Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors.

Nitride materials feature strong chemical bonding character that leads to unique crystal structures, but many ternary nitride chemical spaces remain experimentally unexplored. The search for previously undiscovered ternary nitrides is also an opportunity to explore unique materials properties, such as transitions between cation-ordered and -disordered structures, as well as to identify candidate materials for optoelectronic applications. Here, we present a comprehensive experimental study of MgSnN2, an emerging II-IV-N2 compound, for the first time mapping phase composition and crystal structure, and examining its optoelectronic properties computationally and experimentally. We demonstrate combinatorial cosputtering of cation-disordered, wurtzite-type MgSnN2 across a range of cation compositions and temperatures, as well as the unexpected formation of a secondary, rocksalt-type phase of MgSnN2 at Mg-rich compositions and low temperatures. A computational structure search shows that the rocksalt-type phase is substantially metastable (>70 meV/atom) compared to the wurtzite-type ground state. Spectroscopic ellipsometry reveals optical absorption onsets around 2 eV, consistent with band gap tuning via cation disorder. Finally, we demonstrate epitaxial growth of a mixed wurtzite-rocksalt MgSnN2 on GaN, highlighting an opportunity for polymorphic control via epitaxy. Collectively, these findings lay the groundwork for further exploration of MgSnN2 as a model ternary nitride, with controlled polymorphism, and for device applications, enabled by control of optoelectronic properties via cation ordering.

Carrier lifetimes of >1 µs in Sn-Pb perovskites enable efficient all-perovskite tandem solar cells.

All-perovskite-based polycrystalline thin-film tandem solar cells have the potential to deliver efficiencies of >30%. However, the performance of all-perovskite-based tandem devices has been limited by the lack of high-efficiency, low-band gap tin-lead (Sn-Pb) mixed-perovskite solar cells (PSCs). We found that the addition of guanidinium thiocyanate (GuaSCN) resulted in marked improvements in the structural and optoelectronic properties of Sn-Pb mixed, low-band gap (~1.25 electron volt) perovskite films. The films have defect densities that are lower by a factor of 10, leading to carrier lifetimes of greater than 1 microsecond and diffusion lengths of 2.5 micrometers. These improved properties enable our demonstration of >20% efficient low-band gap PSCs. When combined with wider-band gap PSCs, we achieve 25% efficient four-terminal and 23.1% efficient two-terminal all-perovskite-based polycrystalline thin-film tandem solar cells.

Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy.

We present an impedance technique based on light intensity-modulated high-frequency resistivity (IMHFR) that provides a new way to elucidate both the thermodynamics and kinetics in complex semiconductor photoelectrodes. We apply IMHFR to probe electrode interfacial energetics on oxide-modified semiconductor surfaces frequently used to improve the stability and efficiency of photoelectrochemical water splitting systems. Combined with current density-voltage measurements, the technique quantifies the overpotential for proton reduction relative to its thermodynamic potential in Si photocathodes coated with three oxides (SiOx, TiO2, and Al2O3) and a Pt catalyst. In pH 7 electrolyte, the flatband potentials of TiO2- and Al2O3-coated Si electrodes are negative relative to samples with native SiOx, indicating that SiOx is a better protective layer against oxidative electrochemical corrosion than ALD-deposited crystalline TiO2 or Al2O3. Adding a Pt catalyst to SiOx/Si minimizes proton reduction overpotential losses but at the expense of a reduction in available energy characterized by a more negative flatband potential relative to catalyst-free SiOx/Si.

Understanding and Control of Bipolar Self-Doping in Copper Nitride.

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with an electron density of 1017 cm-3 for low growth temperature (≈ 35 °C) and p-type with a hole density between 1015 cm-3 and 1016 cm-3 for elevated growth temperatures (50 °C to 120 °C). Mobility for both types of Cu3N was ≈ 0.1 cm2/Vs to 1 cm2/V. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N while Cui defects form preferentially in n-type Cu3N; suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general.

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for these studies, since even simple binary non-ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here, we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed ii/iv valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of metastable materials. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.

