An ab initio study of the electronic structure of indium and gallium chalcogenide bilayers.

Using first principle calculations, we have studied the structural and electronic properties of two dimensional bilayers of indium and gallium chalcogenides. With density functional theory corrected for van der Waals interactions, the different modes of stacking were investigated in a systematic way, and several of them were found to compete in energy. Then, their band structures were obtained with the GW approximation and found to correspond to indirect bandgap semiconductors with a small dependency on the mode of stacking. Finally, by analysing the electron density, it appeared that GaSe-InS is a promising system for electron-hole separation.

Two-Dimensional Indium Selenides Compounds: An Ab Initio Study.

We use first-principle calculations to investigate the electronic structure of InSe and In2Se3. The interlayer binding energy is found to be in the same range as for other 2D systems, and the monolayers are found to be dynamically stable, which suggest the possibility to obtain them as isolated layers. The GW approximation including spin-orbit is used to obtain the bandgaps, which are in the range relevant for application in electronics. Also, it is shown that an electric field perpendicular to the layers can induce a semiconductor to metal transition in this family of compounds.

Second-order Raman scattering in CuO.

Polarized second-order Raman scattering spectra of CuO single crystals are reported. It is shown that for some scattering geometries the second-order processes dominate the inelastic light scattering spectra. Group-theoretical symmetry analysis of the selection rules for the first- and second-order scattering processes is performed and phonon dispersion relations are calculated within density functional theory. The main spectral features of the two-phonon spectra are assigned to overtones of the vibrational branches at various special points across the Brillouin zone.