RESUMO
We present laser results obtained from a Dy³âº-Tb³âº co-doped LiLuF4 crystal, pumped by a blue emitting InGaN laser diode, aiming for generation of a compact 578 nm source. We exploit the yellow Dy³âº transition 4F(9/2)â6H(13/2) to generate yellow laser emission. The lifetime of the lower laser level is quenched, via energy transfer, to co-doped Tb³âº ions in the fluoride crystal. We report the growth technique, spectroscopic study, and room temperature continuous wave laser results in a hemispherical cavity at 574 nm, and with a highly reflective output coupler at 578 nm. A yellow laser at 578 nm is very relevant for metrological applications, in particular for pumping of the forbidden ¹S0-³P0 ytterbium clock transition, which is recommended as a secondary representation of the second in the international system of units.