Resonant-antiresonant coupled cavity VCSELs.

The wavelength tuning range of a tunable vertical-cavity surface-emitting laser (VCSEL) is strongly influenced by the design of the interface between the semiconductor cavity and the air cavity. A simplified model is used to investigate the origin of the dramatic differences in free spectral range (FSR) and tuning slope observed in semiconductor cavity dominant, extended cavity, and air cavity dominant VCSELs. The differences arise from the positioning of the resonant and antiresonant wavelengths of the semiconductor cavity with respect to the center wavelength. The air cavity dominant design is realized by designing an antiresonant semiconductor cavity, resulting in a larger tuning slope near the center of the tuning range and a wider FSR toward the edges of the tuning range. The findings from the simplified model are confirmed with the simulation of a full VCSEL structure. Using an air cavity dominant design, an electrically pumped laser with a tuning range of 68.38 nm centered at 1056.7 nm at a 550 kHz sweep rate is demonstrated with continuous wave emission at room temperature. This epitaxial design rule can be used to increase the tuning range of tunable VCSELs, making them more applicable in swept-source optical coherence tomography and frequency-modulated continuous-wave LIDAR systems.

Indium Phosphide Photonic Integrated Circuits for Free Space Optical Links.

An indium phosphide (InP)-based photonic integrated circuit (PIC) transmitter for free space optical communications was demonstrated. The transmitter consists of a sampled grating distributed Bragg reflector (SGDBR) laser, a high-speed semiconductor optical amplifier (SOA), a Mach-Zehnder modulator, and a high-power output booster SOA. The SGDBR laser tunes from 1521 nm to 1565 nm with >45 dB side mode suppression ratio. The InP PIC was also incorporated into a free space optical link to demonstrate the potential for low cost, size, weight and power. Error-free operation was achieved at 3 Gbps for an equivalent link length of 180 m (up to 300 m with forward error correction).

Optical dynamic memory based on an integrated active ring resonator.

All-optical computing has been considered a solution for future computers to overcome the speed bottleneck encountered by the current electronic computers. High-speed optical memory is one of the key building blocks in realizing all-optical computing. In this Letter, we demonstrate an optical dynamic memory based on an amplified high Q-factor ring resonator that has the capability to achieve an infinite memory time. The optical memory uses an external pulse train to refresh the resonator, an operation in analogy to an electronic dynamic random-access memory widely used in modern computers, but at a speed that can be orders of magnitude faster. In our demonstration, a writing speed of 2.5 GHz is achieved with instant reading capability. The maximum writing speed can be as fast as 27.3 GHz if a shorter pulse is used.

Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators.

We design and experimentally demonstrate a highly integrated heterodyne optical phase-locked loop (OPLL) consisting of an InP-based coherent photonic receiver, high-speed feedback electronics, and an RF synthesizer. Such coherent photonic integrated circuits contain two widely tunable lasers, semiconductor optical amplifiers, phase modulators, and a pair of balanced photodetectors. Offset phase-locking of the two lasers is achieved by applying an RF signal to an on-chip optical phase modulator following one of the lasers and locking the other one to a resulting optical sideband. Offset locking frequency range >16 GHz is achieved for such a highly sensitive OPLL system which can employ up to the third-order-harmonic optical sidebands for locking. Furthermore, the rms phase error between the two lasers is measured to be 8°.

An integrated parity-time symmetric wavelength-tunable single-mode microring laser.

Mode control in a laser cavity is critical for a stable single-mode operation of a ring laser. In this study we propose and experimentally demonstrate an electrically pumped parity-time (PT)-symmetric microring laser with precise mode control, to achieve wavelength-tunable single-mode lasing with an improved mode suppression ratio. The proposed PT-symmetric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled active microring resonators. By incorporating multiple semiconductor optical amplifiers in the microring resonators, the PT-symmetry condition can be achieved by a precise manipulation of the interplay between the gain and loss in the two microring resonators, and the incorporation of phase modulators in the microring resonators enables continuous wavelength tuning. Single-mode lasing at 1,554.148 nm with a sidemode suppression ratio exceeding 36 dB is demonstrated and the lasing wavelength is continuously tunable from 1,553.800 to 1,554.020 nm.

Homodyne detection of coherence and phase shift of a quantum dot in a cavity.

A homodyne measurement technique is demonstrated that enables direct observation of the coherence and phase of light that passed through a coupled quantum dot (QD)-microcavity system, which in turn enables clear identification of coherent and incoherent QD transitions. As an example, we study the effect of power-induced decoherence, where the QD transition saturates and incoherent emission from the excited state dominates at higher power. Further, we show that the same technique allows measurement of the quantum phase shift induced by a single QD in the cavity, which is strongly enhanced by cavity quantum electrodynamics effects.

Fast, electrically controlled polarization modulation of multimode vertical-cavity surface-emitting lasers by RF frequency modulation.

We report on a study of polarization properties of asymmetric, multimode vertical-cavity surface-emitting lasers (VCSEL) subjected to electrical RF modulation. When subjected to RF modulation, complex frequency-dependent polarization properties, especially near the polarization switching point are revealed. We propose a scheme of rapidly switching the two RF frequencies modulating the VCSEL, in order to achieve fast polarization modulation in these VCSEL. Polarization modulation up to 300 MHz by modulating the RF frequency and up to 1.5 GHz with RF power modulation has been demonstrated; the fastest reported electrically controlled polarization modulation for multimode VCSELs.

