Evidence for Topological Protection Derived from Six-Flux Composite Fermions.

The composite fermion theory opened a new chapter in understanding many-body correlations through the formation of emergent particles. The formation of two-flux and four-flux composite fermions is well established. While there are limited data linked to the formation of six-flux composite fermions, topological protection associated with them is conspicuously lacking. Here we report evidence for the formation of a quantized and gapped fractional quantum Hall state at the filling factor ν = 9/11, which we associate with the formation of six-flux composite fermions. Our result provides evidence for the most intricate composite fermion with six fluxes and expands the already diverse family of highly correlated topological phases with a new member that cannot be characterized by correlations present in other known members. Our observations pave the way towards the study of higher order correlations in the fractional quantum Hall regime.

Electron-electron interactions and the paired-to-nematic quantum phase transition in the second Landau level.

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor ν = 5/2. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure-induced paired-to-nematic transition also develops at ν = 7/2, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition.

SQUID-based current sensing noise thermometry for quantum resistors at dilution refrigerator temperatures.

We present a dc Superconducting QUantum Interference Device (SQUID)-based current amplifier with an estimated input referred noise of only 2.3 fA/Hz. Because of such a low amplifier noise, the circuit is useful for Johnson noise thermometry of quantum resistors in the kΩ range down to mK temperatures. In particular, we demonstrate that our circuit does not contribute appreciable noise to the Johnson noise of a 3.25 kΩ resistor down to 16 mK. Our circuit is a useful alternative to the commonly used High Electron Mobility Transistor-based amplifiers, but in contrast to the latter, it offers a much reduced 1/f noise. In comparison to SQUIDs interfaced with cryogenic current comparators, our circuit has similar low noise levels, but it is easier to build and to shield from magnetic pickup.

Gap reversal at filling factors 3+1/3 and 3+1/5: towards novel topological order in the fractional quantum Hall regime.

In the region of the second Landau level several theories predict fractional quantum Hall states with novel topological order. We report the opening of an energy gap at the filling factor ν=3+1/3, firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifically, we find that the relative magnitudes of the energy gaps of the ν=3+1/3 and 3+1/5 states from the upper spin branch are reversed when compared to the ν=2+1/3 and 2+1/5 counterpart states in the lower spin branch. Our findings raise the possibility that at least one of the former states is of an unusual topological order.

ν=5/2 fractional quantum Hall state in the presence of alloy disorder.

We report quantitative measurements of the impact of alloy disorder on the ν = 5/2 fractional quantum Hall state. Alloy disorder is controlled by the aluminum content x in the Al(x)Ga(1-x)As channel of a quantum well. We find that the ν = 5/2 state is suppressed with alloy scattering. To our surprise, in samples with alloy disorder the ν = 5/2 state appears at significantly reduced mobilities when compared to samples in which alloy disorder is not the dominant scattering mechanism. Our results highlight the distinct roles of the different types of disorder present in these samples, such as the short-range alloy and the long-range Coulomb disorder.

Collective nature of the reentrant integer quantum Hall states in the second Landau level.

We report an unexpected sharp peak in the temperature dependence of the magnetoresistance of the reentrant integer quantum Hall states in the second Landau level. This peak defines the onset temperature of these states. We find that in different spin branches the onset temperatures of the reentrant states scale with the Coulomb energy. This scaling provides direct evidence that Coulomb interactions play an important role in the formation of these reentrant states evincing their collective nature.

Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields.

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4 mK.

Nonconventional odd-denominator fractional quantum Hall states in the second Landau level.

We report the observation of a new fractional quantum Hall state in the second Landau level of a two-dimensional electron gas at the Landau level filling factor ν=2+6/13. We find that the model of noninteracting composite fermions can explain the magnitude of gaps of the prominent 2+1/3 and 2+2/3 states. The same model fails, however, to account for the gaps of the 2+2/5 and the newly observed 2+6/13 states suggesting that these two states are of exotic origin.

Astability and negative differential resistance of the Wigner solid.

