An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.

A nonlinear system, exhibiting a unique asymptotic behaviour, while being continuously subject to a stimulus from a certain class, is said to suffer from fading memory. This interesting phenomenon was first uncovered in a non-volatile tantalum oxide-based memristor from Hewlett Packard Labs back in 2016 out of a deep numerical investigation of a predictive mathematical description, known as the Strachan model, later corroborated by experimental validation. It was then found out that fading memory is ubiquitous in non-volatile resistance switching memories. A nonlinear system may however also exhibit a local form of fading memory, in case, under an excitation from a given family, it may approach one of a number of distinct attractors, depending upon the initial condition. A recent bifurcation study of the Strachan model revealed how, under specific train stimuli, composed of two square pulses of opposite polarity per cycle, the simplest form of local fading memory affects the transient dynamics of the aforementioned Resistive Random Access Memory cell, which, would asymptotically act as a bistable oscillator. In this manuscript we propose an analytical methodology, based on the application of analysis tools from Nonlinear System Theory to the Strachan model, to craft the properties of a generalised pulse train stimulus in such a way to induce the emergence of complex local fading memory effects in the nano-device, which would consequently display an interesting tuneable multistable oscillatory response, around desired resistance states. The last part of the manuscript discusses a case study, shedding light on a potential application of the local history erase effects, induced in the device via pulse train stimulation, for compensating the unwanted yet unavoidable drifts in its resistance state under power off conditions.

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.

Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.

DIANA: A deep learning-based paprika plant disease and pest phenotyping system with disease severity analysis.

The emergence of deep neural networks has allowed the development of fully automated and efficient diagnostic systems for plant disease and pest phenotyping. Although previous approaches have proven to be promising, they are limited, especially in real-life scenarios, to properly diagnose and characterize the problem. In this work, we propose a framework which besides recognizing and localizing various plant abnormalities also informs the user about the severity of the diseases infecting the plant. By taking a single image as input, our algorithm is able to generate detailed descriptive phrases (user-defined) that display the location, severity stage, and visual attributes of all the abnormalities that are present in the image. Our framework is composed of three main components. One of them is a detector that accurately and efficiently recognizes and localizes the abnormalities in plants by extracting region-based anomaly features using a deep neural network-based feature extractor. The second one is an encoder-decoder network that performs pixel-level analysis to generate abnormality-specific severity levels. Lastly is an integration unit which aggregates the information of these units and assigns unique IDs to all the detected anomaly instances, thus generating descriptive sentences describing the location, severity, and class of anomalies infecting plants. We discuss two possible ways of utilizing the abovementioned units in a single framework. We evaluate and analyze the efficacy of both approaches on newly constructed diverse paprika disease and pest recognition datasets, comprising six anomaly categories along with 11 different severity levels. Our algorithm achieves mean average precision of 91.7% for the abnormality detection task and a mean panoptic quality score of 70.78% for severity level prediction. Our algorithm provides a practical and cost-efficient solution to farmers that facilitates proper handling of crops.

Experimental validation of state equations and dynamic route maps for phase change memristive devices.

Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of Dynamic Route Map (DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state-dependent Ohm's law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices.

On the Thermal Models for Resistive Random Access Memory Circuit Simulation.

Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.

On Local Activity and Edge of Chaos in a NaMLab Memristor.

Local activity is the capability of a system to amplify infinitesimal fluctuations in energy. Complex phenomena, including the generation of action potentials in neuronal axon membranes, may never emerge in an open system unless some of its constitutive elements operate in a locally active regime. As a result, the recent discovery of solid-state volatile memory devices, which, biased through appropriate DC sources, may enter a local activity domain, and, most importantly, the associated stable yet excitable sub-domain, referred to as edge of chaos, which is where the seed of complexity is actually planted, is of great appeal to the neuromorphic engineering community. This paper applies fundamentals from the theory of local activity to an accurate model of a niobium oxide volatile resistance switching memory to derive the conditions necessary to bias the device in the local activity regime. This allows to partition the entire design parameter space into three domains, where the threshold switch is locally passive (LP), locally active but unstable, and both locally active and stable, respectively. The final part of the article is devoted to point out the extent by which the response of the volatile memristor to quasi-static excitations may differ from its dynamics under DC stress. Reporting experimental measurements, which validate the theoretical predictions, this work clearly demonstrates how invaluable is non-linear system theory for the acquirement of a comprehensive picture of the dynamics of highly non-linear devices, which is an essential prerequisite for a conscious and systematic approach to the design of robust neuromorphic electronics. Given that, as recently proved, the potassium and sodium ion channels in biological axon membranes are locally active memristors, the physical realization of novel artificial neural networks, capable to reproduce the functionalities of the human brain more closely than state-of-the-art purely CMOS hardware architectures, should not leave aside the adoption of resistance switching memories, which, under the appropriate provision of energy, are capable to amplify the small signal, such as the niobium dioxide micro-scale device from NaMLab, chosen as object of theoretical and experimental study in this work.

