Sub-Hz Closed-Loop Electro-Optomechanical Oscillator with Gallium Phosphide Photonic Crystal Integrated on SoI Circuitry.

We report on a new approach of a low phase noise electro-optomechanical oscillator directly working in the GHz frequency range. The developed nanoscale oscillator is a one-dimensional photonic crystal made of gallium phosphide (GaP), heterogeneously integrated on silicon-on-insulator circuitry. Based on the strong interaction between the optical mode at the telecommunication wavelength and the mechanical mode in GHz, ultra-pure mechanical oscillations are enabled and directly imprinted on an optical carrier. Further stabilization is achieved with a delayed optoelectronic feedback loop using integrated electro-mechanical self-injection. We achieve a short-term stability of 0.7 Hz linewidth and a long-term stability with an Allan deviation below 10-7 Hz/Hz at 10 s averaging time, which represents an important step toward fully integrated optomechanical oscillators. Integrability and the low phase noise of this oscillator address some of the most important needs of optoelectronic oscillators and pave the way toward on-chip integrated microwave oscillators for microwave applications such as RADARs.

Noise investigation of CW and mode-locked harmonic cavity nanolasers.

We theoretically investigate the noise properties of harmonic cavity nanolasers by introducing a model of coupled equations of evolution of the modes, taking spontaneous emission into account. This model is used to predict the noise among the nanolaser Hermite-Gaussian modes, both in continuous wave and mode-locked regimes. In the first case, the laser noise is described in terms of noise modes, thus illustrating the role of the laser dynamics. In the latter case, this leads to the calculation of the fluctuations of the pulse train parameters. The influence of the different laser parameters, including the amount of saturated absorption and the Henry factors, on the noise of the mode-locked regime is discussed in details.

Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis.

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

Photonic Crystal Optical Parametric Oscillator.

We report a new class of Optical Parametric Oscillators, based on a 20µm-long semiconductor Photonic Crystal Cavity and operating at Telecom wavelengths. Because the confinement results from Bragg scattering, the optical cavity contains a few modes, approximately equispaced in frequency. Parametric oscillation is reached when these high Q modes are thermally tuned into a triply resonant configuration, whereas any other parametric interaction is strongly suppressed. The lowest pump power threshold is estimated to 50 - 70µW. This source behaves as an ideal degenerate Optical Parametric Oscillator addressing the needs in the field of quantum optical circuits, paving the way to the dense integration of highly efficient nonlinear sources of squeezed light or entangled photons pairs.

Robustness of mode-locking in harmonic cavity nanolasers subjected to potential distortions.

We theoretically analyze the robustness to potential distortion of mode-locking in a harmonic cavity nanolaser sustaining oscillation of Hermite-Gaussian modes. Different types of imperfections of the harmonic potential that create the Hermite-Gaussian modes are considered: the non-parabolicity of the potential and the possible random errors in the shape of the potential. The influence of the different laser parameters, including the Henry factors of the gain medium and the saturable absorber, on the robustness of the mode-locked regime is discussed in detail.

Mode Locking of the Hermite-Gaussian Modes of a Nanolaser.

Mode locking is predicted in a nanolaser cavity forming an effective photonic harmonic potential. The cavity is substantially more compact than a Fabry-Perot resonator with a comparable pulsing period, which is here controlled by the potential. In the limit of instantaneous gain and absorption saturation, mode locking corresponds to a stable dissipative soliton, which is very well approximated by the coherent state of a quantum mechanical harmonic oscillator. This property is robust against noninstantaneous material response and nonzero phase-intensity coupling.

High frequency optomechanical disk resonators in III-V ternary semiconductors: erratum.

An erratum is presented to correct for a typo in the appendix of the original article.

Adaptive Control of Necklace States in a Photonic Crystal Waveguide.

Resonant cavities with high quality factor and small mode volume provide crucial enhancement of light-matter interactions in nanophotonic devices that transport and process classical and quantum information. The production of functional circuits containing many such cavities remains a major challenge, as inevitable imperfections in the fabrication detune the cavities, which strongly affects functionality such as transmission. In photonic crystal waveguides, intrinsic disorder gives rise to high-Q localized resonances through Anderson localization; however their location and resonance frequencies are completely random, which hampers functionality. We present an adaptive holographic method to gain reversible control on these randomly localized modes by locally modifying the refractive index. We show that our method can dynamically form or break highly transmitting necklace states, which is an essential step toward photonic-crystal-based quantum networks and signal processing circuits, as well as slow light applications and fundamental physics.

Silicon-Phosphorene Nanocavity-Enhanced Optical Emission at Telecommunications Wavelengths.

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 µm ( Eg = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

Fully embedded photonic crystal cavity with Q=0.6 million fabricated within a full-process CMOS multiproject wafer.