We report spontaneous narrow band oscillations in the high field Wigner solid. These oscillations are similar to the recently seen and yet unexplained oscillations in the reentrant integer quantum Hall states. The current-voltage characteristic has a region of negative differential resistance in the current biased setup and it is hysteretic in the voltage biased setup. As a consequence of the unusual breakdown, the oscillations in the Wigner solid are of the relaxation type.

Scaling and universality of integer quantum Hall plateau-to-plateau transitions.

We have investigated the integer quantum Hall plateau-to-plateau transition in two-dimensional electrons confined to AlxGa(1-x)As-Al0.33Ga0.67As heterostructures over a broad range of Al concentration x. For x between 0.65% and 1.6%, where the dominant contribution to disorder is from the short-range alloy potential fluctuations, we observe a perfect power-law scaling in the temperature range from 30 mK to 1 K with a critical exponent kappa = 0.42 +/- 0.01.

Magnetic-field-induced insulating phases at large r s.

Exploring a two-dimensional hole system in the large r(s) regime we found a surprisingly rich phase diagram. At the highest densities, beside the nu =1/3, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely disappears. The intricate behavior of the insulating phases can be explained by a nonmonotonic melting line in the nu-r(s) phase space.

Tilt-induced localization and delocalization in the second Landau level.

We have investigated the behavior of electronic phases of the second Landau level under tilted magnetic fields. The fractional quantum Hall liquids at nu=2+1/5 and 2+4/5 and the solid phases at nu=2.30, 2.44, 2.57, and 2.70 are quickly destroyed with tilt. This behavior can be interpreted as a tilt driven localization of the 2+1/5 and 2+4/5 fractional quantum Hall liquids and a delocalization through the melting of solid phases in the top Landau level, respectively. The evolution towards the classical Hall gas of the solid phases is suggestive of antiferromagnetic ordering.

Possible observation of phase coexistence of the nu=1/3 fractional quantum hall liquid and a solid.

We have measured the magnetoresistance of a very low density and extremely high quality two-dimensional hole system. With increasing magnetic field applied perpendicularly to the sample we observe the sequence of insulating, nu=1/3 fractional quantum Hall liquid, and insulating phases. In both of the insulating phases in the vicinity of the nu=1/3 filling the magnetoresistance has an unexpected oscillatory behavior with the magnetic field. These oscillations are not of the Shubnikov-de Haas type and cannot be explained by spin effects. They are most likely the consequence of the formation of a new electronic phase which is intermediate between the correlated Hall liquid and a disorder pinned solid.

Substrate-tuned boson localization in superfluid (4)He films.

We have studied the influence of the substrate on superfluidity in thin 4He films. The inert coverage, the amount of nonsuperfluid 4He localized by the substrate, is found to scale with the well depth of the 4He-substrate interaction potential for six different substrates. Although the inert coverages for these substrates differ by more than a factor of 4, the phase boundary in the temperature-coverage plane is found to have a universal shape.

Condensation of 3He and reentrant superfluidity in submonolayer 3He- 4He mixture films on H2.

We have studied the effect of 3He on the superfluid response of submonolayer 4He films adsorbed on H2. In a limited range of 4He coverage, the introduction of 3He brings forth sequentially the normal, superfluid, and the normal phase again. This novel behavior is very likely the consequence of the condensation of the 3He atoms confined near the free surface of the superfluid 4He film into a self-bound 2D liquid.

Effect of 3He on submonolayer superfluidity.

We have studied the superfluid response of 3He-4He mixture films adsorbed onto porous gold for a wide range of 3He and 4He coverages, focusing on submonolayer superfluidity. At T = 0, 3He appears to float on top of 4He and can be viewed as a second substrate that induces its own inert layer. Depending on the 4He content, the zero-temperature superfluid mass and the superfluid onset temperature either saturate or vanish with the addition of 3He. The T = 0 superfluid-insulator phase boundary, which can be described by a simple function, is found in the 3He-4He coverage plane.