Reflection sensitivity of 1.3 µm quantum dot lasers epitaxially grown on silicon.

We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 µm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 µm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

Stabilization of heterogeneous silicon lasers using Pound-Drever-Hall locking to Si3N4 ring resonators.

Recent results on heterogeneous Si/III-V lasers and ultra-high Q Si3N4 resonators are implemented in a Pound-Drever-Hall frequency stabilization system to yield narrow linewidth characteristics for a stable on-chip laser reference. The high frequency filtering is performed with Si resonant mirrors in the laser cavity. To suppress close in noise and frequency walk off, the laser is locked to an ultra-high Q Si3N4 resonator with a 30 million quality factor. The laser shows high frequency noise levels of 60 × 103 Hz2/Hz corresponding to 160 kHz linewidth, and the low frequency noise is suppressed 33 dB to 103 Hz2/Hz with the PDH system.

Unidirectional hybrid silicon ring laser with an intracavity S-bend.

We demonstrate a hybrid silicon ring laser with an internal amplifying S-bend that couples a fraction of the counter-clockwise circulating light into the the clockwise direction. The device supported single-mode, unidirectional laser oscillation at certain bias conditions. A spatial field distribution model is derived to describe the unidirectional operation. A unidirectional clockwise laser output with a suppression ratio up to 18.6 dB over the counter-clockwise mode was achieved.

Low threshold and high speed short cavity distributed feedback hybrid silicon lasers.

In this paper we investigate reducing threshold and improving the efficiency and speed of distributed feedback hybrid silicon lasers. A low threshold current of 8.8 mA was achieved for a 200 µm cavity at 20 °C. A 3 dB bandwidth of 9.5 GHz as well as 12.5 Gb/s direct modulation of DFB laser diode was achieved on the hybrid silicon platform for the first time.

Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform.

We demonstrate an array of erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss Si(3)N(4) platform. Sidewall gratings providing the lasing feedback are defined in the silicon-nitride layer using 248 nm stepper lithography, while the gain is provided by a reactive co-sputtered erbium-doped aluminum-oxide layer. We observe lasing output over a 12 nm wavelength range (1531-1543 nm) from the array of five separate lasers. Output powers of 8 µW and lasing linewidths of 501 kHz are obtained. Single-mode operation is confirmed, with side-mode suppression ratios over 35 dB for all designs.

Silicon on ultra-low-loss waveguide photonic integration platform.

We demonstrate a novel integrated silicon and ultra-low-loss Si3N4 waveguide platform. Coupling between layers is achieved with (0.4 ± 0.2) dB of loss per transition and a 20 nm 3-dB bandwidth for one tapered coupler design and with (0.8 ± 0.2) dB of loss per transition and a 100 nm 3-dB bandwidth for another. The minimum propagation loss measured in the ultra-low-loss waveguides is 1.2 dB/m in the 1590 nm wavelength regime.

Growth failure in early life: an important manifestation of Turner syndrome.

The goals of this study were to test the hypothesis that girls with Turner syndrome (TS) experience growth failure early in life and to establish model-based normative growth charts for 0- to 8-year-old American girls with TS. Full-term girls with TS who had 5 or more measurements of height obtained during their first 10 years of life prior to initiation of growth hormone, estrogen and/or androgen therapy were eligible for this study. A nonlinear mixed-effects model comprising the first two components of the infancy-childhood-puberty (ICP) model of growth was fitted to the longitudinal height measurements and compared with those of healthy American girls. Height measurements (n = 1,146) from 112 girls with TS (45,X: 57.1%; 45,X/46,XX: 12.5%; 46,X, iso(X): 4.5%, and other: 25.9%) were analyzed. Mean height SDS fell from -0.68 at birth to -1.60 at 1 year, -1.80 at 2 years and -1.95 at 3 years. When compared to controls (676 girls, 4,537 measurements), girls with TS grew more slowly due to three principal factors: a slow growth rate of the infancy component, a slow growth rate at the onset of the childhood component, and delayed onset of the childhood component. Traditional concepts of growth failure in TS should be revised. Physicians should consider the diagnosis of TS in any girl with unexplained failure to thrive or short stature, even in the first 3 years of life.