Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport.

Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here, the spin-QLEDs enabled by 2D chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer are reported. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, is discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (gCP-EL ) achieves up to 1.6 × 10-2 . Consequently, this work opens up a new and effective approach for high-performance spin-LEDs.

Monolithic multi-wavelength lasing from multi-sized microdisk lasers.

This paper demonstrates monolithic multi-wavelength lasing through fabrication of multi-sized microdisks on a green-emitting thin film sample. The different dimensions of the microdisks incur different extent of strain relaxation, thus changing the emission/gain spectra due to the reduction of the quantum confined Stark effect. Under room-temperature optical pumping, lasing thresholds of 15.1 mJ/cm2, 2.9 mJ/cm2, and 5.3 mJ/cm2 with Q factors of 2370, 2060, and 4308 are realized, respectively, for fabricated microdisks with diameters of 950 nm, 6 µm, and 10 µm. By exciting the microdisks with a pump laser spot diameter of 2 mm, simultaneous multi-wavelength lasing action is thus observed. The strain relaxation effect is confirmed by the shift of the E2 (high) Raman peak from 563.2 cm-1 to 561.5 cm-1 as the diameter of the fabricated microdisk reduces.

Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-defined nanopillars.

Chip-scale red, green and blue (RGB) light emission on an InGaN/GaN multi-quantum well wafer adopting a top-down fabrication approach is demonstrated in this study, facilitated by shadow-masked nanosphere lithography for precise site-controlled nano-patterning. Exploiting the strain relaxation mechanism by fabricating arrays of nanosphere-defined nanopillars of two different dimensions utilizing a sequential shadow-masked nanosphere coating approach into the blue and green light-emitting pixel regions on a red-light emitting InGaN/GaN wafer, RGB light emission from a monolithic chip is demonstrated. The micro-sized RGB light-emitting pixels emit at 645 nm-680 nm, 510 nm-521 nm and 475 nm-498 nm respectively, achieving a maximum color gamut of 60% NTSC and 72% sRGB. Dimensional fluctuations of the nanopillars of 73% and 71% for the green and blue light-emitting pixels, respectively, are estimated from scanning electron microscope images of the fabricated device, corresponding to fluctuations in spectral blue-shifts of 5.4 nm and 21.2 nm as estimated by strain-coupledk·pSchrödinger calculations, consistent with observations from micro-photoluminescence (µ-PL) mapping which shows deviations of emission wavelengths for the RGB light-emitting pixels to be 8.9 nm, 14.9 nm and 23.7 nm, respectively. The RGB pixels are also configured in a matrix-addressable configuration to form an RGB microdisplay, demonstrating the feasibility of the approach towards chip-scale color displays.

Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks.

Optically pumped whispering-gallery mode (WGM) lasing is observed from a thin-film GaN microdisk processed from GaN-on-Si InGaN/GaN multi-quantum well wafers by selective wet-etch removal of the substrate. Compared with thin-film microdisks processed from GaN-on-sapphire wafers through laser lift-off of the sapphire substrate, the exposed surface is significantly smoother as laser-induced damage is avoided, with a root-mean-square roughness of 1.3 nm compared with 5.8 nm of the latter wafer. The ∼8-µm diameter microdisks, fabricated by pattern transfer from a silica microsphere and dry etching, benefit from the surface smoothness to offer superior optical confinement within the cavity. WGM lasing thresholds of ∼2.9 mJ/cm2 and ∼3.5 mJ/cm2 with quality (Q)-factors of ∼3100 and ∼1700 are observed at the peak lasing wavelengths of ∼453 nm and ∼532 nm, respectively, which are significantly better than thin-film microdisks processed from GaN-on-sapphire wafers despite lower internal quantum efficiency, highlighting the importance of surface smoothness in such optical cavities.

GaN microdisk with direct coupled waveguide for unidirectional whispering-gallery mode emission.

Microdisks are excellent whispering-gallery mode (WGM) optical resonators, but their emissions are invariably in-plane isotropic due to their circularities and thus difficult to be extracted efficiently. In this work, a waveguide with a width of 0.16 µm directly coupled to a microdisk with a diameter of 10 µm is fabricated on a 0.77 µm thick GaN thin film containing InGaN/GaN multi-quantum wells. This eliminates the need for precision patterning required by evanescent coupling schemes in which coupling gaps of the order of tens of nanometers must be maintained. The fabrication was carried out using nanosphere and nanowire lithography. Non-evanescent coupling of WGMs to the waveguide from the microdisk is successfully demonstrated.