First-Arrival Differential Counting for SPAD Array Design.

We present a novel architecture for the design of single-photon detecting arrays that captures relative intensity or timing information from a scene, rather than absolute. The proposed method for capturing relative information between pixels or groups of pixels requires very little circuitry, and thus allows for a significantly higher pixel packing factor than is possible with per-pixel TDC approaches. The inherently compressive nature of the differential measurements also reduces data throughput and lends itself to physical implementations of compressed sensing, such as Haar wavelets. We demonstrate this technique for HDR imaging and LiDAR, and describe possible future applications.

Snapshot polarimetric diffuse-specular separation.

We present a polarization-based approach to perform diffuse-specular separation from a single polarimetric image, acquired using a flexible, practical capture setup. Our key technical insight is that, unlike previous polarization-based separation methods that assume completely unpolarized diffuse reflectance, we use a more general polarimetric model that accounts for partially polarized diffuse reflections. We capture the scene with a polarimetric sensor and produce an initial analytical diffuse-specular separation that we further pass into a deep network trained to refine the separation. We demonstrate that our combination of analytical separation and deep network refinement produces state-of-the-art diffuse-specular separation, which enables image-based appearance editing of dynamic scenes and enhanced appearance estimation.

Memristive biosensors under varying humidity conditions.

We attempt to examine the potential of silicon nanowire memristors in the field of nanobiosensing. The memristive devices are crystalline Silicon (Si) Nanowires (NWs) with Nickel Silicide (NiSi) terminals. The nanowires are fabricated on a Silicon-on-Insulator (SOI) wafer by an Ebeam Lithography Technique (EBL) process that allows high resolution at the nanoscale. A Deep Reactive Ion Etching (DRIE) technique is used to define free-standing nanowires. The close alignment between Silicon (Si) and Nickel-Silicide (NiSi) terminals forms a Schottky-barrier at their junction. The memristive effect of the fabricated devices matches well with the memristor theory. An equivalent circuit reproducing the memristive effect in current-voltage (I-V) characteristics of our silicon nanowires is presented too. The memristive silicon nanowire devices are then functionalized with anti-human VEGF (Vascular Endothelial Growth Factor) antibody and I-V characteristics are examined for the nanowires prior to and after protein functionalization. The uptake of bio-molecules linked to the surface of the memristive NWs is confirmed by the increased voltage gap in the hysteresis curve. The effects of varying humidity conditions on the conductivity of bio-modified memristive silicon nanowires are deeply investigated.