Single-chip integrated transmitters and receivers.

Compared to traditional optics, photonic integrated circuits have advantages in size, weight, performance, reliability, power consumption, and cost. The size and stability also enable them to realize unique functions in coherent optics. Optical phase-locked loop (OPLL) based transmitters and receivers are examples. With photonic integration, the loop bandwidth of the OPLL can increase by orders of magnitude, and stable OPLLs have been achieved with closed-loop bandwidths >1 GHz.

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.

We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with >40 dB/mm gain at 1570 nm, and passive waveguide losses <2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.

Highly integrated optical heterodyne phase-locked loop with phase/frequency detection.

A highly-integrated optical phase-locked loop with a phase/frequency detector and a single-sideband mixer (SSBM) has been proposed and demonstrated for the first time. A photonic integrated circuit (PIC) has been designed, fabricated and tested, together with an electronic IC (EIC). The PIC integrates a widely-tunable sampled-grating distributed-Bragg-reflector laser, an optical 90 degree hybrid and four high-speed photodetectors on the InGaAsP/InP platform. The EIC adds a single-sideband mixer, and a digital phase/frequency detector, to provide single-sideband heterodyne locking from -9 GHz to 7.5 GHz. The loop bandwith is 400 MHz.

Integrated InP-InGaAsP tunable coupled ring optical bandpass filters with zero insertion loss.

Second and third-order monolithically integrated coupled ring bandpass filters are demonstrated in the InP-InGaAsP material system with active semiconductor optical amplifiers (SOAs) and current injection phase modulators (PMs). Such integration achieves a high level of tunability and precise generation of optical filters in the RF domain at telecom wavelengths while simultaneously compensating for device insertion loss. Passband bandwidth tunability of 3.9 GHz to 7.1 GHz and stopband extinction up to 40 dB are shown for third-order filters. Center frequency tunability over a full free spectral range (FSR) is demonstrated, allowing for the placement of a filter anywhere in the telecom C-band. A Z-transform representation of coupled resonator filters is derived and compared with experimental results. A theoretical description of filter tunability is presented.

Etched beam splitters in InP/InGaAsP.

An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 µm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

Measurement of intermodulation distortion in high-linearity photodiodes.

Accurately characterizing third order intermodulation distortion (IMD3) in high-linearity photodiodes is challenging. Two measurement techniques are evaluated-a standard two-tone measurement and a more complicated three-tone measurement technique to measure IMD3. A model of the measurement system is developed and used to analyze the limitations of the two techniques in determining the distortion of highly linear photodiodes. Experimental validation is provided by comparing the simulation trends with IMD3 results measured on two types of waveguide photodiodes: 1) an InP based uni-traveling-carrier (UTC) photodiode and 2) a Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate.

Compact beam splitters with deep gratings for miniature photonic integrated circuits: design and implementation aspects.

We present an extensive study of an ultracompact grating-based beam splitter suitable for photonic integrated circuits (PICs) that have stringent density requirements. The 10 microm long beam splitter exhibits equal splitting, low insertion loss, and also provides a high extinction ratio in an integrated coherent balanced receiver. We further present the design strategies for avoiding mode distortion in the beam splitter and discuss optimization of the widths of the detectors to improve insertion loss and extinction ratio of the coherent receiver circuit. In our study, we show that the grating-based beam splitter is a competitive technology having low fabrication complexity for ultracompact PICs.

Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer.

A novel fabrication process has been developed for fabricating undercut-etched electroabsorption modulators that are compatible with tunable lasers. This process allows for the incorporation of highly doped p-type InGaAs above the upper cladding as an ohmic contact layer. The EAM demonstrates significant improvement in the microwave performance with little effect on modulation efficiency due to the undercut etching. This device uses a traveling wave electrode design with an integrated, matched termination resistor to demonstrate a 34 GHz 3-dB bandwidth for a 600 microm long modulator.

SOA gate array recirculating buffer with fiber delay loop.

We present a compact variable delay buffer for storage of 40 byte packets. The recirculating buffer is based on an InP SOA gate array two-by-two switch which provides greater than 40 dB of extinction, sub-nanosecond switching, and fiber-to-fiber gain. The switch is used with a fiber delay loop 450 centimeters, or 23 ns, in length. The buffer is demonstrated with greater than 98% packet recovery at 40 Gb/s for up to 184 ns of storage.

Extinction ratio regeneration, signal re-amplification (2R), and broadband wavelength switching using a monolithically integrated photocurrent driven wavelength converter.

Detailed wavelength conversion, extinction ratio regeneration, and signal re-amplification experiments are performed using a monolithically integrated, widely tunable photocurrent driven wavelength converter. A -3.5 dB power penalty is observed in bit error rate measurements at 2.5 Gb/s when the extinction ratio of an incoming signal is regenerated from 4 dB to 11 dB, and the input signal wavelength is switched from 1548 nm to an output wavelength range between 1533 nm and 1553 nm. When the input signal extinction ratio is regenerated from 4 to 11 dB, the wavelength converter provides facet to facet conversion gain of 5 dB, 7.7 dB, and 7.6 dB for conversion from 1548 nm to output wavelengths of 1533, 1545 nm, and 1553 nm.