Morphology, electrokinetic characteristics and the effect on biofilm formation of carrageenan:chitosan polyelectrolyte complexes.

Carrageenan:chitosan (CG:CH) polyelectrolyte complexes (PEC) were obtained and the effect of the initial components ratio on formation was studied by dynamic light scattering, atomic force microscopy (AFM) and electrokinetic measurements. Positively charged PEC particles (average ζ-potential 40.2 mV) were formed, provided that the polycation was present in excess in the complex and was stabilized by chitosan amino groups. According to the AFM data, chitosan was located on the surface of the carrageenan fibers. In PEC where carrageenan prevailed, the number of unbound sulfate groups decreased when the chitosan content increased, this resulted in a decrease in the PEC negative surface charge (from -92.4 to -55.6 mV). In this case, AFM showed that chitosan was incorporated into the network structure of carrageenan and breaks it at a CG:CH ratio of 1:0.5 w/w. Complexes with a high content of kappa-CG inhibited biofilm formation by Gram negative and Gram positive microorganisms.

Enhancement of the Si p-n diode NIR photoresponse by embedding ß-FeSi2 nanocrystallites.

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/ß-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of ß-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of ß-FeSi2.

The supramolecular structure of LPS-chitosan complexes of varied composition in relation to their biological activity.

The complexes of chitosan (Ch) with lipopolysaccharides (LPSs) from Escherichia coli O55:B5 (E-LPS) and Yersinia pseudotuberculosis 1B 598 (Y-LPS) of various weight compositions were investigated using quasi-elastic light scattering, ζ-potential distribution assay and atomic force microscopy. The alteration of ζ-potential of E-LPS-Ch complexes from negative to positive values depending on Ch content was detected. The Y-LPS-Ch complexes had similar positive ζ-potentials regardless of Ch content. The transformation of the supramolecular structure of E-LPS after binding with to Ch was revealed. Screening of E-LPS and Y-LPS particles by Ch in the complexes with high polycation was detected. The ability of LPS-Ch complex to induce biosynthesis of TNF-α and reactive oxygen species in stimulated human mononuclear cells was studied. A significant decrease in activity complexes compared to that of the initial LPS was observed only for E-LPS-Ch complexes.

Atomic force microscopy imaging of carrageenans from red algae of Gigartinaceae and Tichocarpaceae families.

In the present article, the atomic force microscopy was applied to investigate macromolecular structures of various carrageenan types including hybrid polysaccharides (κ-, κ/ß-, κ/ι-, λ-, and X-carrageenans) depending on polysaccharide concentration. The structures dependence on a polysaccharide concentration also was focused. κ-Carrageenan forms both single and two stranded structures at a low concentration. At high concentrations κ-, κ/ß-, and κ/ι-carrageenans form fibrous network-like structures by a side-by-side association type at the same time for κ/ι-carrageenan end-to-end association type also was found. Comparably to κ-carrageenan, κ/ß-carrageenan network was more open with coarser fibers while κ/ι-carrageenan structure is characterized with a more flexible network. Honeycombed structures due to end-to-end and side-by-side association types were observed for X-carrageenan, while λ-carrageenan formed honeycombed structures only at high concentrations. In order to investigate topographical parameters of the carrageenans macromolecular structure a new method of the autocorrelation function analysis was used for the first time.

Investigation of multilayer silicon structures with buried iron silicide nanocrystallites: growth, structure, and properties.

The growth of nanosize islands of iron silicides on Si(100) substrates and epitaxial silicon overgrowth atop them have been studied by low energy electron diffraction and reflectance high energy electron diffraction methods. The near optimal formation conditions of iron silicide islands with high density and minimal sizes have been determined by using of atomic force microscopy. Multilayer (8-10) monolithic structures with buried iron silicide nanocrystallites have been grown after the definition of monocrystalline burying conditions of iron silicides nanocrystallites in silicon lattice. The structure of buried nanocrystallites has been studied in multilayer monolithic heterostructures by high resolution transmission electron microscopy. It was established that in multilayer samples the majority of nanocrystallites have beta-FeSi2 structure, but some of them have gamma-FeSi2 structure. It was observed an influence of additional annealing at 850 degrees C on the morphology and structure of nanocrystallites. By means of deep level transient spectroscopy data one and two trap levels have been observed in multilayer structures (without and with additional annealing, respectively). Photoluminescence spectra have been studied at 4.2 K and the causes of its absence from buried beta-FeSi, NC have been analyzed.