Free light-shape focusing in extreme-ultraviolet radiation with self-evolutionary photon sieves.

Extreme-ultraviolet (EUV) radiation is a promising tool, not only for probing microscopic activities but also for processing nanoscale structures and performing high-resolution imaging. In this study, we demonstrate an innovative method to generate free light-shape focusing with self-evolutionary photon sieves under a single-shot coherent EUV laser; this includes vortex focus shaping, array focusing, and structured-light shaping. The results demonstrate that self-evolutionary photon sieves, consisting of a large number of specific pinholes fabricated on a piece of Si3N4 membrane, are capable of freely regulating an EUV light field, for which high-performance focusing elements are extremely lacking, let alone free light-shape focusing. Our proposed versatile photon sieves are a key breakthrough in focusing technology in the EUV region and pave the way for high-resolution soft X-ray microscopy, spectroscopy in materials science, shorter lithography, and attosecond metrology in next-generation synchrotron radiation and free-electron lasers.

Periodic surface structure of 4H-SiC by 46.9†nm laser.

This paper presents an experimental study on the laser-induced atomic and close-to-atomic scale (ACS) structure of 4H-SiC using a capillary-discharged extreme ultraviolet (EUV) pulse of 46.9 nm wavelength. The modification mechanism at the ACS is investigated through molecular dynamics (MD) simulations. The irradiated surface is measured via scanning electron microscopy and atomic force microscopy. The possible changes in the crystalline structure are investigated using Raman spectroscopy and scanning transmission electron microscopy. The results show that the stripe-like structure is formed due to the uneven energy distribution of a beam. The laser-induced periodic surface structure at the ACS is first presented. The detected periodic surface structures with a peak-to-peak height of only 0.4 nm show periods of 190, 380, and 760 nm, which are approximately 4, 8, and 16 times the wavelength. In addition, no lattice damage is detected in the laser-affected zone. The study shows that the EUV pulse is a potential approach for the ACS manufacturing of semiconductors.

Impact of discharge currents on the intensity of 46.9 nm capillary discharge soft X-ray laser.

In this article, capillary discharge Ne-like argon 46.9nm soft X-ray laser has been firstly manifested with 4.8mm inner diameter alumina capillary for higher discharge currents. We have designed and installed capillary discharge setup for 4.8mm inner diameter alumina capillary to achieve intense 46.9nm laser. One dimensional Langragian Magneto-hydrodynamics (MHD) code was used to simulate the plasma conditions at the lasing time. The MHD code was used to perform the parametric studies of Z-pinch argon plasma, such as electron temperature, electron density and Ne-like argon ion density. The intensities of capillary discharge 46.9nm laser emitted from 4.8mm inner diameter alumina capillary were measured at 30, 36 and 40kA main discharge currents. According to the results, when the main current amplitude was increased from 30kA to 36kA and 40kA, the intensity of laser produced at optimum pressure increased up to 1.5 and 2 times, respectively. Moreover, we also studied the influence of predischarge current by increasing the predischarge current from 25 to 250A and investigated 140A as the best predischarge current for lasing. Hence, increasing the amplitude of main current using a comparatively larger inner diameter capillary is an effective way to improve intensity of capillary discharge 46.9nm soft X-ray laser. The maximum energy of 46.9nm laser was observed approximately 1.5mJ under best discharge conditions. The discussion has been made on the enhancement of 46.9nm laser intensity for higher main discharge currents and best predischarge current with experimental and simulated results. This is the first observation of 46.9nm laser with 4.8mm inner diameter alumina capillary.

Demonstration of gain saturation and double-pass amplification of a 69.8 nm laser pumped by capillary discharge.

With a 45-cm-long capillary, we obtained a saturated 69.8 nm laser with a gain coefficient of 0.4 cm-1 and a gain length product of 18. In order to increase the laser energy further, a double-pass amplification of the 69.8 nm laser was first realized with a SiC mirror without a coating. With a half cavity, the effective plasma column length and the effective gain length product can reach 84 cm and 33.7, respectively. The amplitude of a laser pulse for double-pass amplification is 9 times larger than that for single-pass amplification. In addition, the full width at half-maximum (FWHM) pulse width of a laser pulse and FWHM divergence for single-pass amplification are 1.4 ns and 0.5 mrad, respectively, which increase to 2.2 ns and 3.4 mrad for double-pass amplification.

Si and Cu ablation with a 46.9-nm laser focused by a toroidal mirror.

Si and Cu targets were ablated by a capillary-discharge 46.9-nm pumped laser beam, focused by a toroidal mirror at grazing incidence. The peak power density of the focal spot was ~2 × 107 W/cm2. Clear ablation patterns on the surfaces of Si and Cu targets were obtained, with shapes consistent with simulations. A YAG: Ce scintillator (cerium-doped YAG crystal) was used to image the variations of the laser spots. We discuss the shape and damage mechanics of the measured patterns. Melting of the target material was observed in the ablation region on Cu, but not on Si.