RESUMO
In this paper, a new methodology is presented to derive the aberration state of a lithographic projection system from wafer metrology data. For this purpose, new types of phase-shift gratings (PSGs) are introduced, with special features that give rise to a simple linear relation between the PSG image displacement and the phase aberration function of the imaging system. By using the PSGs as the top grating in a diffraction-based overlay stack, their displacement can be measured as an overlay error using a standard wafer metrology tool. In this way, the overlay error can be used as a measurand based on which the phase aberration function in the exit pupil of the lithographic system can be reconstructed. In practice, the overlay error is measured for a set of different PSG targets, after which this information serves as input to a least-squares optimization problem that, upon solving, provides estimates for the Zernike coefficients describing the aberration state of the lithographic system. In addition to a detailed method description, this paper also deals with the additional complications that arise when the method is implemented experimentally and this leads to a number of model refinements and a required calibration step. Finally, the overall performance of the method is assessed through a number of experiments in which the aberration state of the lithographic system is intentionally detuned and subsequently estimated by the new method. These experiments show a remarkably good agreement, with an error smaller than 5 mλ, among the requested aberrations, the aberrations measured by the on-tool aberration sensor, and the results of the new wafer-based method.
RESUMO
Surface-stabilized orthoconic antiferroelectric liquid crystals (OAFLCs) have a director tilt of theta = 45 degrees and are, with no field applied, negatively uniaxial with the optic axis perpendicular to the cell substrates. We demonstrate that OAFLCs can be utilized to achieve lossless phase modulation with three almost equidistant phase levels. This turns out to be true also for polymer-stabilized OAFLCs, where the polymer network increases the switching speed of the device without affecting the phase modulation appreciably.
RESUMO
We have studied the analog (V-shaped switching) mode in ferroelectric liquid crystals in reflective mode for analog phase modulation applications. We have found that several combinations of cell thicknesses and input polarization states exist for which near-lossless analog phase modulation with a range of approximately 2pi rad is obtained, and we demonstrate one such combination experimentally. Despite a slight deviation from the ideal conditions, e.g., the tilt angle was 38 degrees instead of the desired 45 degrees , virtually pure 1.6pi rad phase modulation was obtained; the measured values agree very well with our numerical simulations of the real device.
RESUMO
The analog switching mode in ferroelectric liquid crystals, sometimes referred to as 'V-shaped switching,' has, thanks to its submillisecond switching capability, attracted much interest for future fast electro-optic displays where it is to be used for amplitude modulation. We have studied this mode for analog phase-only modulation. As V-shaped switching is based on a conical motion of the index ellipsoid this presents a challenging problem since both the orientation of the slow and fast axes, as well as the amount of birefringence varies in the switching process. We show theoretically, partly by means of Poincaré sphere analysis, that it is in fact possible to obtain near-lossless analog phase modulation between zero and pi radians in an ideal V-shaped switching cell through careful tuning of the polarization state of the input light. Furthermore, we were able to demonstrate this experimentally in a fabricated cell. Although this cell deviated slightly from the ideal conditions, e.g., the tilt cone half-angle was 38 degrees instead of the desired 45 degrees , we still obtained a continuous phase modulation between zero and 0.78pi rad with less than 2% modulation of the amplitude; the measured values agree very well with our numerical simulations of the real device.
