The development of sensitive graphene-based surface acoustic wave sensors for NO2 detection at room temperature.

Bilayer graphene (Bl-Gr) and sulphur-doped graphene (S-Gr) have been integrated with LiTaO3 surface acustic wave (SAW) sensors to enhance the performance of NO2 detection at room temperature. The sensitivity of the Bl-Gr SAW sensors toward NO2, measured at room temperature, was 0.29º/ppm, with a limit of detection of 0.068 ppm. The S-Gr SAW sensors showed 0.19º/ppm sensitivity and a limit of detection of 0.140 ppm. The origin of these high sensitivities was attributed to the mass loading and elastic effects of the graphene-based sensing materials, with surface changes caused by the absorption of the NO2 molecules on the sensing films. Although there are no significant differences regarding the sensitivity and detection limit of the two types of sensors, the measurements in the presence of interferent gases and various humidity conditions outlined much better selectivity and sensing performances towards NO2 gas for the Bl-Gr SAW sensors.

Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering.

In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films' optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.

Antimicrobial Activity and Degradation Ability Study on Nanoparticle-Enriched Formulations Specially Designed for the Neutralization of Real and Simulated Biological and Chemical Warfare Agents.

The present work reveals a comprehensive decontamination study on real and simulated biological and chemical warfare agents (BCWA). The emphasis was on evaluating the antimicrobial activity against real biological warfare agents, such as Bacillus anthracis, and also the capacity of neutralizing real chemical warfare agents, such as mustard gas or soman, by employing three different types of organic solutions enriched with ZnO, TiO2, and zeolite nanoparticles, specially designed for decontamination applications. The capacity of decontaminating BCWA was evaluated through specific investigation tools, including surface monitoring with the swabs method, minimum inhibitory (MIC) and minimum bactericidal concentration (MBC) evaluations, time-kill tests for microorganisms, and GC-MS for monitoring chemical agents on different types of surfaces (glass, painted metal, rubber, and cotton butyl rubber). These tests revealed high decontamination factors for BCWA even after only 10 min, accomplishing the requirements imposed by NATO standards. At the completion of the decontamination process, the formulations reached 100% efficacy for Bacillus anthracis after 10-15 min, for soman after 20-30 min, and for mustard gas in an interval comprised between 5 and 24 h depending on the type of surface analyzed.

Bloch oscillations at room temperature in graphene/h-BN electrostatic superlattices.

In this manuscript, we report the fabrication and the measurements of Bloch oscillations at room temperature in electrostatic graphene/h-BN superlattices. The electrostatic superlattice consists of an array of tilted metallic electrodes deposited over graphene monolayer/h-BN monolayer grown on 2 inch wafers of doped Si/SiO2. We show the formation of minibands at room temperature, negative differential resistance and the evidence of Bloch oscillations. The experimental results are sustained by numerical modelling of these 2D superlattices. The experimental results are sustained by numerical modelling of these 2D superlattices. At room temperature, we have measured a period of Bloch oscillations of 55 meV which corresponds to a frequency of 13 THz.

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection.

GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge1-xSnx)1-y(SiO2)y layers and subsequent rapid thermal annealing at a low temperature of 400 °C. Intrinsic GeSn structural defects give p-type behavior, while the presence of oxygen leads to the n-character of the embedded GeSn NCs. Such an embedded NCs/epitaxial GeSn p-n heterostructure shows superior photoelectrical response up to 3 orders of magnitude increase in the 1.2-2.5 µm range, as compared to performances of diode based only on embedded NCs.