Kinetically controlled metal-elastomer nanophases for environmentally resilient stretchable electronics.

Nanophase mixtures, leveraging the complementary strengths of each component, are vital for composites to overcome limitations posed by single elemental materials. Among these, metal-elastomer nanophases are particularly important, holding various practical applications for stretchable electronics. However, the methodology and understanding of nanophase mixing metals and elastomers are limited due to difficulties in blending caused by thermodynamic incompatibility. Here, we present a controlled method using kinetics to mix metal atoms with elastomeric chains on the nanoscale. We find that the chain migration flux and metal deposition rate are key factors, allowing the formation of reticular nanophases when kinetically in-phase. Moreover, we observe spontaneous structural evolution, resulting in gyrified structures akin to the human brain. The hybridized gyrified reticular nanophases exhibit strain-invariant metallic electrical conductivity up to 156% areal strain, unparalleled durability in organic solvents and aqueous environments with pH 2-13, and high mechanical robustness, a prerequisite for environmentally resilient devices.

Probing Quantum Phases in Ultra-High-Mobility Two-Dimensional Electron Systems Using Surface Acoustic Waves.

Transport measurement, which applies an electric field and studies the migration of charged particles, i.e., the current, is the most widely used technique in condensed matter studies. It is generally assumed that the quantum phase remains unchanged when it hosts a sufficiently small probing current, which is, surprisingly, rarely examined experimentally. In this Letter, we study the ultra-high-mobility two-dimensional electron system using a propagating surface acoustic wave, whose traveling speed is affected by the electrons' compressibility. The acoustic power used in our Letter is several orders of magnitude lower than previous reports, and its induced perturbation to the system is smaller than the transport current. Therefore we are able to observe the quantum phases become more incompressible when hosting a perturbative current.

Unlocking the Potential of Porous Bi2Te3-Based Thermoelectrics Using Precise Interface Engineering through Atomic Layer Deposition.

Porous thermoelectric materials offer exciting prospects for improving the thermoelectric performance by significantly reducing the thermal conductivity. Nevertheless, porous structures are affected by issues, including restricted enhancements in performance attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy for overcoming these challenges using porous Bi0.4Sb1.6Te3 (BST) by combining porous structuring and interface engineering via atomic layer deposition (ALD). Porous BST powder was produced by selectively dissolving KCl in a milled mixture of BST and KCl; the interfaces were engineered by coating ZnO films through ALD. This novel architecture remarkably reduced the thermal conductivity owing to the presence of several nanopores and ZnO/BST heterointerfaces, promoting efficient phonon scattering. Additionally, the ZnO coating mitigated the high resistivity associated with the porous structure, resulting in an improved power factor. Consequently, the ZnO-coated porous BST demonstrated a remarkable enhancement in thermoelectric efficiency, with a maximum zT of approximately 1.53 in the temperature range of 333-353 K, and a zT of 1.44 at 298 K. Furthermore, this approach plays a significant role in enhancing the mechanical strength, effectively mitigating a critical limitation of porous structures. These findings open new avenues for the development of advanced porous thermoelectric materials and highlight their potential for precise interface engineering through the ALD.

Next-generation even-denominator fractional quantum Hall states of interacting composite fermions.

The discovery of the fractional quantum Hall state (FQHS) in 1982 ushered a new era of research in many-body condensed matter physics. Among the numerous FQHSs, those observed at even-denominator Landau level filling factors are of particular interest as they may host quasiparticles obeying non-Abelian statistics and be of potential use in topological quantum computing. The even-denominator FQHSs, however, are scarce and have been observed predominantly in low-disorder two-dimensional (2D) systems when an excited electron Landau level is half filled. An example is the well-studied FQHS at filling factor [Formula: see text] 5/2 which is believed to be a Bardeen-Cooper-Schrieffer-type, paired state of flux-particle composite fermions (CFs). Here, we report the observation of even-denominator FQHSs at [Formula: see text] 3/10, 3/8, and 3/4 in the lowest Landau level of an ultrahigh-quality GaAs 2D hole system, evinced by deep minima in longitudinal resistance and developing quantized Hall plateaus. Quite remarkably, these states can be interpreted as even-denominator FQHSs of CFs, emerging from pairing of higher-order CFs when a CF Landau level, rather than an electron or a hole Landau level, is half-filled. Our results affirm enhanced interaction between CFs in a hole system with significant Landau level mixing and, more generally, the pairing of CFs as a valid mechanism for even-denominator FQHSs, and suggest the realization of FQHSs with non-Abelian anyons.

A Mediator-Free Multi-Ply Biofuel Cell Using an Interfacial Assembly between Hydrophilic Enzymes and Hydrophobic Conductive Oxide Nanoparticles with Pointed Apexes.

Biofuel cells (BFCs) based on enzymatic electrodes hold great promise as power sources for biomedical devices. However, their practical use is hindered by low electron transfer efficiency and poor operational stability of enzymatic electrodes. Here, a novel mediator-free multi-ply BFC that overcomes these limitations and exhibits both substantially high-power output and long-term operational stability is presented. The approach involves the utilization of interfacial interaction-induced assembly between hydrophilic glucose oxidase (GOx) and hydrophobic conductive indium tin oxide nanoparticles (ITO NPs) with distinctive shapes, along with a multi-ply electrode system. For the preparation of the anode, GOx and oleylamine-stabilized ITO NPs with bipod/tripod type are covalently assembled onto the host fiber electrode composed of multi-walled carbon nanotubes and gold (Au) NPs. Remarkably, despite the contrasting hydrophilic and hydrophobic properties, this interfacial assembly approach allows for the formation of nanoblended GOx/ITO NP film, enabling efficient electron transfer within the anode. Additionally, the cathode is prepared by sputtering Pt onto the host electrode. Furthermore, the multi-ply fiber electrode system exhibits unprecedented high-power output (≈10.4 mW cm-2 ) and excellent operational stability (2.1 mW cm-2 , ≈49% after 60 days of continuous operation). The approach can provide a basis for the development of high-performance BFCs.

Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition.

Understanding the initial growth process during atomic layer deposition (ALD) is essential for various applications employing ultrathin films. This study investigated the initial growth of ALD Ir films using tricarbonyl-(1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O2. Isolated Ir nanoparticles were formed on the oxide surfaces during the initial growth stage, and their density and size were significantly influenced by the growth temperature and substrate surface, which strongly affected the precursor adsorption and surface diffusion of the adatoms. Higher-density and smaller nanoparticles were formed at high temperatures and on the Al2O3 surface, forming a continuous Ir film with a smaller thickness, resulting in a very smooth surface. These findings suggest that the initial growth behavior of the Ir films affects their surface roughness and continuity and that a comprehensive understanding of this behavior is necessary for the formation of continuous ultrathin metal films.

Dynamic Response of Wigner Crystals.

The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. We examine this quantum phase with simultaneous capacitance and conductance measurements, and observe a large capacitive response while the conductance vanishes. We study one sample with four devices whose length scale is comparable with the crystal's correlation length, and deduce the crystal's elastic modulus, permittivity, pinning strength, etc. Such a systematic quantitative investigation of all properties on a single sample has a great promise to advance the study of Wigner crystals.

Correlated States of 2D Electrons near the Landau Level Filling ν=1/7.

The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors (ν≲1/6) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultrahigh-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density n=6.1×10^{10}/cm^{2} and mobility µ=25×10^{6} cm^{2}/V s, we find a deep minimum in the longitudinal magnetoresistance (R_{xx}) at ν=1/7 when T≃104 mK. There is also a clear sign of a developing minimum in R_{xx} at ν=2/13. While insulating phases are still predominant when ν≲1/6, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence ν=p/(2mp±1) even in the very low Landau level filling limit. The magnetic-field-dependent activation energies deduced from the relation R_{xx}∝e^{E_{A}/2kT} corroborate this view and imply the presence of pinned Wigner solid states when ν≠p/(2mp±1). Similar results are seen in another sample with a lower density, further generalizing our observations.

Ultra-high-quality two-dimensional electron systems.

Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interactions. Many key observations have been made in these systems as sample quality has improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of 44 × 106 cm2 V-1 s-1 at an electron density of 2.0 × 1011 cm-2. These results imply only 1 residual impurity for every 1010 Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe and bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap (Δ) of the fractional quantum Hall state at the Landau-level filling (ν) = 5/2, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches Δ ≈ 820 mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and substantially advance the field.

Spatial Mapping of Local Density Variations in Two-dimensional Electron Systems Using Scanning Photoluminescence.

We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of ∼2.2 × 108 cm-2. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to ∼9 × 109 cm-2 from ∼1.2 × 109 cm-2 when the buffer layer between the substrate and the quantum well is decreased by a factor of 7. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems.

Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films.

We demonstrate that ZnO films grown by atomic layer deposition (ALD) can be employed as a substrate to explore the effects of electrical conductivity on cell adhesion, proliferation, and morphogenesis. ZnO substrates with precisely tunable electrical conductivity were fabricated on glass substrates using ALD deposition. The electrical conductivity of the film increased linearly with increasing duration of the ZnO deposition cycle (thickness), whereas other physical characteristics, such as surface energy and roughness, tended to saturate at a certain value. Differences in conductivity dramatically affected the behavior of SF295 glioblastoma cells grown on ZnO films, with high conductivity (thick) ZnO films causing growth arrest and producing SF295 cell morphologies distinct from those cultured on insulating substrates. Based on simple electrostatic calculations, we propose that cells grown on highly conductive substrates may strongly adhere to the substrate without focal-adhesion complex formation, owing to the enhanced electrostatic interaction between cells and the substrate. Thus, the inactivation of focal adhesions leads to cell proliferation arrest. Taken together, the work presented here confirms that substrates with high conductivity disturb the cell-substrate interaction, producing cascading effects on cellular morphogenesis and disrupting proliferation, and suggests that ALD-grown ZnO offers a single-variable method for uniquely tailoring conductivity.

Drawing circuits with carbon nanotubes: scratch-induced graphoepitaxial growth of carbon nanotubes on amorphous silicon oxide substrates.

Controlling the orientations of nanomaterials on arbitrary substrates is crucial for the development of practical applications based on such materials. The aligned epitaxial growth of single-walled carbon nanotubes (SWNTs) on specific crystallographic planes in single crystalline sapphire or quartz has been demonstrated; however, these substrates are unsuitable for large scale electronic device applications and tend to be quite expensive. Here, we report a scalable method based on graphoepitaxy for the aligned growth of SWNTs on conventional SiO2/Si substrates. The "scratches" generated by polishing were found to feature altered atomic organizations that are similar to the atomic alignments found in vicinal crystalline substrates. The linear and circular scratch lines could promote the oriented growth of SWNTs through the chemical interactions between the C atoms in SWNT and the Si adatoms in the scratches. The method presented has the potential to be used to prepare complex geometrical patterns of SWNTs by 'drawing' circuits using SWNTs without the need for state-of-the-art equipment or complicated lithographic processes.