Spin-Resolved Magneto-Tunneling and Giant Anisotropic g-Factor in Broken Gap InAs-GaSb Core-Shell Nanowires.

We experimentally and computationally investigate the magneto-conductance across the radial heterojunction of InAs-GaSb core-shell nanowires under a magnetic field, B, up to 30 T and at temperatures in the range 4.2-200 K. The observed double-peak negative differential conductance markedly blue-shifts with increasing B. The doublet accounts for spin-polarized currents through the Zeeman split channels of the InAs (GaSb) conduction (valence) band and exhibits strong anisotropy with respect to B orientation and marked temperature dependence. Envelope function approximation and a semiclassical (WKB) approach allow to compute the magnetic quantum states of InAs and GaSb sections of the nanowire and to estimate the B-dependent tunneling current across the broken-gap interface. Disentangling different magneto-transport channels and a thermally activated valence-to-valence band transport current, we extract the g-factor from the spin-up and spin-down dI/dV branch dispersion, revealing a giant, strongly anisotropic g-factor in excess of 60 (100) for the radial (tilted) field configurations.

Phonon-mediated room-temperature quantum Hall transport in graphene.

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.

The Low-Temperature Photocurrent Spectrum of Monolayer MoSe2: Excitonic Features and Gate Voltage Dependence.

Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe2 via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe2.

Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities.

Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. Due to their chemical stability, transition metal dichalcogenides (TMDs) are ideal candidates to produce ionic-liquid-gated FETs. Furthermore, as recently discovered, ILG can be used to obtain the band gap of two-dimensional semiconductors directly from the simple transfer characteristics. In this work, we present an overview of the operation principles of ionic liquid gating in TMD-based transistors, establishing the importance of the reference voltage to obtain hysteresis-free transfer characteristics, and hence, precisely determine the band gap. We produced ILG-based bilayer WSe2 FETs and demonstrated their ambipolar behavior. We estimated the band gap directly from the transfer characteristics, demonstrating the potential of ILG as a spectroscopy technique.

Fast response photogating in monolayer MoS2 phototransistors.

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been the object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: the photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors, PGE is generally attributed to charge trapping by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly-responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies.

Water-dispersible three-dimensional LC-nanoresonators.

Nanolithography techniques enable the fabrication of complex nanodevices that can be used for biosensing purposes. However, these devices are normally supported by a substrate and their use is limited to in vitro applications. Following a top-down procedure, we designed and fabricated composite inductance-capacitance (LC) nanoresonators that can be detached from their substrate and dispersed in water. The multimaterial composition of these resonators makes it possible to differentially functionalize different parts of the device to obtain stable aqueous suspensions and multi-sensing capabilities. For the first time, we demonstrate detection of these devices in an aqueous environment, and we show that they can be sensitized to their local environment and to chemical binding of specific molecular moieties. The possibility to optically probe the nanoresonator resonance in liquid dispersions paves the way to a variety of new applications, including injection into living organisms for in vivo sensing and imaging.