Implementation of Neuro-Memristive Synapse for Long-and Short-Term Bio-Synaptic Plasticity.

In this paper, we propose a complex neuro-memristive synapse that exhibits the physiological acts of synaptic potentiation and depression of the human-brain. Specifically, the proposed neuromorphic synapse efficiently imitates the synaptic plasticity, especially long-term potentiation (LTP) and depression (LTD), and short-term facilitation (STF) and depression (STD), phenomena of a biological synapse. Similar to biological synapse, the short- or long-term potentiation (STF and LTP) or depression (STD or LTD) of the memristive synapse are distinguished on the basis of time or repetition of input cycles. The proposed synapse is also designed to exhibit the effect of reuptake and neurotransmitters diffusion processes of a bio-synapse. In addition, it exhibits the distinct bio-realistic attributes, i.e., strong stimulation, exponentially decaying conductance trace of synapse, and voltage dependent synaptic responses, of a neuron. The neuro-memristive synapse is designed in SPICE and its bio-realistic functionalities are demonstrated via various simulations.

Cyclic voltammetry of volatile memristors in the Venus flytrap: short-term memory.

Plants have sensory, short-term and long-term memory. Possible candidates for memory in plants are memristors; resistors with memory. Memristors have been found in seeds, plants, flowers and fruits. The electrostimulation of plants by bipolar periodic waves can induce electrical responses with fingerprints of volatile or non-volatile memristors. Here, we show that the electrostimulation of the Venus flytrap (Dionaea muscipula Ellis) by unipolar sinusoidal or triangular periodic electrical trains induces electrical responses in plants with fingerprints of volatile memristors. The discovery of volatile generic memristors in plants opens new directions in the modelling and understanding of electrical phenomena in the plant kingdom.

Microtubules as Sub-Cellular Memristors.

Memristors represent the fourth electrical circuit element complementing resistors, capacitors and inductors. Hallmarks of memristive behavior include pinched and frequency-dependent I-V hysteresis loops and most importantly a functional dependence of the magnetic flux passing through an ideal memristor on its electrical charge. Microtubules (MTs), cylindrical protein polymers composed of tubulin dimers are key components of the cytoskeleton. They have been shown to increase solution's ionic conductance and re-orient in the presence of electric fields. It has been hypothesized that MTs also possess intrinsic capacitive and inductive properties, leading to transistor-like behavior. Here, we show a theoretical basis and experimental support for the assertion that MTs under specific circumstances behave consistently with the definition of a memristor. Their biophysical properties lead to pinched hysteretic current-voltage dependence as well a classic dependence of magnetic flux on electric charge. Based on the information about the structure of MTs we provide an estimate of their memristance. We discuss its significance for biology, especially neuroscience, and potential for nanotechnology applications.

Neuromemristive Circuits for Edge Computing: A Review.

The volume, veracity, variability, and velocity of data produced from the ever increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure. Increasing the data processing capability of edge computing devices at lower power requirements can reduce several overheads for cloud computing solutions. This paper provides the review of neuromorphic CMOS-memristive architectures that can be integrated into edge computing devices. We discuss why the neuromorphic architectures are useful for edge devices and show the advantages, drawbacks, and open problems in the field of neuromemristive circuits for edge computing.

Nonlinear Networks With Mem-Elements: Complex Dynamics via Flux-Charge Analysis Method.

