiation during microwave absorption. Our finding suggests that we can integrate the giant microwave absorption with magnetic refrigeration in one multifunctional material. This integration not only advances our understanding of the correlation between microwave absorption and MCE, but also can open a new avenue to exploit microwave devices and electromagnetic stealth.

Tuning magnetic anisotropies of Fe films on Si(111) substrate via direction variation of heating current.

We adopted a novel method to tune the terrace width of Si(111) substrate by varying the direction of heating current. It was observed that the uniaxial magnetic anisotropy (UMA) of Fe films grown on the Si(111) substrate enhanced with decreasing the terrace width and superimposed on the weak six-fold magnetocrystalline anisotropy. Furthermore, on the basis of the scanning tunneling microscopy (STM) images, self-correlation function calculations confirmed that the UMA was attributed mainly from the long-range dipolar interaction between the spins on the surface. Our work opens a new avenue to manipulate the magnetic anisotropy of magnetic structures on the stepped substrate by the decoration of its atomic steps.