RESUMO
Auger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.
RESUMO
We demonstrate that nonlinear electrical transport through a two-terminal nanoscale sample is not symmetric in the magnetic field B. More specifically, we have measured the lowest order B-asymmetric terms in single-walled carbon nanotubes. Theoretically, these terms can be used to infer both the strength of electron-electron interactions and the handedness of the nanotube. Consistent with theory, we find that at high temperatures the B-linear term is small and has a constant sign independent of Fermi energy, while at low temperatures it develops mesoscopic fluctuations. We also find surprising magnetoresistance at zero bias in the metallic regime.