Nonlinear dynamic memory elements, as memristors, memcapacitors, and meminductors (also known as mem-elements), are of paramount importance in conceiving the neural networks, mem-computing machines, and reservoir computing systems with advanced computational primitives. This paper aims to develop a systematic methodology for analyzing complex dynamics in nonlinear networks with such emerging nanoscale mem-elements. The technique extends the flux-charge analysis method (FCAM) for nonlinear circuits with memristors to a broader class of nonlinear networks N containing also memcapacitors and meminductors. After deriving the constitutive relation and equivalent circuit in the flux-charge domain of each two-terminal element in N , this paper focuses on relevant subclasses of N for which a state equation description can be obtained. On this basis, salient features of the dynamics are highlighted and studied analytically: 1) the presence of invariant manifolds in the autonomous networks; 2) the coexistence of infinitely many different reduced-order dynamics on manifolds; and 3) the presence of bifurcations due to changing the initial conditions for a fixed set of parameters (also known as bifurcations without parameters). Analytic formulas are also given to design nonautonomous networks subject to pulses that drive trajectories through different manifolds and nonlinear reduced-order dynamics. The results, in this paper, provide a method for a comprehensive understanding of complex dynamical features and computational capabilities in nonlinear networks with mem-elements, which is fundamental for a holistic approach in neuromorphic systems with such emerging nanoscale devices.

Information can be stored in the human skin memristor which has non-volatile memory.

Much is already understood about the anatomical and physiological mechanisms behind the linear, electrical properties of biological tissues. Studying the non-linear electrical properties, however, opens up for the influence from other processes that are driven by the electric field or movement of charges. An electrical measurement that is affected by the applied electrical stimulus is non-linear and reveals the non-linear electrical properties of the underlying (biological) tissue; if it is done with an alternating current (AC) stimulus, the corresponding voltage current plot may exhibit a pinched hysteresis loop which is the fingerprint of a memristor. It has been shown that human skin and other biological tissues are memristors. Here we performed non-linear electrical measurements on human skin with applied direct current (DC) voltage pulses. By doing so, we found that human skin exhibits non-volatile memory and that analogue information can actually be stored inside the skin at least for three minutes. As demonstrated before, human skin actually contains two different memristor types, one that originates from the sweat ducts and one that is based on thermal changes of the surrounding tissue, the stratum corneum; and information storage is possible in both. Finally, assuming that different physiological conditions of the skin can explain the variations in current responses that we observed among the subjects, it follows that non-linear recordings with DC pulses may find use in sensor applications.

Memristive Imitation of Synaptic Transmission and Plasticity.

In this paper, a memristive artificial neural circuit imitating the excitatory chemical synaptic transmission of biological synapse is designed. The proposed memristor-based neural circuit exhibits synaptic plasticity, one of the important neurochemical foundations for learning and memory, which is demonstrated via the efficient imitation of short-term facilitation and long-term potentiation. Moreover, the memristive artificial circuit also mimics the distinct biological attributes of strong stimulation and deficient synthesis of neurotransmitters. The proposed artificial neural model is designed in SPICE, and the biological functionalities are demonstrated via various simulations. The simulation results obtained with the proposed artificial synapse are similar to the biological features of chemical synaptic transmission and synaptic plasticity.

The non-linear electrical properties of human skin make it a generic memristor.

An electrical measurement is non-linear when the applied stimulus itself affects the electrical properties of the underlying tissue. Corresponding voltage-current plots may exhibit pinched hysteresis loops which is the fingerprint of a memristor (memory resistor). Even though non-linear electrical properties have been demonstrated for different biological tissues like apples, plants and human skin, non-linear measurements as such have not been defined, yet. We are studying the non-linear properties of human skin systematically and initiate non-linear measurements on biological tissues as a field of research in general by introducing applicable recording techniques and parameterization. We found under which voltage stimulus conditions a measurement on human skin is non-linear and show that very low voltage amplitudes are already sufficient. The non-linear properties of human skin originate from the sweat ducts, as well as, from the surrounding tissue, the stratum corneum and we were able to classify the overall skin memristor as a generic memristor. Pinched hysteresis loops vary largely among subjects; an indication for the potential use in biomedical sensor applications.

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications.

Brain-inspired neuromorphic computing has shown great promise beyond the conventional Boolean logic. Nanoscale electronic synapses, which have stringent demands for integration density, dynamic range, energy consumption, etc., are key computational elements of the brain-inspired neuromorphic system. Ferroelectric tunneling junctions have been shown to be ideal candidates to realize the functions of electronic synapses due to their ultra-low energy consumption and the nature of ferroelectric tunneling. Here, we report a new electronic synapse based on a three-dimensional vertical Hf0.5Zr0.5O2-based ferroelectric tunneling junction that meets the full functions of biological synapses. The fabricated three-dimensional vertical ferroelectric tunneling junction synapse (FTJS) exhibits high integration density and excellent performances, such as analog-like conductance transition under a training scheme, low energy consumption of synaptic weight update (1.8 pJ per spike) and good repeatability (>103 cycles). In addition, the implementation of pattern training in hardware with strong tolerance to input faults and variations is also illustrated in the 3D vertical FTJS array. Furthermore, pattern classification and recognition are achieved, and these results demonstrate that the Hf0.5Zr0.5O2-based FTJS has high potential to be an ideal electronic component for neuromorphic system applications.