A two dimensional photonic crystal (PhC) resonator, based on a recent design concept, entirely embedded in Silica, is fabricated in a CMOS full-process multiproject wafer, including additional steps such as implantation, metalization, Germanium deposition and planarization. A large loaded Q-factor (5.9 × 105) is achieved without removal of the silica cladding. A statistical analysis over 56 devices leads to an average value for the loaded Q of 4 × 105, in close agreement with calculations. An upper boundary for the fabrication disorder is estimated to 1.2 nm.

Nonlinearities in GaAs cavities with high CW input powers enabled by photo-oxidation quenching through ALD encapsulation.

We demonstrate that conformal encapsulation using atomic layer deposition of GaAs nano-cavity resonator made of photonic crystal cavity prevents photo-induced oxidation. This improvement allows injecting a large quantity of energy in the resonator without any degradation of the material, thus enabling spectral stability of the resonance. We prove second harmonic and third harmonic generation over more than one decade of pump power variation, thanks to this encapsulation, with a total efficiency (ηSHG = 8.3 × 10-5 W-1 and ηTHG = 1.2 × 10-3 W-2 ) and a large net output energy for both operations (PSHGout=0.2nW and PTHGout=8pW).

High frequency optomechanical disk resonators in III-V ternary semiconductors.

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0.5Ga0.5P and Al0.4Ga0.6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.

Measurement of the linear thermo-optical coefficient of Ga0.51In0.49P using photonic crystal nanocavities.

Ga0.51In0.49P is a promising candidate for thermally tunable nanophotonic devices due to its low thermal conductivity. In this work we study its thermo-optical response. We obtain the linear thermo-optical coefficient dn/dT=2.0±0.3·10-4 K-1 by investigating the transmission properties of a single mode-gap photonic crystal nanocavity.

Tuning out disorder-induced localization in nanophotonic cavity arrays.

Weakly coupled high-Q nanophotonic cavities are building blocks of slow-light waveguides and other nanophotonic devices. Their functionality critically depends on tuning as resonance frequencies should stay within the bandwidth of the device. Unavoidable disorder leads to random frequency shifts which cause localization of the light in single cavities. We present a new method to finely tune individual resonances of light in a system of coupled nanocavities. We use holographic laser-induced heating and address thermal crosstalk between nanocavities using a response matrix approach. As a main result we observe a simultaneous anticrossing of 3 nanophotonic resonances, which were initially split by disorder.

Acceleration of the nonlinear dynamics in p-doped indium phosphide nanoscale resonators.

We demonstrated a twofold acceleration of the fast time constant characterizing the recovery of a p-doped indium-phosphide photonic crystal all-optical gate. Time-resolved spectral analysis is compared to a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This opens the perspective for faster yet efficient nanophotonic all-optical gates.

GaInP on oxide nonlinear photonic crystal technology.

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6 dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

Measurement of the profiles of disorder-induced localized resonances in photonic crystal waveguides by local tuning.

Near the band edge of photonic crystal waveguides, localized modes appear due to disorder. We demonstrate a new method to elucidate spatial profile of the localized modes in such systems using precise local tuning. Using deconvolution with the known thermal profile, the spatial profile of a localized mode with quality factor (Q) > 105 is successfully reconstructed with a resolution of 2.5 µm.

Free-carrier-induced soliton fission unveiled by in situ measurements in nanophotonic waveguides.

Solitons are localized waves formed by a balance of focusing and defocusing effects. These nonlinear waves exist in diverse forms of matter yet exhibit similar properties including stability, periodic recurrence and particle-like trajectories. One important property is soliton fission, a process by which an energetic higher-order soliton breaks apart due to dispersive or nonlinear perturbations. Here we demonstrate through both experiment and theory that nonlinear photocarrier generation can induce soliton fission. Using near-field measurements, we directly observe the nonlinear spatial and temporal evolution of optical pulses in situ in a nanophotonic semiconductor waveguide. We develop an analytic formalism describing the free-carrier dispersion (FCD) perturbation and show the experiment exceeds the minimum threshold by an order of magnitude. We confirm these observations with a numerical nonlinear Schrödinger equation model. These results provide a fundamental explanation and physical scaling of optical pulse evolution in free-carrier media and could enable improved supercontinuum sources in gas based and integrated semiconductor waveguides.

Dispersion of coupled mode-gap cavities.

The dispersion of a coupled resonator optical waveguide made of photonic crystal mode-gap cavities is pronouncedly asymmetric. This asymmetry cannot be explained by the standard tight binding model. We show that the fundamental cause of the asymmetric dispersion is the inherent dispersive cavity mode profile; i.e., the mode wave function depends on the driving frequency, not the eigenfrequency. This occurs because the photonic crystal cavity resonances do not form a complete set. We formulate a dispersive mode coupling model that accurately describes the asymmetric dispersion without introducing any new free parameters.

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator.

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.