Effect of halide-modified model carbon supports on catalyst stability.

Modification of physiochemical and structural properties of carbon-based materials through targeted functionalization is a useful way to improve the properties and performance of such catalyst materials. This work explores the incorporation of dopants, including nitrogen, iodine, and fluorine, into the carbon structure of highly-oriented pyrolytic graphite (HOPG) and its potential benefits on the stability of PtRu catalyst nanoparticles. Evaluation of the changes in the catalyst nanoparticle coverage and size as a function of implantation parameters reveals that carbon supports functionalized with a combination of nitrogen and fluorine provide the most beneficial interactions, resulting in suppressed particle coarsening and dissolution. Benefits of a carefully tuned support system modified with fluorine and nitrogen surpass those obtained with nitrogen (no fluorine) modification. Ion implantation of iodine into HOPG results in a consistent amount of structural damage to the carbon matrix, regardless of dose. For this modification, improvements in stability are similar to nitrogen modification; however, the benefit is only observed at higher dose conditions. This indicates that a mechanism different than the one associated with nitrogen may be responsible for the improved durability.

Supported ru-pt bimetallic nanoparticle catalysts prepared by atomic layer deposition.

Atomic layer deposition (ALD) is used to deposit ruthenium-platinum nanostructured catalysts using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium, trimethyl(methylcyclopentadienyl) platinum, and oxygen as precursors. Transmission electron microscopy shows discrete 1.2 nm nanoparticles decorating the surface of the spherical alumina support. The Ru-Pt particles are crystalline and have a crystal structure similar to pure platinum. X-ray fluorescence measurements show that the nanoparticle composition is controlled by the ratio of metal precursor ALD cycles. X-ray absorption spectroscopy at the Ru K-edge indicates a nearest neighbor Ru-Pt interaction consistent with a bimetallic composition. Methanol decomposition reactions further confirm a Ru-Pt interaction and show enhanced methanol conversion for the bimetallic nanoparticles when compared to catalysts comprised of a mixture of pure Pt and Ru nanoparticles of similar loading. These results demonstrate that ALD is a viable technique for synthesizing mixed-metal nanostructures suitable for catalysis and other applications.

Controlled growth of platinum nanoparticles on strontium titanate nanocubes by atomic layer deposition.

With an eye toward using surface morphology to enhance heterogeneous catalysis, Pt nanoparticles are grown by atomic layer deposition (ALD) on the surfaces of SrTiO(3) nanocubes. The size, dispersion, and chemical state of the Pt nanoparticles are controlled by the number of ALD growth cycles. The SrTiO(3) nanocubes average 60 nm on a side with {001} faces. The Pt loading increases linearly with Pt ALD cycles to a value of 1.1 x 10(-6) g cm(-2) after five cycles. Scanning electron microscopy images reveal discrete, well-dispersed Pt nanoparticles. Small- and wide-angle X-ray scattering show that the Pt nanoparticle spacing and size increase as the number of ALD cycles increases. X-ray absorption spectroscopy shows a progression from platinum(II) oxide to metallic platinum and a decrease in Pt--O bonding with an increase in Pt--Pt bonding as the number of ALD cycles increases.

Imaging of atomic layer deposited (ALD) tungsten monolayers on alpha-TiO2(110) by X-ray standing wave Fourier inversion.

A single atomic layer of tungsten grown by atomic layer deposition (ALD) on a single-crystal rutile TiO2(110) support is studied by the X-ray standing wave (XSW) technique. The surface structural and chemical properties were also examined using atomic force microscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. The XSW measured set of hkl Fourier components for the W atomic distribution function are summed together to produce a model-independent 3D map of the W atoms relative to the rutile lattice. The 3D atomic image shows surface tungsten atoms equally occupying the two nonequivalent Ti sites with a slight outward displacement. This corresponds to the atop and bridge sites with respect to the underlying lattice oxygen atoms. These XSW measurements clearly show that ALD conformal layers can be highly coherent with respect to the substrate lattice.