A Circuit-Based Neural Network with Hybrid Learning of Backpropagation and Random Weight Change Algorithms.

A hybrid learning method of a software-based backpropagation learning and a hardware-based RWC learning is proposed for the development of circuit-based neural networks. The backpropagation is known as one of the most efficient learning algorithms. A weak point is that its hardware implementation is extremely difficult. The RWC algorithm, which is very easy to implement with respect to its hardware circuits, takes too many iterations for learning. The proposed learning algorithm is a hybrid one of these two. The main learning is performed with a software version of the BP algorithm, firstly, and then, learned weights are transplanted on a hardware version of a neural circuit. At the time of the weight transplantation, a significant amount of output error would occur due to the characteristic difference between the software and the hardware. In the proposed method, such error is reduced via a complementary learning of the RWC algorithm, which is implemented in a simple hardware. The usefulness of the proposed hybrid learning system is verified via simulations upon several classical learning problems.

Generalized reconfigurable memristive dynamical system (MDS) for neuromorphic applications.

This study firstly presents (i) a novel general cellular mapping scheme for two dimensional neuromorphic dynamical systems such as bio-inspired neuron models, and (ii) an efficient mixed analog-digital circuit, which can be conveniently implemented on a hybrid memristor-crossbar/CMOS platform, for hardware implementation of the scheme. This approach employs 4n memristors and no switch for implementing an n-cell system in comparison with 2n (2) memristors and 2n switches of a Cellular Memristive Dynamical System (CMDS). Moreover, this approach allows for dynamical variables with both analog and one-hot digital values opening a wide range of choices for interconnections and networking schemes. Dynamical response analyses show that this circuit exhibits various responses based on the underlying bifurcation scenarios which determine the main characteristics of the neuromorphic dynamical systems. Due to high programmability of the circuit, it can be applied to a variety of learning systems, real-time applications, and analytically indescribable dynamical systems. We simulate the FitzHugh-Nagumo (FHN), Adaptive Exponential (AdEx) integrate and fire, and Izhikevich neuron models on our platform, and investigate the dynamical behaviors of these circuits as case studies. Moreover, error analysis shows that our approach is suitably accurate. We also develop a simple hardware prototype for experimental demonstration of our approach.

An analytical model of memristors in plants.

The memristor, a resistor with memory, was postulated by Chua in 1971 and the first solid-state memristor was built in 2008. Recently, we found memristors in vivo in plants. Here we propose a simple analytical model of 2 types of memristors that can be found within plants. The electrostimulation of plants by bipolar periodic waves induces electrical responses in the Aloe vera and Mimosa pudica with fingerprints of memristors. Memristive properties of the Aloe vera and Mimosa pudica are linked to the properties of voltage gated K(+) ion channels. The potassium channel blocker TEACl transform plant memristors to conventional resistors. The analytical model of a memristor with a capacitor connected in parallel exhibits different characteristic behavior at low and high frequency of applied voltage, which is the same as experimental data obtained by cyclic voltammetry in vivo.

Memory elements in the electrical network of Mimosa pudica L.

The fourth basic circuit element, a memristor, is a resistor with memory that was postulated by Chua in 1971. Here we found that memristors exist in vivo. The electrostimulation of the Mimosa pudica by bipolar sinusoidal or triangle periodic waves induce electrical responses with fingerprints of memristors. Uncouplers carbonylcyanide-3-chlorophenylhydrazone and carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decrease the amplitude of electrical responses at low and high frequencies of bipolar sinusoidal or triangle periodic electrostimulating waves. Memristive behavior of an electrical network in the Mimosa pudica is linked to the properties of voltage gated ion channels: the channel blocker TEACl reduces the electric response to a conventional resistor. Our results demonstrate that a voltage gated K(+) channel in the excitable tissue of plants has properties of a memristor. The discovery of memristors in plants creates a new direction in the modeling and understanding of electrical phenomena in plants.